TY - GEN A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Walczyk, Christian A1 - Kubotsch, S. A1 - Wenger, Christian A1 - Schröder, Thomas A1 - Vallée, Christophe A1 - Gonon, P. A1 - Mannequin, C. A1 - Jousseaume, V. A1 - Grampeix, Helen T1 - Resistive Switching of HfO2-based MIM diodes: Impact of the Top Electrode Materials T2 - Thin Solid Films Y1 - 2012 SN - 0040-6090 VL - 520 IS - 14 SP - 4551 EP - 4555 ER - TY - GEN A1 - Capellini, Giovanni A1 - De Seta, Monica A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Schroeder, Thomas T1 - High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3702443 SN - 0021-8979 VL - 111 IS - 7 ER - TY - GEN A1 - Zhang, Wei A1 - Sun, Ke A1 - Li, Biyun A1 - Lee, Jae Young A1 - Xie, Ya-Hong A1 - Katzer, Jens A1 - Schroeder, Thomas A1 - Wei, Xinyu A1 - Russell, Thomas P. T1 - Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si T2 - IEEE Transactions on Nanotechnology Y1 - 2012 U6 - https://doi.org/10.1109/TNANO.2012.2208472 SN - 1536-125X VL - 11 IS - 5 SP - 999 EP - 1003 ER - TY - GEN A1 - Tarnawska, Lidia Lupina A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Okur, S. A1 - Morkoc, H. A1 - Paszkiewicz, R. A1 - Storck, Peter A1 - Schroeder, Thomas T1 - Structural and optical quality of GaN on Sc2O3 / Y2O3 / Si(111) T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3699201 SN - 0021-8979 VL - 111 IS - 7 SP - 073509 EP - 073509-4 ER - TY - GEN A1 - Wang, Pu A1 - Zhang, Wei A1 - Liang, Owen A1 - Pantoja, Marcos A1 - Katzer, Jens A1 - Schroeder, Thomas A1 - Xie, Ya-Hong T1 - Giant enhancement and anomalous behavior of Graphene Raman spectra on plasmonic nanostructures T2 - ACS Nano Y1 - 2012 SN - 1936-086X VL - 6 IS - 7 SP - 6244 EP - 6249 ER - TY - GEN A1 - Bertaud, Thomas A1 - Sowinska, Małgorzata A1 - Walczyk, Damian A1 - Thiess, Sebastian A1 - Walczyk, Christian A1 - Gloskovski, A. A1 - Drube, W. A1 - Schroeder, Thomas T1 - In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy T2 - Applied Physics Letters Y1 - 2012 VL - 112 IS - 4 SP - 043506 EP - 043511 ER - TY - GEN A1 - Kozłowski, Grzegorz A1 - Fursenko, Oksana A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Vorderwestner, M. A1 - Storck, Peter T1 - The epitaxial growth of low defect SiGe buffer layers for integration of new materials on 300 mm silicon wafers T2 - ECS transactions Y1 - 2012 SN - 1938-6737 VL - 50 IS - 9 SP - 613 EP - 621 ER - TY - GEN A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Sowinska, Małgorzata A1 - Wolansky, Dirk A1 - Tillack, Bernd A1 - Schoof, Gunther A1 - Korolevych, R. A1 - Wenger, Christian A1 - Thiess, Sebastian A1 - Schroeder, Thomas A1 - Walczyk, Christian T1 - HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays T2 - ECS transactions Y1 - 2012 SN - 1938-6737 VL - 50 IS - 4 SP - 21 EP - 26 ER - TY - GEN A1 - Sowinska, Małgorzata A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Thiess, Sebastian A1 - Schubert, Markus Andreas A1 - Lukosius, Mindaugas A1 - Drube, W. A1 - Walczyk, Christian A1 - Schröder, Thomas T1 - Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures T2 - Applied Physics Letters Y1 - 2012 SN - 0003-6951 VL - 100 IS - 23 SP - 233509 EP - 233514 ER - TY - GEN