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The Interaction of Pr2O3 with 4H-SiC(0001)surface

  • Praseodymium oxide (Pr2O3) as a hetero-oxide on SiC(0001) represents a promising semiconductor / high-K dielectric material combination. We prepared thin films (<3 nm) of Pr2O3 on 4H-SiC(0001) surfaces by a wet chemical process involving aqueous solutions of Pr(NO3)3. Synchrotron radiation photoelectron spectroscopy (SR-PES) is used to study the chemical composition of these films after deposition and annealing in 300-900 %B0C range. The Si2p and C1s core level emissions are analysed in detail and reveal that praseodymium-silicate is formed at the interface. Our data are compared to corresponding studies of the Pr2O3 interaction with Si(001) surfaces.

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Metadaten
Author: Andriy Goryachko, Ioanna Paloumpa, Guido Beuckert, Yevgen Burkov, Dieter SchmeißerORCiD
ISSN:1610-1634
Title of the source (English):Physica status solidi / C
Document Type:Article
Language:English
Year of publication:2004
Volume/Year:1
Issue number:2
First Page:265
Last Page:268
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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