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Characterization of AlSiCu/TiN/p-Si Schottky Contacts with Nanophotonic Structures for Near-infrared Photodetectors

  • Schottky photodetectors based on internal photoemission have the potential of an adjustable detection range in the near-infrared range and Si compatible technology integration. The external quantum efficiency of Schottky photodetectors can be improved using nanophotonic structures, which enhance the absorption of the device. However, the electrical properties of Schottky photodetectors deviate under an altered metal-semiconductor interface topography. We characterize a common layer system for metal contacts consisting of a TiN interstitial layer between the p-Si wafer and the AlSiCu metallization. By varying the thickness of the TiN we discuss how homogeneity of the sputtered layers influence device properties with different interface topographies. Through electrical wafer-level characterization, the characteristics of the Schottky contact are evaluated and compared to the ideal physical modelling.

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Metadaten
Author: Hanying Wen, Lion Augel, Wenjuan Wang, Jens Knobbe
URL:https://ieeexplore.ieee.org/document/10168510
DOI:https://doi.org/10.1109/ISSE57496.2023.10168510
ISBN:979-8-3503-3485-2
ISBN:979-8-3503-3484-5
Title of the source (English):2023 46th International Spring Seminar on Electronics Technology (ISSE) : 10-14 May 2023 : conference location: Timișoara, Romania
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:Conference publication peer-reviewed
Language:English
Year of publication:2023
First Page:1
Last Page:5
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Mikro- und Nanosysteme
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