A1 - Bartolomeo, Antonio di A1 - Santandrea, S. A1 - Giubileo, Filippo A1 - Romeo, Francesco A1 - Petrosino, Mario A1 - Citro, R. A1 - Barbara, P. A1 - Lupina, Grzegorz A1 - Schröder, Thomas A1 - Rubino, Alfredo T1 - Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors T2 - Diamond and Related Materials Y1 - 2013 SN - 0925-9635 VL - 38 IS - 13 SP - 19 EP - 23 ER - TY - GEN A1 - Froehlich, K. A1 - Jančovič, P. A1 - Hudek, B. A1 - Dérer, J. A1 - Paskaleva, A. A1 - Bertaud, Thomas A1 - Schroeder, Thomas T1 - Atomic layer deposition of thin oxide films for resistive switching T2 - Electrochemical Society (ECS) Transactions Y1 - 2013 U6 - https://doi.org/10.1149/05810.0163ecst SN - 1938-6737 VL - 58 IS - 10 SP - 163 EP - 170 ER - TY - GEN A1 - Virgilio, Michele A1 - Manganelli, Constanza Lucia A1 - Grosso, G. A1 - Schroeder, Thomas A1 - Capellini, Giovanni T1 - Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 114 IS - 24 SP - 243102 EP - 243102-11 ER - TY - GEN A1 - Wang, P. A1 - Liang, O. A1 - Zhang, Wei A1 - Schroeder, Thomas A1 - Xie, Y. H. T1 - Ultra-Sensitive Graphene-Plasmonic Hybrid Platform for Label-Free Detection T2 - Advanced Materials Y1 - 2013 SN - 1521-4095 VL - 25 IS - 35 SP - 4918 EP - 4924 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas T1 - X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates T2 - Journal of Applied Crystallography Y1 - 2013 SN - 0021-8898 VL - 46 IS - 4 SP - 868 EP - 873 ER - TY - GEN A1 - Tarnawska, Lidia Lupina A1 - Dabrowski, Jarek Marek A1 - Grzela, Tomasz A1 - Niermann, T. A1 - Lehmann, M. A1 - Storck, Peter A1 - Schröder, Thomas T1 - Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and Theory T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 113 IS - 21 SP - 213507 EP - 213507 ER - TY - GEN A1 - Niermann, T. A1 - Zengler, D. A1 - Tarnawska, Lidia Lupina A1 - Storck, Peter A1 - Schroeder, Thomas T1 - Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): TEM Characterization of growth defects T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 113 IS - 22 SP - 223501 EP - 223501-8 ER - TY - GEN A1 - Schäfer, Anna A1 - Wendt, Fabian A1 - Mantl, Siegfried A1 - Hartdegen, Hilde A1 - Mikulics, Martin A1 - Schubert, Jürgen A1 - Luysberg, Martina A1 - Besmehn, Astrid A1 - Niu, Gang A1 - Schroeder, Thomas T1 - Hexagonal LaLuO3 as high-k dielectric T2 - Journal of Vacuum Science and Technology : B Y1 - 2015 U6 - https://doi.org/10.1116/1.4904401 VL - 33 SP - 01A104 ER - TY - GEN A1 - Di Gaspare, L. A1 - Sabbagh, D. A1 - De Seta, Monica A1 - Sodo, A. A1 - Wirths, S. A1 - Buca, Dan A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Capellini, Giovanni T1 - A very low temperature epi-cleaning process for Ge / GeSn heterostructures T2 - Journal of Applied Physics Y1 - 2015 U6 - https://doi.org/10.1063/1.4906616 SN - 1089-7550 VL - 117 SP - 045306 ER - TY - GEN A1 - Taoka, Noriyuki A1 - Asano, Takanori A1 - Yamaha, Takashi A1 - Terashima, Tatsuya A1 - Nakatsuka, Osamu A1 - Costina, Ioan A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Zaima, Shigeaki A1 - Schroeder, Thomas T1 - Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4908121 SN - 1077-3118 VL - 106 SP - 061107-1 EP - 061107-5 ER - TY - GEN A1 - Virgilio, Michele A1 - Witzigmann, Bernd A1 - Bolognini, Gabriele A1 - Guha, Subhajit A1 - Schröder, Thomas A1 - Capellini, Giovanni T1 - CMOS-compatible, modulator concept based on strain-induced refractive-index modulation T2 - Optics Express Y1 - 2015 U6 - https://doi.org/10.1364/OE.23.005930 SN - 1094-4087 VL - 23 IS - 5 SP - 5930 EP - 5940 ER - TY - GEN A1 - Wirths, S. A1 - Troitsch, R. A1 - Mussler, G. A1 - Stoica, T. A1 - Hartmann, J.