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Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain

  • A graphene-based three terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field effect transistors. In this study, we fabricated and analyzed a novel graphene-based transistor, which resembles the structure of the barristor but uses a different operating condition. This new device, termed graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate rather than a metal−insulator gate structure to modulate the device currents. The key feature of the device is the two graphene-semiconductor Schottky barriers with different heights that are controlled simultaneously by the gate voltage. Due to the asymmetry of the barriers, the drain current exceeds the gate current by several orders of magnitude. Thus, the GABT can be considered an amplifier with an alterable current gain. In this work, a silicon−graphene−germanium GABT with an ultra-high current gain (ID/IG up to 8 × 106) was fabricated, and the device functionality wasA graphene-based three terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field effect transistors. In this study, we fabricated and analyzed a novel graphene-based transistor, which resembles the structure of the barristor but uses a different operating condition. This new device, termed graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate rather than a metal−insulator gate structure to modulate the device currents. The key feature of the device is the two graphene-semiconductor Schottky barriers with different heights that are controlled simultaneously by the gate voltage. Due to the asymmetry of the barriers, the drain current exceeds the gate current by several orders of magnitude. Thus, the GABT can be considered an amplifier with an alterable current gain. In this work, a silicon−graphene−germanium GABT with an ultra-high current gain (ID/IG up to 8 × 106) was fabricated, and the device functionality was demonstrated. Additionally, a capacitance model is applied to predict the theoretical device performance resulting in an on−off ratio above 106, a swing of 87 mV/dec, and a drivecurrent of about 1 × 106 A/cm2.show moreshow less

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Metadaten
Author: Carsten Strobel, Carlos Alvarado ChavarinORCiD, Karola Richter, Martin Knaut, Johanna Reif, Sandra Völkel, Andreas Jahn, Matthias Albert, Christian WengerORCiD, Robert Kirchner, Johann Wolfgang Bartha, Thomas Mikolajick
DOI:https://doi.org/10.1021/acsami.2c10634
ISSN:1944-8244
ISSN:1944-8252
Title of the source (English):ACS Applied Materials & Interfaces
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2022
Tag:Graphene; Transistor
Volume/Year:14
Issue number:34
First Page:39249
Last Page:39254
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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