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Vertical Graphene-Based Transistors for Power Electronics, Optoelectronics and Radio-Frequency Applications

  • The combination of two-dimensional materials, such as graphene, with established thin films offers great opportunities for enabling next-generation vertical transistors for various applications. This paper gives a brief overview about different vertical transistor concepts using twodimensional materials proposed so far, e.g. the hot electron transistor and the Barristor. With the arrival of twodimensional materials, the hot electron transistor also experienced a revival with predicted cut-off frequencies in the THz range. The Barristor overcomes the weak current saturation of lateral graphene field-effect transistors and high on-off ratios up to 107 were demonstrated, which are suitable parameters for logic applications. By combining a semiconductor-graphene-semiconductor design of the simplest hot electron transistor with the Barristor operating principle a new device, called graphene adjustable-barriers transistor, can be realized. This new device concept provides the potential for RF, power electronics, and optoelectronicThe combination of two-dimensional materials, such as graphene, with established thin films offers great opportunities for enabling next-generation vertical transistors for various applications. This paper gives a brief overview about different vertical transistor concepts using twodimensional materials proposed so far, e.g. the hot electron transistor and the Barristor. With the arrival of twodimensional materials, the hot electron transistor also experienced a revival with predicted cut-off frequencies in the THz range. The Barristor overcomes the weak current saturation of lateral graphene field-effect transistors and high on-off ratios up to 107 were demonstrated, which are suitable parameters for logic applications. By combining a semiconductor-graphene-semiconductor design of the simplest hot electron transistor with the Barristor operating principle a new device, called graphene adjustable-barriers transistor, can be realized. This new device concept provides the potential for RF, power electronics, and optoelectronic applications.show moreshow less

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Metadaten
Author: Carsten Strobel, Carlos Alvarado ChavarinORCiD, Christian WengerORCiD, Matthias Albert, Thomas Mikolajick
DOI:https://doi.org/10.1109/NMDC57951.2023.10344102
ISBN:979-8-3503-3546-0
ISBN:979-8-3503-3547-7
ISSN:2473-0718
Title of the source (English):IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023
Publisher:Institute of Electrical and Electronics Engineers (IEEE)
Document Type:Conference publication peer-reviewed
Language:English
Year of publication:2023
Tag:Graphene
First Page:196
Last Page:201
Way of publication:Open Access
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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