-M. A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Mantl, Siegfried A1 - Buca, Dan T1 - Ternary and Quaternary Ni(Si)GeSn Contact Formation for highly strained Ge p- and n-MOSFETs T2 - Semiconductor Science and Technology Y1 - 2015 U6 - https://doi.org/10.1088/0268-1242/30/5/055003 SN - 0268-1242 VL - 30 IS - 5 SP - 055003 ER - TY - GEN A1 - Kaletta, Udo Christian A1 - Wipf, Christian A1 - Fraschke, Mirko A1 - Wolansky, Dirk A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas A1 - Wenger, Christian T1 - AlN/SiO2/Si3N4/Si(100) based CMOS compatible surface acoustic wave filter with -12.8 dB minimum insertion loss T2 - IEEE Transactions on Electron Devices Y1 - 2015 U6 - https://doi.org/10.1109/TED.2015.2395443 SN - 0018-9383 VL - 62 IS - 3 SP - 764 EP - 768 ER - TY - GEN A1 - Koczorowski, Wojciech A1 - Grzela, Tomasz A1 - Radny, M. W. A1 - Schofield, S. R. A1 - Capellini, Giovanni A1 - Czajka, Ryszard A1 - Schröder, Thomas A1 - Curson, Neil J. T1 - Ba termination of Ge(001) studied with STM T2 - Nanotechnology Y1 - 2015 U6 - https://doi.org/10.1088/0957-4484/26/15/155701 SN - 1361-6528 SN - 0957-4484 VL - 26 IS - 15 SP - 155701 ER - TY - GEN A1 - Peschka, Dirk A1 - Thomas, Marc A1 - Glitzky, Annegret A1 - Nürnberg, Reiner A1 - Gärtner, Klaus A1 - Virgilio, Michele A1 - Guha, Shekhar A1 - Schröder, Thomas A1 - Capellini, Giovanni A1 - Koprucki, Thomas T1 - Modeling of edge-emitting lasers based on tensile strained Germanium microstripes T2 - IEEE Photonics Journal Y1 - 2015 U6 - https://doi.org/10.1109/JPHOT.2015.2427093 SN - 1943-0655 N1 - Article 1502115 VL - 7 IS - 3 ER - TY - GEN A1 - Schäfer, Anna A1 - Rahmanizadeh, K. A1 - Bihlmayer, G. A1 - Luysberg, Martina A1 - Wendt, Fabian A1 - Besmehn, Astrid A1 - Fox, A. A1 - Schnee, M. A1 - Niu, Gang A1 - Schroeder, Thomas A1 - Mantl, Siegfried A1 - Hartdegen, Hilde A1 - Mikulics, Martin A1 - Schubert, Jürgen T1 - Polymorphous GdScO3 as high permittivity dielectric T2 - Journal of Alloy and Compunds Y1 - 2015 U6 - https://doi.org/10.1016/j.jallcom.2015.08.135 SN - 0925-8388 VL - 651 SP - 514 EP - 520 ER - TY - GEN A1 - Salvalaglio, Marco A1 - Bergamaschini, Roberto A1 - Isa, Fabio A1 - Scaccabarozi, Andrea A1 - Isella, Giovanni A1 - Backofen, Rainer A1 - Voigt, Axel A1 - Montalenti, Francesco A1 - Capellini, Giovanni A1 - Marzegalli, Anna A1 - Schroeder, Thomas A1 - Känel, Hans von A1 - Miglio, Leo T1 - Engineering coalescence by annealing of 3D Ge microstructures into high-qualtiy suspended layers on Si T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/acsami.5b05054 SN - 1944-8244 VL - 7 IS - 34 SP - 19219 EP - 19225 ER - TY - GEN A1 - Virgilio, Michele A1 - Schröder, Thomas A1 - Yamamoto, Yuji A1 - Capellini, Giovanni