TY - CHAP A1 - Rietig, Anja A1 - Acker, Jörg T1 - Ressourcensicherung durch Recycling von Sekundärrohstoffen T2 - Systemwissen für die vernetzte Energie- und Mobilitätswende KW - Lithiumbatterie KW - Funktionelles Recycling KW - Nickel-Mangan-Cobalt-Oxid KW - NMC KW - Raman-Spektroskopie KW - Laugung Y1 - 2019 SN - 978-3-9816861-7-3 SP - 170 EP - 181 PB - Vereinigung für Betriebliche Bildungsforschung e.V. CY - Berlin ET - 1. Auflage ER - TY - GEN A1 - Rietig, Anja A1 - Acker, Jörg T1 - Kinetic studies on acidic wet chemical etching of silicon in binary and ternary mixtures of HF, HNO3 and H2SiF6 T2 - Physical Chemistry Chemical Physics Y1 - 2023 U6 - https://doi.org/10.1039/d3cp03188h SN - 1463-9084 SN - 1463-9076 VL - 25 IS - 38 SP - 26245 EP - 26257 ER - TY - CHAP A1 - Hünger, Klaus-Jürgen A1 - Acker, Jörg A1 - Danneberg, Matti A1 - Herold, Steven T1 - Quantification of stress states in quartzite surfaces by using RAMAN spectroscopy T2 - 27th Annual Conference of the German Crystallographic Society / Zeitschrift für Kristallographie. Supplement Y1 - 2019 SN - 978-3-11-065403-5 SN - 0930-486X VL - 39 SP - S. 122 PB - De Gruyter CY - Berlin ER - TY - CHAP A1 - Rietig, Anja A1 - Acker, Jörg T1 - Ressourcensicherung durch Recycling von Sekundärrohstoffen T2 - Systemwissen für die vernetzte Energie- und Mobilitätswende KW - Recycling KW - Lithium-Ionen-Batterien KW - Elektroschrott KW - Edelmetalle Y1 - 2022 UR - https://www.ibbf.berlin/assets/images/Dokumente/220627_IBBF_Kompendium_2022_WEB_final%20(1).pdf SN - 978-3-9816861-8-0 SP - 141 EP - 152 PB - Vereinigung für Betriebliche Bildungsforschung e.V. CY - Berlin ET - 2. Auflage ER - TY - GEN A1 - Rietig, Anja A1 - Grafe, Hans-Joachim A1 - Acker, Jörg T1 - Understanding the Reasons for Erroneous Determinations of Boron in Silicon following Wet Chemical Digestion in HF/HNO3 T2 - Proceedings of the Silicon for the Chemical & Solar Industry XVI KW - boron KW - silicon KW - species KW - trace element Y1 - 2022 UR - https://ssrn.com/abstract=4123058 SN - 978-82-692919-0-2 U6 - https://doi.org/10.2139/ssrn.4123058 ER - TY - GEN A1 - Rietig, Anja A1 - Langner, Thomas A1 - Acker, Jörg T1 - About determining reliable etching rates and the role of temperature in kinetic experiments on acidic wet chemical etching of silicon T2 - Physical Chemistry Chemical Physics Y1 - 2023 UR - https://pubs.rsc.org/en/content/articlelanding/2023/cp/d2cp05837e U6 - https://doi.org/10.1039/D2CP05837E SN - 1463-9084 VL - 25 IS - 16 SP - 11387 EP - 11397 ER - TY - GEN A1 - Rietig, Anja A1 - Langner, Thomas A1 - Acker, Jörg T1 - Comprehensive stoichiometric studies on the reaction of silicon in HF/HNO3 and HF/HNO3/H2SiF6 mixtures T2 - Physical chemistry, chemical physics KW - silicon KW - etching KW - stoichiometry KW - hydrogen KW - nitrogen oxides KW - mechanism Y1 - 2022 UR - https://pubs.rsc.org/en/content/articlelanding/2022/cp/d1cp05418j U6 - https://doi.org/10.1039/d1cp05418j SN - 1463-9076 VL - 24 IS - 5 SP - 3094 EP - 3108 ER - TY - CHAP A1 - Herold, Steven A1 - Acker, Jörg ED - Scheschkewitz, David ED - Kickelbick, Guido T1 - The influence of lattice deformations on the etch rates of potassium hydroxide on silicon T2 - 9th European Silicon Days, 9-12 September 2018, Saarbrücken, Germany, Book of abstracts N2 - One of the most common methods to analyse silicon materials is Raman-spectroscopy.[1] More recently there is a focus in the analysis of lattice deformations during sample preparations.