TY - GEN A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Walczyk, Christian A1 - Kubotsch, S. A1 - Wenger, Christian A1 - Schröder, Thomas A1 - Vallée, Christophe A1 - Gonon, P. A1 - Mannequin, C. A1 - Jousseaume, V. A1 - Grampeix, Helen T1 - Resistive Switching of HfO2-based MIM diodes: Impact of the Top Electrode Materials T2 - Thin Solid Films Y1 - 2012 SN - 0040-6090 VL - 520 IS - 14 SP - 4551 EP - 4555 ER - TY - GEN A1 - Capellini, Giovanni A1 - De Seta, Monica A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Schroeder, Thomas T1 - High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3702443 SN - 0021-8979 VL - 111 IS - 7 ER - TY - GEN A1 - Zhang, Wei A1 - Sun, Ke A1 - Li, Biyun A1 - Lee, Jae Young A1 - Xie, Ya-Hong A1 - Katzer, Jens A1 - Schroeder, Thomas A1 - Wei, Xinyu A1 - Russell, Thomas P. T1 - Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si T2 - IEEE Transactions on Nanotechnology Y1 - 2012 U6 - https://doi.org/10.1109/TNANO.2012.2208472 SN - 1536-125X VL - 11 IS - 5 SP - 999 EP - 1003 ER - TY - GEN A1 - Tarnawska, Lidia Lupina A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Okur, S. A1 - Morkoc, H. A1 - Paszkiewicz, R. A1 - Storck, Peter A1 - Schroeder, Thomas T1 - Structural and optical quality of GaN on Sc2O3 / Y2O3 / Si(111) T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3699201 SN - 0021-8979 VL - 111 IS - 7 SP - 073509 EP - 073509-4 ER - TY - GEN A1 - Wang, Pu A1 - Zhang, Wei A1 - Liang, Owen A1 - Pantoja, Marcos A1 - Katzer, Jens A1 - Schroeder, Thomas A1 - Xie, Ya-Hong T1 - Giant enhancement and anomalous behavior of Graphene Raman spectra on plasmonic nanostructures T2 - ACS Nano Y1 - 2012 SN - 1936-086X VL - 6 IS - 7 SP - 6244 EP - 6249 ER - TY - GEN A1 - Bertaud, Thomas A1 - Sowinska, Małgorzata A1 - Walczyk, Damian A1 - Thiess, Sebastian A1 - Walczyk, Christian A1 - Gloskovski, A. A1 - Drube, W. A1 - Schroeder, Thomas T1 - In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy T2 - Applied Physics Letters Y1 - 2012 VL - 112 IS - 4 SP - 043506 EP - 043511 ER - TY - GEN A1 - Kozłowski, Grzegorz A1 - Fursenko, Oksana A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Vorderwestner, M. A1 - Storck, Peter T1 - The epitaxial growth of low defect SiGe buffer layers for integration of new materials on 300 mm silicon wafers T2 - ECS transactions Y1 - 2012 SN - 1938-6737 VL - 50 IS - 9 SP - 613 EP - 621 ER - TY - GEN A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Sowinska, Małgorzata A1 - Wolansky, Dirk A1 - Tillack, Bernd A1 - Schoof, Gunther A1 - Korolevych, R. A1 - Wenger, Christian A1 - Thiess, Sebastian A1 - Schroeder, Thomas A1 - Walczyk, Christian T1 - HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays T2 - ECS transactions Y1 - 2012 SN - 1938-6737 VL - 50 IS - 4 SP - 21 EP - 26 ER - TY - GEN A1 - Sowinska, Małgorzata A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Thiess, Sebastian A1 - Schubert, Markus Andreas A1 - Lukosius, Mindaugas A1 - Drube, W. A1 - Walczyk, Christian A1 - Schröder, Thomas T1 - Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures T2 - Applied Physics Letters Y1 - 2012 SN - 0003-6951 VL - 100 IS - 23 SP - 233509 EP - 233514 ER - TY - GEN A1 - Bartolomeo, Antonio di A1 - Santandrea, S. A1 - Giubileo, Filippo A1 - Romeo, Francesco A1 - Petrosino, Mario A1 - Citro, R. A1 - Barbara, P. A1 - Lupina, Grzegorz A1 - Schröder, Thomas A1 - Rubino, Alfredo T1 - Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors T2 - Diamond and Related Materials Y1 - 2013 SN - 0925-9635 VL - 38 IS - 13 SP - 19 EP - 23 ER -