TY - GEN
A1 - Schlipf, Jon
A1 - Martin, Elena
A1 - Stchakovsky, Michel
A1 - Benedetti, Alessandro
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
A1 - Chiussi, Stefano
T1 - Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy
T2 - Journal of Vacuum Science & Technology B
Y1 - 2019
U6 - https://doi.org/10.1116/1.5122777
SN - 2166-2754
VL - 37
IS - 6
ER -
TY - GEN
A1 - Funk, Hannes S.
A1 - Kern, Michael
A1 - Weisshaupt, David
A1 - Sürgers, Christoph
A1 - Fischer, Inga Anita
A1 - Oehme, Michael
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content
T2 - ECS Transactions
Y1 - 2019
U6 - https://doi.org/10.1149/09301.0101ecst
SN - 1938-5862
SN - 1938-6737
VL - 93
IS - 1
SP - 101
EP - 104
ER -
TY - GEN
A1 - Fischer, Inga Anita
A1 - Augel, Lion
A1 - Berkmann, Fritz
A1 - Kawaguchi, Yuma
A1 - Schlipf, Jon
A1 - Schulze, Jörg
T1 - Plasmonics-Integrated Ge PIN-Photodetectors
T2 - ECS Transactions
Y1 - 2019
U6 - https://doi.org/10.1149/09301.0041ecst
SN - 1938-5862
SN - 1938-6737
VL - 93
IS - 1
SP - 41
EP - 44
ER -
TY - GEN
A1 - Fischer, Inga Anita
A1 - Clausen, Caterina J.
A1 - Schwarz, Daniel
A1 - Zaumseil, Peter
A1 - Capellini, Giovanni
A1 - Virgilio, Michele
A1 - Da Silva Figueira, Maria Cecilia
A1 - Birner, Stefan
A1 - Koelling, Sebastian
A1 - Koenraad, Paul M.
A1 - Huang, Michael R. S.
A1 - Koch, Christoph T.
A1 - Wendav, Torsten
A1 - Busch, Kurt
A1 - Schulze, Jörg
T1 - Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells
T2 - Physical Review Materials
Y1 - 2020
U6 - https://doi.org/10.1103/PhysRevMaterials.4.024601
SN - 2475-9953
VL - 4
IS - 2
ER -
TY - GEN
A1 - Schlykow, Viktoria
A1 - Manganelli, Constanza Lucia
A1 - Römer, Friedhard
A1 - Clausen, Caterina J.
A1 - Augel, Lion
A1 - Schulze, Jörg
A1 - Katzer, Jens
A1 - Schubert, Michael Andreas
A1 - Witzigmann, Bernd
A1 - Schroeder, Thomas
A1 - Capellini, Giovanni
A1 - Fischer, Inga Anita
T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas
T2 - Nanotechnology
Y1 - 2020
U6 - https://doi.org/10.1088/1361-6528/ab91ef
SN - 1361-6528
VL - 31
IS - 34
ER -
TY - GEN
A1 - Augel, Lion
A1 - Fischer, Inga Anita
A1 - Gollhofer, Martin
A1 - Oehme, Michael
A1 - Schulze, Jörg
T1 - Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas
T2 - Journal of Applied Physics
Y1 - 2020
U6 - https://doi.org/10.1063/5.0012279
SN - 1089-7550
VL - 128
IS - 1
SP - 013105-1
EP - 013105-8
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Kern, Michal
A1 - Dettling, Marco M.
A1 - Schwarz, Daniel
A1 - Oehme, Michael
A1 - Sürgers, Christoph
A1 - Slageren, Joris van
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8% Sn
T2 - Journal of Physics: Condensed Matter
Y1 - 2021
U6 - https://doi.org/10.1088/1361-648X/abcb68
SN - 1361-648X
VL - 33
IS - 8
ER -
TY - GEN
A1 - Schlipf, Jon
A1 - Tetzner, Henriette
A1 - Spirito, Davide
A1 - Manganelli, Constanza Lucia
A1 - Capellini, Giovanni
A1 - Huang, Michael R. S.
A1 - Koch, Christoph T.
A1 - Clausen, Caterina J.
