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Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology

  • In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2 at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 % and RMS of 1.413 nm for 150 nm thick TiN layers.

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Metadaten
Author: Christian Mai, Steffen Marschmeyer, Anna Peczek, Aleksandra Kroh, Josmy Jose, Sebastian Reiter, Inga Anita FischerORCiD, Christian WengerORCiD, Andreas Mai
DOI:https://doi.org/10.1149/10904.0035ecst
ISSN:1938-5862
Title of the source (English):ECS Transactions
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2022
Tag:germanium detector; nanohole array; plasmonics
Volume/Year:109
Issue number:4
First Page:35
Last Page:46
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Experimentalphysik und funktionale Materialien
Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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