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A revised model of silicon oxidation during the dissolution of silicon in HF/HNO₃ mixtures

  • The stoichiometry of wet chemical etching of silicon in concentrated HF/HNO₃ mixtures was investigated. The formation of nitrogen species enriched in the etching mixture and their reactivity during the etching process was studied. The main focus of the investigations was the comprehensive quantification of the gaseous reaction products using mass spectrometry. Whereas previously it could only be speculated that nitrogen was a product, its formation was detected for the first time. The formation of hydrogen, N₂, N₂O and NH₄⁺ showed a dependence on the etching bath volume used, which indicates the formation of nitrogen compounds by side reactions. Simultaneously, the ratio of the nitrogen oxides, NO and NO₂, formed decreases with increasing etching bath volume, while nitric acid consumption increases, so that the formation of NO₂ could also be identified as a side reaction. Based on the stoichiometries obtained, a new reaction scheme for the reduction of nitric acid during etching in HF/HNO₃ mixtures and an electron balance for theThe stoichiometry of wet chemical etching of silicon in concentrated HF/HNO₃ mixtures was investigated. The formation of nitrogen species enriched in the etching mixture and their reactivity during the etching process was studied. The main focus of the investigations was the comprehensive quantification of the gaseous reaction products using mass spectrometry. Whereas previously it could only be speculated that nitrogen was a product, its formation was detected for the first time. The formation of hydrogen, N₂, N₂O and NH₄⁺ showed a dependence on the etching bath volume used, which indicates the formation of nitrogen compounds by side reactions. Simultaneously, the ratio of the nitrogen oxides, NO and NO₂, formed decreases with increasing etching bath volume, while nitric acid consumption increases, so that the formation of NO₂ could also be identified as a side reaction. Based on the stoichiometries obtained, a new reaction scheme for the reduction of nitric acid during etching in HF/HNO₃ mixtures and an electron balance for the oxidation of silicon is presented.show moreshow less

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Metadaten
Author: Anja RietigORCiD, Thomas LangnerORCiD, Jörg AckerORCiDGND
URL:https://pubs.rsc.org/en/content/articlelanding/2019/CP/C9CP04429A#!divAbstract
DOI:https://doi.org/10.1039/c9cp04429a
ISSN:1463-9076
Title of the source (English):Physical chemistry, chemical physics
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2019
Tag:Raman spectroscopy; etching; hydrogen; kinetics; mass spectrometry; mechanism; nitrogen oxide; silicon
Volume/Year:21
First Page:22002
Last Page:22013
Faculty/Chair:Fakultät 2 Umwelt und Naturwissenschaften / FG Physikalische Chemie
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