TY - GEN A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Walczyk, Christian A1 - Kubotsch, S. A1 - Wenger, Christian A1 - Schröder, Thomas A1 - Vallée, Christophe A1 - Gonon, P. A1 - Mannequin, C. A1 - Jousseaume, V. A1 - Grampeix, Helen T1 - Resistive Switching of HfO2-based MIM diodes: Impact of the Top Electrode Materials T2 - Thin Solid Films Y1 - 2012 SN - 0040-6090 VL - 520 IS - 14 SP - 4551 EP - 4555 ER - TY - GEN A1 - Capellini, Giovanni A1 - De Seta, Monica A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Schroeder, Thomas T1 - High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3702443 SN - 0021-8979 VL - 111 IS - 7 ER - TY - GEN A1 - Zhang, Wei A1 - Sun, Ke A1 - Li, Biyun A1 - Lee, Jae Young A1 - Xie, Ya-Hong A1 - Katzer, Jens A1 - Schroeder, Thomas A1 - Wei, Xinyu A1 - Russell, Thomas P. T1 - Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si T2 - IEEE Transactions on Nanotechnology Y1 - 2012 U6 - https://doi.org/10.1109/TNANO.2012.2208472 SN - 1536-125X VL - 11 IS - 5 SP - 999 EP - 1003 ER - TY - GEN A1 - Tarnawska, Lidia Lupina A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Okur, S. A1 - Morkoc, H. A1 - Paszkiewicz, R. A1 - Storck, Peter A1 - Schroeder, Thomas T1 - Structural and optical quality of GaN on Sc2O3 / Y2O3 / Si(111) T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3699201 SN - 0021-8979 VL - 111 IS - 7 SP - 073509 EP - 073509-4 ER - TY - GEN A1 - Wang, Pu A1 - Zhang, Wei A1 - Liang, Owen A1 - Pantoja, Marcos A1 - Katzer, Jens A1 - Schroeder, Thomas A1 - Xie, Ya-Hong T1 - Giant enhancement and anomalous behavior of Graphene Raman spectra on plasmonic nanostructures T2 - ACS Nano Y1 - 2012 SN - 1936-086X VL - 6 IS - 7 SP - 6244 EP - 6249 ER - TY - GEN A1 - Bertaud, Thomas A1 - Sowinska, Małgorzata A1 - Walczyk, Damian A1 - Thiess, Sebastian A1 - Walczyk, Christian A1 - Gloskovski, A. A1 - Drube, W. A1 - Schroeder, Thomas T1 - In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy T2 - Applied Physics Letters Y1 - 2012 VL - 112 IS - 4 SP - 043506 EP - 043511 ER - TY - GEN A1 - Kozłowski, Grzegorz A1 - Fursenko, Oksana A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Vorderwestner, M. A1 - Storck, Peter T1 - The epitaxial growth of low defect SiGe buffer layers for integration of new materials on 300 mm silicon wafers T2 - ECS transactions Y1 - 2012 SN - 1938-6737 VL - 50 IS - 9 SP - 613 EP - 621 ER - TY - GEN A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Sowinska, Małgorzata A1 - Wolansky, Dirk A1 - Tillack, Bernd A1 - Schoof, Gunther A1 - Korolevych, R. A1 - Wenger, Christian A1 - Thiess, Sebastian A1 - Schroeder, Thomas A1 - Walczyk, Christian T1 - HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays T2 - ECS transactions Y1 - 2012 SN - 1938-6737 VL - 50 IS - 4 SP - 21 EP - 26 ER - TY - GEN A1 - Sowinska, Małgorzata A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Thiess, Sebastian A1 - Schubert, Markus Andreas A1 - Lukosius, Mindaugas A1 - Drube, W. A1 - Walczyk, Christian A1 - Schröder, Thomas T1 - Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures T2 - Applied Physics Letters Y1 - 2012 SN - 0003-6951 VL - 100 IS - 23 SP - 233509 EP - 233514 ER - TY - GEN A1 - Bartolomeo, Antonio di A1 - Santandrea, S. A1 - Giubileo, Filippo A1 - Romeo, Francesco A1 - Petrosino, Mario A1 - Citro, R. A1 - Barbara, P. A1 - Lupina, Grzegorz A1 - Schröder, Thomas