[2] These deformations not only increase the chance of crack formation but also increases the chemical reactivity of the silicon towards etch processes or oxidation processes.[3] In this contribution, we will present our latest results on the influence of lattice deformations induced by scratches and saw damage on the etch rate of potassium hydroxide. The lattice deformation will be measured using Raman-microscopy and correlated with the height difference measured with confocal microscopy. It will be shown that the etch rate strongly depends on the lattice deformation and that the etch rate will increase by up to the factor 10 in areas with tensile deformation. KW - silicon KW - etching KW - Raman spectroscopy KW - lattice strain KW - saw damage KW - confocal microscopy Y1 - 2018 SP - S. 198 PB - Universität des Saarlandes CY - Saarbrücken ER - TY - GEN A1 - Acker, Jörg A1 - Sieber, Tim A1 - Langner, Thomas A1 - Herold, Steven ED - Andresen, Birger ED - Nygaard, Lars ED - Rong, Harry ED - Tangstad, Merete ED - Tveit, Halvard ED - Page, Ingrid Gamst T1 - The impact of lattice strain on the reactivity of silicon T2 - Silicon for the Chemical and Solar Industry XIV N2 - The present study is focused on the question of how lattice strain mechanically introduced into silicon alters the chemical reactivity of the silicon atoms that are affected by the strain field on a microscopic length scale. The magnitude and local distribution of lattice strain are extracted from confocal Raman microscopy measurements. The reactivity of Si is expressed by the etch rate of Si after treatment with HF–HNO3–H2SiF6 mixtures. Then, the local etch rate is calculated from the local etch depth as determined by confocal microscopy. It has been found that tensile strain leads to the highest enhancement of the etch rate, followed by a compressive strain increase in the etch rate. KW - silicon KW - etching KW - Raman spectroscopy KW - lattice strain KW - stress KW - mechanical activation KW - mechanochemistry KW - confocal microscopy Y1 - 2018 SP - 11 EP - 20 PB - The Norwegian University of Science and Technology CY - Trondheim ER - TY - GEN A1 - Rietig, Anja A1 - Langner, Thomas A1 - Acker, Jörg ED - Andresen, Birger ED - Rong, Harry ED - Tangstad, Merete ED - Tveit, Halvard ED - Page, Ingrid T1 - Advanced insights into the stoichiometry and kinetics of the reaction of silicon in HF/HNO3 and HF/HNO3/H2SiF6 mixtures T2 - Silicon for the Chemical and Solar Industry XV N2 - The stoichiometry and kinetics of wet chemical etching of silicon in HF/HNO3 and HF/HNO3/H2SiF6 mixtures was investigated. The side reactions and main reaction pathways were identified by quantifying all reaction products. The relationship between the concentration of undissociated HNO3 and the consumption of HNO3, as well as the formation of H2 as a function of the mixing ratios were found by varying the etching mixture composition systematically. Based on the etching rates determined, kinetic models for the reaction- and diffusion-controlled reaction mechanism are presented as well as the interrelation between the etchant composition and the transition between reaction- and diffusion-controlled etching. KW - silicon KW - etching KW - Raman KW - etch rate KW - mass spectrometry KW - hydrogen KW - nitrous gases Y1 - 2020 SN - 978-82-997357-9-7 SP - 145 EP - 159 PB - The Norwegian University of Science and Technology CY - Trondheim ER -