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Measurement of the temperature dependence of lattice deformations in silicon using Raman microscopy

  • The effect of heating and cooling in the range of 25–900 °C on the lattice deformations of diamond wire-sawn polycrystalline and scratched monocrystalline silicon surfaces was studied in detail using Raman microscopy. Mechanically treated silicon surfaces contain tensile or compressive strained silicon with varying deformation strength and areas with high-pressure silicon phases and amorphous silicon. It is shown that compressive deformed silicon relaxes after heating the sample to 600 °C, while tensile deformed silicon only relaxes after multiple heating and cooling cycles. Raman measurements during the heating and after the cooling phases reveal the individual thermal expansion and relaxation behavior of the deformed silicon states. Compressive deformed silicon relaxes during the heating phase, while tensile deformed silicon relaxes during the cooling phase. It is, therefore, possible to separately relax certain deformation states using thermal annealing without changing the topography of the surface.

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Metadaten
Author: Steven HeroldORCiD, Jörg AckerORCiDGND
URL:https://aip.scitation.org/doi/10.1063/1.5090476
DOI:https://doi.org/10.1063/1.5090476
ISSN:1089-7550
Title of the source (English):Journal of Applied Physics
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2019
Tag:Raman spectroscopy; crystallization; mechanical stress; relaxation; silicon; solar cell; thermal treatment
Volume/Year:126
Number of pages:7
Article number:035103
Faculty/Chair:Fakultät 2 Umwelt und Naturwissenschaften / FG Physikalische Chemie
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