• search hit 2 of 7
Back to Result List

High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density

  • Hot electron transistors (HETs) represent an exciting frontier in semiconductor technology, holding the promise of high-speed and high-frequency electronics. With the exploration of two-dimensional materials such as graphene and new device architectures, HETs are poised to revolutionize the landscape of modern electronics. This study highlights a novel HET structure with a record output current density of 800 A/cm² and a high current gain α, fabricated using a scalable fabrication approach. The HET structure comprises two-dimensional hexagonal boron nitride (hBN) and graphene layers wet transferred to a germanium substrate. The combination of these materials results in exceptional performance, particularly in terms of the highly saturated output current density. The scalable fabrication scheme used to produce the HET opens up opportunities for large-scale manufacturing. This breakthrough in HET technology holds promise for advanced electronic applications, offering high current capabilities in a practical and manufacturable device.

Export metadata

Additional Services

Search Google Scholar
Metadaten
Author: Carsten Strobel, Carlos Alvarado ChavarinORCiD, Martin Knaut, Sandra Völkel, Matthias Albert, Andre Hiess, Benjamin Max, Christian WengerORCiD, Robert Kirchner, Thomas Mikolajick
DOI:https://doi.org/10.1002/aelm.202300624
ISSN:2199-160X
Title of the source (English):Advanced Electronic Materials
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2024
Tag:Graphene; Transistor
Volume/Year:10
Issue number:2
Article number:2300624
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
Einverstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.