T1 - Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling T2 - Journal of Applied Physics Y1 - 2015 U6 - https://doi.org/10.1063/1.4938026 SN - 1089-7550 SN - 0021-8979 VL - 118 IS - 23 SP - 233110 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Lupina, Grzegorz A1 - Niermann, Tore A1 - Salvalaglio, Marco A1 - Marzegalli, Anna A1 - Schubert, Markus Andreas A1 - Zaumseil, Peter A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Montalenti, Francesco A1 - Xie, Ya-Hong A1 - Schröder, Thomas T1 - Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns T2 - ACS Applied Materials and Interfaces Y1 - 2016 SN - 1944-8252 VL - 8 IS - 3 SP - 2017 EP - 2026 ER - TY - GEN A1 - Peschka, Dirk A1 - Thomas, Marita A1 - Glitzky, Annegret A1 - Nürnberg, Reiner A1 - Virgilio, Michele A1 - Guha, Subhajit A1 - Schröder, Thomas A1 - Capellini, Giovanni A1 - Koprucki, Thomas T1 - Robustness analysis of a device concept for edge-emitting lasers based on strained Germanium T2 - Optical and Quantum Electronics Y1 - 2016 SN - 1572-817X VL - 48 IS - 2, Article 156 ER - TY - GEN A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Skibitzki, Oliver A1 - Capellini, Giovanni A1 - Schröder, Thomas T1 - Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon T2 - Solid State Phenomena Y1 - 2016 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.402 SN - 1662-9779 SN - 0377-6883 VL - 242 SP - 402 EP - 407 ER - TY - GEN A1 - Taoka, Noriyuki A1 - Capellini, Giovanni A1 - Driesch, Nils von den A1 - Buca, Dan A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Klesse, Wolfgang Matthias A1 - Montanari, Michele A1 - Schröder, Thomas T1 - Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer T2 - Applied Physics Express Y1 - 2016 U6 - https://doi.org/10.7567/APEX.9.031201 SN - 1882-0786 SN - 1882-0778 VL - 9 IS - 3 SP - 031201 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Schubert, Markus Andreas A1 - Niermann, Tore A1 - Zaumseil, Peter A1 - Katzer, Jens A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Xie, Ya-Hong A1 - Känel, Hans von A1 - Schröder, Thomas T1 - Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers T2 - Scientific Reports Y1 - 2016 U6 - https://doi.org/10.1038/srep22709 SN - 2045-2322 VL - 6 SP - 22709 ER - TY - GEN A1 - Niu, Gang A1 - Calka, Pauline A1 - Walczyk, Christian A1 - Guha, Subhajit A1 - Fraschke, Mirko A1 - Fröhlich, K. A1 - Hamoumou, Philippe A1 - Gautier, Brice A1 - Alff, Lambert A1 - Schröder, Thomas T1 - Geometric conductive filament confinement by nanotips for resistive switching of HfO₂-RAM devices with high performance T2 - Scientific Reports Y1 - 2016 SN - 2045-2322 VL - 6 IS - 25757 ER - TY - GEN A1 - Ewert, Moritz A1 - Schmidt, Thomas A1 - Flege, Jan Ingo A1 - Heidmann, Inga A1 - Grzela, Tomasz A1 - Klesse, Wolfgang Matthias A1 - Förster, M. A1 - Aballe, Lucia A1 - Schröder, Thomas T1 - Morphology and Chemical Composition of Co Germanide islands on Ge(001): in-situ nanoscale insights into contact formation for Ge-based device technology T2 - Nanotechnology Y1 - 2016 SN - 1361-6528 SN - 0957-4484 VL - 27 IS - 32 SP - 325705 ER - TY - GEN A1 - Yang, Sang Mo A1 - Mazet, Lucie A1 - Okatan, M. Baris A1 - Jesse, Stephen A1 - Niu, Gang A1 - Schroeder, Thomas A1 - Schamm-Chardon, Sylvie A1 - Dubourdieu, Catherine A1 - Baddorf, Arthur P. A1 - Kalinin, Sergei V. T1 - Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopy T2 - Applied Physics Letters Y1 - 2016 U6 - https://doi.org/10.1063/1.4954276 SN - 1077-3118 VL - 108 IS - 25 SP - 252902 ER - TY - GEN A1 - Engelhard, M. A1 - Klemp, C. A1 - Behringer, M. A1 - Rudolph, A. A1 - Skibitzki, Oliver A1 - Zaumseil, Peter A1 - Schröder, Thomas T1 - Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth T2 - Journal of Applied Physics Y1 - 2016 U6 - https://doi.org/10.1063/1.4955333 SN - 1089-7550 SN - 0021-8979 VL - 120 IS - 4 SP - 045301 ER - TY - GEN A1 - Dabrowski, Jarek Marek A1 - Lippert, Gunther A1 - Avila, J. A1 - Baringhaus, Jens A1 - Colambo, I. A1 - Dedkov, Yu. S. A1 - Herziger, Felix A1 - Lupina, Grzegorz A1 - Maultzsch, J. A1 - Schaffus, T. A1 - Schröder, Thomas A1 - Sowinska, Małgorzata A1 - Tegenkamp, Christoph A1 - Vignaud, D. A1 - Asensio, Maria Carmen T1 - Understanding the growth mechanism of graphene on Ge/Si(001) surfaces T2 - Scientific Reports Y1 - 2016 U6 - https://doi.org/10.1038/srep31639 SN - 2045-2322 IS - 6 SP - Art. 31639 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Hatami, Fariba A1 - Bartolomeo, Antonio di A1 - Niermann, Tore A1 - Hameed, Hussein Emad A1 - Schubert, Markus Andreas A1 - Krause, Hans-Michael A1 - Zaumseil, Peter A1 - Skibitzki, Oliver A1 - Masselink, William T. A1 - Lehmann, Michael A1 - Xie, Ya-Hong A1 - Schröder, Thomas T1 - Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b09592 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 40 SP - 26948 EP - 26955 ER - TY - GEN A1 - Sharat, S. U. A1 - Joseph, Merin A1 - Vogel, Stefan A1 - Hildebrandt, E. A1 - Komissinskiy, P. A1 - Kurian, J. A1 - Schröder, Thomas A1 - Alff, Lambert T1 - Impact of Oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOₓ/Pt based ReRAM T2 - Applied Physics Letters Y1 - 2016 U6 - https://doi.org/10.1063/1.4965872 SN - 1077-3118 SN - 0003-6951 VL - 109 IS - 17 SP - 173503 ER - TY - GEN A1 - Skibitzki, Oliver A1 - Capellini, Giovanni A1 - Yamamoto, Yuji A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Schröder, Thomas A1 - Ballabio, Andrea A1 - Bergamaschini, Roberto A1 - Salvalaglio, Marco A1 - Miglio, Leo A1 - Montalenti, Francesco T1 - RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b07694 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 39 SP - 26374 EP - 26380 ER - TY - GEN A1 - Schlykow, Viktoria A1 - Klesse, Wolfgang Matthias A1 - Niu, Gang A1 - Taoka, Noriyuki A1 - Yamamoto, Yuji A1 - Skibitzki, Oliver A1 - Barget, M. R. A1 - Zaumseil, Peter A1 - Känel, Hans von A1 - Schubert, Markus Andreas A1 - Capellini, Giovanni A1 - Schroeder, Thomas T1 - Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001) T2 - Applied Physics Letters Y1 - 2016 U6 - https://doi.org/10.1063/1.4967500 SN - 1077-3118 VL - 109 IS - 20 SP - 202102 ER - TY - GEN A1 - Bartolomeo, Antonio di A1 - Passacantando, Maurizio A1 - Niu, Gang A1 - Schlykow, Viktoria A1 - Lupina, Grzegorz A1 - Giubileo, Filippo A1 - Schröder, Thomas T1 - Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanotip