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Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur

  • We apply soft x-ray emission spectroscopy (XES) to measure the electronic structure of crystalline silicon supersaturated with sulfur (up to 0.7 at. %), a candidate intermediate-band solar cell material. Si L2,3 emission features are observed above the conventional Si valence band maximum, with intensity scaling linearly with S concentration. The lineshape of the S-induced features change across the insulator-to-metal transition, indicating a significant modification of the local electronic structure concurrent with the change in macroscopic electronic behavior. The relationship between the Si L2,3 XES spectral features and the anomalously high sub-band gap infrared absorption is discussed.

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Author: J. T. Sullivan, Regan G. Wilks, M. T. Winkler, Lothar Weinhardt, D. Recht, A. J. Said, B. K. Newman, Y. Zhang, Monika Blum, S. Krause, Wan Li Yang, Clemens Heske, M. J. Aziz, Marcus Bär, T. Buonassisi
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2011
Tag:black silicon; electronic surface structure; solar cells; x-ray emission spectroscopy
Quelle aus UBICO:Applied physics letters 99(2011)142102, 0003-6951
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / JP Photovoltaik
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / JP Photovoltaik
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