TY - GEN A1 - Froehlich, K. A1 - Jančovič, P. A1 - Hudek, B. A1 - Dérer, J. A1 - Paskaleva, A. A1 - Bertaud, Thomas A1 - Schroeder, Thomas T1 - Atomic layer deposition of thin oxide films for resistive switching T2 - Electrochemical Society (ECS) Transactions Y1 - 2013 U6 - https://doi.org/10.1149/05810.0163ecst SN - 1938-6737 VL - 58 IS - 10 SP - 163 EP - 170 ER - TY - GEN A1 - Virgilio, Michele A1 - Manganelli, Constanza Lucia A1 - Grosso, G. A1 - Schroeder, Thomas A1 - Capellini, Giovanni T1 - Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 114 IS - 24 SP - 243102 EP - 243102-11 ER - TY - GEN A1 - Wang, P. A1 - Liang, O. A1 - Zhang, Wei A1 - Schroeder, Thomas A1 - Xie, Y. H. T1 - Ultra-Sensitive Graphene-Plasmonic Hybrid Platform for Label-Free Detection T2 - Advanced Materials Y1 - 2013 SN - 1521-4095 VL - 25 IS - 35 SP - 4918 EP - 4924 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas T1 - X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates T2 - Journal of Applied Crystallography Y1 - 2013 SN - 0021-8898 VL - 46 IS - 4 SP - 868 EP - 873 ER - TY - GEN A1 - Tarnawska, Lidia Lupina A1 - Dabrowski, Jarek Marek A1 - Grzela, Tomasz A1 - Niermann, T. A1 - Lehmann, M. A1 - Storck, Peter A1 - Schröder, Thomas T1 - Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and Theory T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 113 IS - 21 SP - 213507 EP - 213507 ER - TY - GEN A1 - Niermann, T. A1 - Zengler, D. A1 - Tarnawska, Lidia Lupina A1 - Storck, Peter A1 - Schroeder, Thomas T1 - Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): TEM Characterization of growth defects T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 113 IS - 22 SP - 223501 EP - 223501-8 ER - TY - GEN A1 - Schäfer, Anna A1 - Wendt, Fabian A1 - Mantl, Siegfried A1 - Hartdegen, Hilde A1 - Mikulics, Martin A1 - Schubert, Jürgen A1 - Luysberg, Martina A1 - Besmehn, Astrid A1 - Niu, Gang A1 - Schroeder, Thomas T1 - Hexagonal LaLuO3 as high-k dielectric T2 - Journal of Vacuum Science and Technology : B Y1 - 2015 U6 - https://doi.org/10.1116/1.4904401 VL - 33 SP - 01A104 ER - TY - GEN A1 - Di Gaspare, L. A1 - Sabbagh, D. A1 - De Seta, Monica A1 - Sodo, A. A1 - Wirths, S. A1 - Buca, Dan A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Capellini, Giovanni T1 - A very low temperature epi-cleaning process for Ge / GeSn heterostructures T2 - Journal of Applied Physics Y1 - 2015 U6 - https://doi.org/10.1063/1.4906616 SN - 1089-7550 VL - 117 SP - 045306 ER - TY - GEN A1 - Taoka, Noriyuki A1 - Asano, Takanori A1 - Yamaha, Takashi A1 - Terashima, Tatsuya A1 - Nakatsuka, Osamu A1 - Costina, Ioan A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Zaima, Shigeaki A1 - Schroeder, Thomas T1 - Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4908121 SN - 1077-3118 VL - 106 SP - 061107-1 EP - 061107-5 ER - TY - GEN A1 - Virgilio, Michele A1 - Witzigmann, Bernd A1 - Bolognini, Gabriele A1 - Guha, Subhajit A1 - Schröder, Thomas A1 - Capellini, Giovanni T1 - CMOS-compatible, modulator concept based on strain-induced refractive-index modulation T2 - Optics Express Y1 - 2015 U6 - https://doi.org/10.1364/OE.23.005930 SN - 1094-4087 VL - 23 IS - 5 SP - 5930 EP - 5940 ER -