arrays T2 - Nanotechnology Y1 - 2016 SN - 1361-6528 SN - 0957-4484 VL - 27 IS - 48 SP - 485707 ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Kitzmann, Julia A1 - Lisker, Marco A1 - Kulse, Philipp A1 - Krüger, Andreas A1 - Fursenko, Oksana A1 - Costina, Ioan A1 - Trusch, Andreas A1 - Yamamoto, Yuji A1 - Wolff, Andre A1 - Mai, Andreas A1 - Schröder, Thomas T1 - Graphene Synthesis and Processing on Ge Substrates T2 - ECS transactions Y1 - 2016 U6 - https://doi.org/10.1149/07508.0533ecst SN - 1938-6737 SN - 1938-5862 VL - 75 IS - 8 SP - 533 EP - 540 ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Dabrowski, Jarek Marek A1 - Lisker, Marco A1 - Kitzmann, Julia A1 - Schulze, Sebastian A1 - Lippert, Gunther A1 - Fursenko, Oksana A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Krause, Hans-Michael A1 - Wolff, Andre A1 - Mai, A. A1 - Schröder, Thomas A1 - Lupina, Grzegorz T1 - Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b11397 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 49 SP - 33786 EP - 33793 ER - TY - GEN A1 - Grzela, Tomasz A1 - Capellini, Giovanni A1 - Koczorowski, Wojciech A1 - Schubert, Markus Andreas A1 - Czajka, Ryszard A1 - Curson, Neil J. A1 - Heidmann, Inga A1 - Schmidt, Thomas A1 - Falta, Jens A1 - Schröder, Thomas T1 - Growth and evolution of nickel – germanide nanonstructures on Ge(001) T2 - Nanotechnology Y1 - 2015 SN - 1361-6528 SN - 0957-4484 VL - 26 IS - 38 SP - 385701 ER - TY - GEN A1 - Wang, Pu A1 - Xia, Ming A1 - Liang, Owen A1 - Sun, Ke A1 - Cipriano, Aaron F. A1 - Schröder, Thomas A1 - Liu, Huinan A1 - Xie, Ya-Hong T1 - Label-free Neurotransmitter SERS Detection by Graphene-Gold Nanopyramid Heterostructure T2 - Analytical Chemistry Y1 - 2015 U6 - https://doi.org/10.1021/acs.analchem.5b01560 SN - 0003-2700 SN - 1520-6882 VL - 87 IS - 20 SP - 10255 EP - 10261 ER - TY - GEN A1 - Bartolomeo, Antonio di A1 - Giubileo, Filippo A1 - Romeo, Francesco A1 - Sabatino, Paolo A1 - Carapella, Giovanni A1 - Iemmo, Laura A1 - Schröder, Thomas A1 - Lupina, Grzegorz T1 - Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics T2 - Nanotechnology Y1 - 2015 SN - 1361-6528 SN - 0957-4484 VL - 26 IS - 47 SP - 475202 ER - TY - GEN A1 - Matbaechi Ettehad, Honeyeh A1 - Wenger, Christian T1 - Characterization and Separation of Live and Dead Yeast Cells Using CMOS-Based DEP Microfluidics T2 - Micromachines N2 - This study aims at developing a miniaturized CMOS integrated silicon-based microfluidic system, compatible with a standard CMOS process, to enable the characterization, and separation of live and dead yeast cells (as model bio-particle organisms) in a cell mixture using the DEP technique. DEP offers excellent benefits in terms of cost, operational power, and especially easy electrode integration with the CMOS architecture, and requiring label-free sample preparation. This can increase the likeliness of using DEP in practical settings. In this work the DEP force was generated using an interdigitated electrode arrays (IDEs) placed on the bottom of a CMOS-based silicon microfluidic channel. This system was primarily used for the immobilization of yeast cells using DEP. This study validated the system for cell