TY - PAT A1 - Augel, Lion A1 - Knobbe, Jens T1 - Vorrichtung und Verfahren zur Absorption von elektromagnetischer Strahlung, System zur Verwendung in einem Bildsensor, sowie Verfahren zur Herstellung einer Vorrichtung zur Absorption von elektromagnetischer Strahlung Y1 - 2023 UR - https://register.dpma.de/DPMAregister/pat/register?AKZ=1020212137474 ER - TY - PAT A1 - Augel, Lion A1 - Knobbe, Jens T1 - Vorrichtung, Verfahren und System zur Absorption von elektromagnetischer Strahlung, sowie Verfahren zur Herstellung einer Vorrichtung zur Absorption von elektromagnetischer Strahlung Y1 - 2023 UR - https://register.dpma.de/DPMAregister/pat/register?AKZ=1020212137466 ER - TY - GEN A1 - Jongmanns, Marcel T1 - Implementation of a hand gesture recognition using ultrasound measurements on a NVIDIA Jetson platform with AI-based evaluation Y1 - 2023 SN - 978-3-8007-6204-0 SN - 978-3-8007-6203-3 N1 - Poster, Tagungsband MikroSystemTechnik Kongress 2023, Dresden, 23. - 25. Oktober 2023 PB - Berlin CY - VDE Verlag ER - TY - GEN A1 - Wen, Hanying A1 - Augel, Lion A1 - Wang, Wenjuan A1 - Knobbe, Jens T1 - Characterization of AlSiCu/TiN/p-Si Schottky Contacts with Nanophotonic Structures for Near-infrared Photodetectors T2 - 2023 46th International Spring Seminar on Electronics Technology (ISSE) : 10-14 May 2023 : conference location: Timișoara, Romania N2 - Schottky photodetectors based on internal photoemission have the potential of an adjustable detection range in the near-infrared range and Si compatible technology integration. The external quantum efficiency of Schottky photodetectors can be improved using nanophotonic structures, which enhance the absorption of the device. However, the electrical properties of Schottky photodetectors deviate under an altered metal-semiconductor interface topography. We characterize a common layer system for metal contacts consisting of a TiN interstitial layer between the p-Si wafer and the AlSiCu metallization. By varying the thickness of the TiN we discuss how homogeneity of the sputtered layers influence device properties with different interface topographies. Through electrical wafer-level characterization, the characteristics of the Schottky contact are evaluated and compared to the ideal physical modelling. Y1 - 2023 UR - https://ieeexplore.ieee.org/document/10168510 SN - 979-8-3503-3485-2 SN - 979-8-3503-3484-5 U6 - https://doi.org/10.1109/ISSE57496.2023.10168510 SP - 1 EP - 5 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Augel, Lion A1 - Wen, Hanying A1 - Knobbe, Jens T1 - TiN-Si Schottky Diodes for SWIR Detection T2 - Tagungsband MikroSystemTechnik Kongress 2023, Dresden, 23. - 25. Oktober 2023 Y1 - 2023 SN - 978-3-8007-6204-0 SN - 978-3-8007-6203-3 SP - 30 EP - 34 PB - VDE Verlag CY - Berlin ER - TY - PAT A1 - Conrad, Holger A1 - Gaudet, Matthieu A1 - Schenk, Harald A1 - Uhlig, Sebastian T1 - Micromechanical devices with mechanical actuators Y1 - 2023 UR - https://www.freepatentsonline.com/11639718.html ER - TY - GEN A1 - Wall, Franziska A1 - Schenk, Hermann A. G. A1 - Melnikov, Anton A1 - Kaiser, Bert A1 - Schenk, Harald T1 - A non-destructive electro-acoustic method to characterize the pull-in voltage of electrostatic actuators T2 - Nonlinear Dynamics N2 - For electrostatic actuators, the pull-in marks an upper limit for the operation range. Once reached, the electrodes come into contact and are shorted without further protection. A non-destructive measurement technique to predict this failure mode