A1 - Rubino, Alfredo T1 - Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors T2 - Diamond and Related Materials Y1 - 2013 SN - 0925-9635 VL - 38 IS - 13 SP - 19 EP - 23 ER - TY - GEN A1 - Froehlich, K. A1 - Jančovič, P. A1 - Hudek, B. A1 - Dérer, J. A1 - Paskaleva, A. A1 - Bertaud, Thomas A1 - Schroeder, Thomas T1 - Atomic layer deposition of thin oxide films for resistive switching T2 - Electrochemical Society (ECS) Transactions Y1 - 2013 U6 - https://doi.org/10.1149/05810.0163ecst SN - 1938-6737 VL - 58 IS - 10 SP - 163 EP - 170 ER - TY - GEN A1 - Virgilio, Michele A1 - Manganelli, Constanza Lucia A1 - Grosso, G. A1 - Schroeder, Thomas A1 - Capellini, Giovanni T1 - Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 114 IS - 24 SP - 243102 EP - 243102-11 ER - TY - GEN A1 - Wang, P. A1 - Liang, O. A1 - Zhang, Wei A1 - Schroeder, Thomas A1 - Xie, Y. H. T1 - Ultra-Sensitive Graphene-Plasmonic Hybrid Platform for Label-Free Detection T2 - Advanced Materials Y1 - 2013 SN - 1521-4095 VL - 25 IS - 35 SP - 4918 EP - 4924 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas T1 - X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates T2 - Journal of Applied Crystallography Y1 - 2013 SN - 0021-8898 VL - 46 IS - 4 SP - 868 EP - 873 ER - TY - GEN A1 - Tarnawska, Lidia Lupina A1 - Dabrowski, Jarek Marek A1 - Grzela, Tomasz A1 - Niermann, T. A1 - Lehmann, M. A1 - Storck, Peter A1 - Schröder, Thomas T1 - Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and Theory T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 113 IS - 21 SP - 213507 EP - 213507 ER - TY - GEN A1 - Niermann, T. A1 - Zengler, D. A1 - Tarnawska, Lidia Lupina A1 - Storck, Peter A1 - Schroeder, Thomas T1 - Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): TEM Characterization of growth defects T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 113 IS - 22 SP - 223501 EP - 223501-8 ER - TY - GEN A1 - Schäfer, Anna A1 - Wendt, Fabian A1 - Mantl, Siegfried A1 - Hartdegen, Hilde A1 - Mikulics, Martin A1 - Schubert, Jürgen A1 - Luysberg, Martina A1 - Besmehn, Astrid A1 - Niu, Gang A1 - Schroeder, Thomas T1 - Hexagonal LaLuO3 as high-k dielectric T2 - Journal of Vacuum Science and Technology : B Y1 - 2015 U6 - https://doi.org/10.1116/1.4904401 VL - 33 SP - 01A104 ER - TY - GEN A1 - Di Gaspare, L. A1 - Sabbagh, D. A1 - De Seta, Monica A1 - Sodo, A. A1 - Wirths, S. A1 - Buca, Dan A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Capellini, Giovanni T1 - A very low temperature epi-cleaning process for Ge / GeSn heterostructures T2 - Journal of Applied Physics Y1 - 2015 U6 - https://doi.org/10.1063/1.4906616 SN - 1089-7550 VL - 117 SP - 045306 ER - TY - GEN A1 - Taoka, Noriyuki A1 - Asano, Takanori A1 - Yamaha, Takashi A1 - Terashima, Tatsuya A1 - Nakatsuka, Osamu A1 - Costina, Ioan A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Zaima, Shigeaki A1 - Schroeder, Thomas T1 - Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4908121 SN - 1077-3118 VL - 106 SP - 061107-1 EP - 061107-5 ER - TY - GEN A1 - Virgilio, Michele A1 - Witzigmann, Bernd A1 - Bolognini, Gabriele A1 - Guha, Subhajit A1 - Schröder, Thomas A1 - Capellini, Giovanni T1 - CMOS-compatible, modulator concept based on strain-induced refractive-index modulation T2 - Optics Express Y1 - 2015 U6 - https://doi.org/10.1364/OE.23.005930 SN - 1094-4087 VL - 23 IS - 5 SP - 5930 EP - 5940 ER -