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A nonlinear resistive switching behaviors of Ni/HfO2/TiN memory structures for self-rectifying resistive switching memory

  • This work reports forming free/self-rectifying resistive switching characteristics and dependency of the top electrode (TE) of a crystalline HfO2-based resistive switching memory device. In the memory cells, nonlinear bipolar resistive switching characteristics, i.e., an asymmetric current-voltage curve like the Schottky diode, was observed. In addition, the device exhibits resistive switching behaviors without forming process, which makes it possible to switch the resistance state under ultra-low current levels of <10 nA. In addition, compared to the resistive switching of the proposed resistive switching memory devices with different TEs, the VSET was decreased when using TE with lower work function, and the height read margin was obtained in the sample with the Ni TE, covering over 56 × 56 arrays. Consequently, these results indicate that the interface control resistive switching properties in memory structures having the Schottky junction warrant the realization of selector-free resistive switching memory cells in a high-densityThis work reports forming free/self-rectifying resistive switching characteristics and dependency of the top electrode (TE) of a crystalline HfO2-based resistive switching memory device. In the memory cells, nonlinear bipolar resistive switching characteristics, i.e., an asymmetric current-voltage curve like the Schottky diode, was observed. In addition, the device exhibits resistive switching behaviors without forming process, which makes it possible to switch the resistance state under ultra-low current levels of <10 nA. In addition, compared to the resistive switching of the proposed resistive switching memory devices with different TEs, the VSET was decreased when using TE with lower work function, and the height read margin was obtained in the sample with the Ni TE, covering over 56 × 56 arrays. Consequently, these results indicate that the interface control resistive switching properties in memory structures having the Schottky junction warrant the realization of selector-free resistive switching memory cells in a high-density crossbar array.show moreshow less

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Metadaten
Author: Min Ju Yun, Doowon Lee, Sungho Kim, Christian WengerORCiD, Hee-Dong Kim
DOI:https://doi.org/10.1016/j.matchar.2021.111578
ISSN:1044-5803
Title of the source (English):Materials Characterization
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2021
Tag:HfO2; RRAM; resistive switching
Volume/Year:182
Number of pages:7
Article number:111578
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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