TY - GEN A1 - Taoka, Noriyuki A1 - Capellini, Giovanni A1 - Driesch, Nils von den A1 - Buca, Dan A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Klesse, Wolfgang Matthias A1 - Montanari, Michele A1 - Schröder, Thomas T1 - Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer T2 - Applied Physics Express Y1 - 2016 U6 - https://doi.org/10.7567/APEX.9.031201 SN - 1882-0786 SN - 1882-0778 VL - 9 IS - 3 SP - 031201 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Schubert, Markus Andreas A1 - Niermann, Tore A1 - Zaumseil, Peter A1 - Katzer, Jens A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Xie, Ya-Hong A1 - Känel, Hans von A1 - Schröder, Thomas T1 - Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers T2 - Scientific Reports Y1 - 2016 U6 - https://doi.org/10.1038/srep22709 SN - 2045-2322 VL - 6 SP - 22709 ER - TY - GEN A1 - Niu, Gang A1 - Calka, Pauline A1 - Walczyk, Christian A1 - Guha, Subhajit A1 - Fraschke, Mirko A1 - Fröhlich, K. A1 - Hamoumou, Philippe A1 - Gautier, Brice A1 - Alff, Lambert A1 - Schröder, Thomas T1 - Geometric conductive filament confinement by nanotips for resistive switching of HfO₂-RAM devices with high performance T2 - Scientific Reports Y1 - 2016 SN - 2045-2322 VL - 6 IS - 25757 ER - TY - GEN A1 - Ewert, Moritz A1 - Schmidt, Thomas A1 - Flege, Jan Ingo A1 - Heidmann, Inga A1 - Grzela, Tomasz A1 - Klesse, Wolfgang Matthias A1 - Förster, M. A1 - Aballe, Lucia A1 - Schröder, Thomas T1 - Morphology and Chemical Composition of Co Germanide islands on Ge(001): in-situ nanoscale insights into contact formation for Ge-based device technology T2 - Nanotechnology Y1 - 2016 SN - 1361-6528 SN - 0957-4484 VL - 27 IS - 32 SP - 325705 ER - TY - GEN A1 - Yang, Sang Mo A1 - Mazet, Lucie A1 - Okatan, M. Baris A1 - Jesse, Stephen A1 - Niu, Gang A1 - Schroeder, Thomas A1 - Schamm-Chardon, Sylvie A1 - Dubourdieu, Catherine A1 - Baddorf, Arthur P. A1 - Kalinin, Sergei V. T1 - Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopy T2 - Applied Physics Letters Y1 - 2016 U6 - https://doi.org/10.1063/1.4954276 SN - 1077-3118 VL - 108 IS - 25 SP - 252902 ER - TY - GEN A1 - Engelhard, M. A1 - Klemp, C. A1 - Behringer, M. A1 - Rudolph, A. A1 - Skibitzki, Oliver A1 - Zaumseil, Peter A1 - Schröder, Thomas T1 - Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth T2 - Journal of Applied Physics Y1 - 2016 U6 - https://doi.org/10.1063/1.4955333 SN - 1089-7550 SN - 0021-8979 VL - 120 IS - 4 SP - 045301 ER - TY - GEN A1 - Dabrowski, Jarek Marek A1 - Lippert, Gunther A1 - Avila, J. A1 - Baringhaus, Jens A1 - Colambo, I. A1 - Dedkov, Yu. S. A1 - Herziger, Felix A1 - Lupina, Grzegorz A1 - Maultzsch, J. A1 - Schaffus, T. A1 - Schröder, Thomas A1 - Sowinska, Małgorzata A1 - Tegenkamp, Christoph A1 - Vignaud, D. A1 - Asensio, Maria Carmen T1 - Understanding the growth mechanism of graphene on Ge/Si(001) surfaces T2 - Scientific Reports Y1 - 2016 U6 - https://doi.org/10.1038/srep31639 SN - 2045-2322 IS - 6 SP - Art. 31639 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Hatami, Fariba A1 - Bartolomeo, Antonio di A1 - Niermann, Tore A1 - Hameed, Hussein Emad A1 - Schubert, Markus Andreas A1 - Krause, Hans-Michael A1 - Zaumseil, Peter A1 - Skibitzki, Oliver A1 - Masselink, William T. A1 - Lehmann, Michael A1 - Xie, Ya-Hong A1 - Schröder, Thomas T1 - Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b09592 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 40 SP - 26948 EP - 26955 ER - TY - GEN A1 - Sharat, S. U. A1 - Joseph, Merin A1 - Vogel, Stefan A1 - Hildebrandt, E. A1 - Komissinskiy, P. A1 - Kurian, J. A1 - Schröder, Thomas A1 - Alff, Lambert T1 - Impact of Oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOₓ/Pt based ReRAM T2 - Applied Physics Letters Y1 - 2016 U6 - https://doi.org/10.1063/1.4965872 SN - 1077-3118 SN - 0003-6951 VL - 109 IS - 17 SP - 173503 ER - TY - GEN A1 - Skibitzki, Oliver A1 - Capellini, Giovanni A1 - Yamamoto, Yuji A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Schröder, Thomas A1 - Ballabio, Andrea A1 - Bergamaschini, Roberto A1 - Salvalaglio, Marco A1 - Miglio, Leo A1 - Montalenti, Francesco T1 - RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b07694 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 39 SP - 26374 EP - 26380 ER -