is of high interest to allow, e.g. fabrication monitoring or reliability studies. To this end, we develop a surprisingly simple nonlinear lumped parameter model (LPM) for a rather complex electrostatic actuator, designed for an in-ear loudspeaker application. It turns out that a single degree-of-freedom model with only one parameter is sufficient. Our key approach is to experimentally determine this free model parameter by analysing harmonic distortions at low frequencies. Harmonic distortions are a very sensitive tool for nonlinearities. Our method is suggested by simulations with a 2D stationary finite element method (FEM), demonstrating how the analysis of harmonic distortions for voltages far below the pull-in can predict not only the DC pull-in but also the quasi-static AC pull-in voltages at different working points. The distortion analysis of electrostatic actuator ensembles therefore seems a viable route for their non-destructive characterization in the nonlinear domain. KW - Pull-in KW - Electrostatic actuator KW - Microspeaker KW - Harmonic distortions Y1 - 2023 UR - https://link.springer.com/article/10.1007/s11071-023-08811-1 U6 - https://doi.org/10.1007/s11071-023-08811-1 SN - 1573-269X SN - 0924-090X VL - 111 IS - 19 SP - 17809 EP - 17818 ER - TY - GEN A1 - Villasmunta, Francesco A1 - Steglich, Patrick A1 - Heinrich, Friedhelm A1 - Villringer, Claus A1 - Mai, Andreas A1 - Schrader, Sigurd A1 - Schenk, Harald T1 - Optical Through-Silicon Waveguides for 3D-Chip-Interconnections N2 - Integrated optical interconnections in silicon chips have the potential to replace electrical interconnects between integrated circuits thanks to their high bandwidth and low energy communication promises. A silicon dielectric waveguide can be etched through the full thickness of a silicon substrate providing a monolithically integrated solution for 2.5D and 3D photonic architectures. The optical through-silicon waveguide design presented here is based on Finite Difference Time Domain simulations, while the fabrication takes advantage of the innovative plasma cryo-etching process that provides smooth sidewalls and tapering angle tunability. Such structures can provide effective mode size conversion, therefore favoring the coupling of external light sources to photonic integrated circuits and the stacking of multiple optically interconnected dies. KW - Integrated Optics KW - Micro Optics KW - Optical Information Transmission Y1 - 2023 UR - https://www.dgao-proceedings.de/abstract/abstract_only.php?id=2920 ER - TY - GEN A1 - Ruffert, Christine A1 - Schenk, Hermann A. G. A1 - Kaiser, Bert A1 - Ehrig, Lutz A1 - Monsalve Guaracao, Jorge Mario A1 - Langa, Sergiu A1 - Wall, Franziska A1 - Melnikov, Anton A1 - Stolz, Michael A1 - Morsk, Andreas A1 - Schuffenhauer, David A1 - Conrad, Holger A1 - Schenk, Harald T1 - Elektrostatischer Gegentakt NED-Aktor für Im-Ohr-µLautsprecher Y1 - 2023 UR - https://publica.fraunhofer.de/entities/publication/af8b72ee-2b53-4478-a964-a9dfb17ac3ad/details U6 - https://doi.org/10.24406/publica-2553 N1 - Im Rahmen der Mittelstandskonferenz 2023 in Berlin präsentiert. ER - TY - GEN A1 - Monsalve, Jorge M. A1 - Kaiser, Bert A1 - Schenk, Harald T1 - Design of Micromachined Ultrasonic Transducers for Variability with the Sample-Average Approximation Method T2 - Tagungsband MikroSystemTechnik Kongress 2023, Dresden, 23. - 25. Oktober 2023 Y1 - 2023 SN - 978-3-8007-6204-0 SN - 978-3-8007-6203-3 SP - S. 639 PB - VDE Verlag CY - Berlin ER -