separation applications based on the distinct responses of live and dead cells and their surrounding media. The findings confirmed the device’s capability for efficient, rapid and selective cell separation. The viability of this CMOS embedded microfluidic for dielectrophoretic cell manipulation applications and compatibility of the dielectrophoretic structure with CMOS production line and electronics, enabling its future commercially mass production. KW - dielectrophoresis KW - microfluidics KW - cell characterization KW - CMOS Y1 - 2021 U6 - https://doi.org/10.3390/mi12030270 SN - 2072-666X VL - 12 IS - 3 ER - TY - GEN A1 - Soltani Zarrin, Pouya A1 - Wenger, Christian T1 - Implementation of Siamese-Based Few-Shot Learning Algorithms for the Distinction of COPD and Asthma Subjects T2 - Artificial Neural Networks and Machine Learning – ICANN 2020 : 29th International Conference on Artificial Neural Networks, Bratislava, Slovakia, September 15–18, 2020, Proceedings, Part I N2 - This paper investigates the practicality of applying braininspired Few-Shot Learning (FSL) algorithms for addressing shortcomings of Machine Learning (ML) methods in medicine with limited data availability. As a proof of concept, the application of ML for the detection of Chronic Obstructive Pulmonary Disease (COPD) patients was investigated. The complexities associated with the distinction of COPD and asthma patients and the lack of sufficient training data for asthma subjects impair the performance of conventional ML models for the recognition of COPD. Therefore, the objective of this study was to implement FSL methods for the distinction of COPD and asthma subjects with a few available data points. The proposed FSL models in this work were capable of recognizing asthma and COPD patients with 100% accuracy, demonstrating the feasibility of the approach for applications such as medicine with insufficient data availability. KW - Machine Learning KW - COPD Y1 - 2020 U6 - https://doi.org/10.1007/978-3-030-61609-0_34 SP - 431 EP - 440 PB - Springer CY - Cham ER - TY - GEN A1 - Perez-Avila, Antonio Javier A1 - Gonzalez-Cordero, Gerardo A1 - Perez, Eduardo A1 - Perez-Bosch Quesada, Emilio A1 - Mahadevaiah, Mamathamba Kalishettyhalli A1 - Wenger, Christian A1 - Roldan, Juan Bautista A1 - Jimenez-Molinos, Francisco T1 - Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation T2 - XXXV Conference on Design of Circuits and Integrated Systems (DCIS), Segovia, Spain N2 - An artificial neural network based on resistive switching memristors is implemented and simulated in LTspice. The influence of memristor variability and the reduction of the continuous range of synaptic weights into a discrete set of conductance levels is analyzed. To do so, a behavioral model is proposed for multilevel resistive switching memristors based on Al-doped HfO2 dielectrics, and it is implemented in a spice based circuit simulator. The model provides an accurate description of the conductance in the different conductive states in addition to describe the device-to-device variability KW - RRAM KW - Multilevel switching KW - behavorial model Y1 - 2020 U6 - https://doi.org/10.1109/DCIS51330.2020.9268652 ER -