Enhanced Electrical Properties of Optimized Vertical Graphene-Base Hot Electron Transistors

  • The arrival of high-mobility two-dimensional materials like graphene leads to the renaissance of former vertical semiconductor–metal–semiconductor (SMS) hot electron transistors. Because of the monolayer thickness of graphene, improved SMS transistors with a semimetallic graphene-base electrode are now feasible for high-frequency applications. In this study we report about a device that consists of amorphous silicon, graphene, and crystalline silicon. For the first time, this device is fabricated by a four-mask lithography process which leads to significant improvements in the device performance. A strongly increased common-emitter current gain of 2% could be achieved while the on–off ratio improved to 1.6 × 105, which is already higher than predicted theoretically. This could be mainly attributed to better interface characteristics and decreased lateral dimensions of the devices. A cutoff frequency of approximately 26 MHz could be forecasted based on the DC measurements of the device.

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Author: Carsten Strobel, Carlos Alvarado ChavarinORCiD, Sandra Völkel, Andreas Jahn, Andre Hiess, Martin Knaut, Matthias Albert, Christian WengerORCiD, Olaff Steinke, Ulf Stephan, Sören Röhlecke, Thomas Mikolajick
DOI:https://doi.org/10.1021/acsaelm.2c01725
ISSN:2637-6113
Title of the source (English):ACS Applied Electronic Materials
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2023
Tag:Graphene; Transistor
Volume/Year:5
Issue number:3
First Page:1670
Last Page:1675
Fundername (not EU):DFG
Project number (not EU):WE 3594/5-2
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Halbleitermaterialien
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