A1 - Elsayed, Ahmed
A1 - Schulze, Jörg
A1 - Fischer, Inga Anita
T1 - Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content
T2 - Journal of Raman Spectroscopy
Y1 - 2021
U6 - https://doi.org/10.1002/jrs.6098
SN - 1097-4555
ER -
TY - GEN
A1 - Augel, Lion
A1 - Schlipf, Jon
A1 - Bullert, Sergej
A1 - Bürzele, Sebastian
A1 - Schulze, Jörg
A1 - Fischer, Inga Anita
T1 - Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes
T2 - Scientific Reports
N2 - Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.
Y1 - 2021
U6 - https://doi.org/10.1038/s41598-021-85012-z
SN - 2045-2322
IS - 11
ER -
TY - GEN
A1 - Schlipf, Jon
A1 - Fischer, Inga Anita
T1 - Rigorous coupled-wave analysis of a multi-layered plasmonic integrated refractive index sensor
T2 - Optics Express
Y1 - 2021
U6 - https://doi.org/10.1364/OE.438585
SN - 1094-4087
VL - Vol. 29
IS - 22
SP - 36201
EP - 36210
ER -
TY - GEN
A1 - Tetzner, Henriette
A1 - Fischer, Inga Anita
A1 - Skibitzki, Oliver
A1 - Mirza, M. M.
A1 - Manganelli, Constanza Lucia
A1 - Luongo, G.
A1 - Spirito, Davide
A1 - Douglas, J. P.
A1 - De Seta, Monica
A1 - Capellini, Giovanni
T1 - Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)
T2 - Applied Physics Letters
Y1 - 2021
U6 - https://doi.org/10.1063/5.0064477
SN - 1077-3118
SN - 0003-6951
VL - 119
IS - 15
ER -
TY - GEN
A1 - Bergmann, Fritz
A1 - Ayasse, Markus
A1 - Schlipf, Jon
A1 - Mörz, Florian
A1 - Weißhaupt, David
A1 - Oehme, Michael
A1 - Prucnal, Slawomir
A1 - Kawaguchi, Yuma
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Plasmonic gratings from highly doped Ge1−ySny films on Si
T2 - Journal of Physics D: Applied Physics
Y1 - 2021
SN - 1361-6463
VL - 54
IS - 44
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Sürgers, Christoph
A1 - Fischer, Gerda
A1 - Oehme, Michael
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics
T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021
Y1 - 2021
SN - 978-1-6654-4761-4
U6 - https://doi.org/10.23919/MIPRO52101.2021.9596924.
SN - 978-953-233-101-1
SP - 45
EP - 49
PB - Piscataway
CY - IEEE
ER -
TY - GEN
A1 - Berkmann, Fritz
A1 - Ayasse, Markus
A1 - Mörz, Florian
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Titanium and Nickel as alternative materials for mid Infrared Plasmonic
T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021
Y1 - 2021
SN - 978-953-233-101-1
SN - 978-1-6654-4761-4
U6 - https://doi.org/10.23919/MIPRO52101.2021.9597155
SP - 36
EP - 39
PB - Piscataway
CY - IEEE
ER -
TY - GEN
A1 - Funk, Hannes S.
A1 - Kern, Michael
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Fischer, Inga Anita
A1 - Oehme, Michael
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers
T2 - Journal of Magnetism and Magnetic Materials
Y1 - 2022
U6 - https://doi.org/10.1016/j.jmmm.2021.168731.
SN - 0304-8853
VL - 546
ER -
TY - GEN
A1 - Elogail, Yasmine
A1 - Berkmann, Fritz
A1 - Clausen, Caterina J.
A1 - Fischer, Inga Anita
A1 - Hänel, Linda A.
A1 - Schwarz, Daniel
A1 - Schulze, Jörg
T1 - Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated
on Si
T2 - Microelectronics Journal
Y1 - 2022
U6 - https://doi.org/10.1016/j.mejo.2022.105404
SN - 1879-2391
VL - 123
ER -
TY - GEN
A1 - Xie, Yufang
A1 - Birowska, Magdalena
A1 - Funk, Hannes S.
A1 - Fischer, Inga Anita
A1 - Schwarz, Daniel
A1 - Schulze, Jörg
A1 - Zeng, Yu-Jia
A1 - Helm, Manfred
A1 - Zhou, Shengqiang
A1 - Prucnal, Slawomir
T1 - Tuning of Curie temperature in Mn5Ge3 films
T2 - Journal of Applied Physics
Y1 - 2022
U6 - https://doi.org/10.1063/5.0066717
SN - 1089-7550
VL - 131
SP - 105102-1
EP - 105102-8
ER -
TY - GEN
A1 - Berkmann, Fritz
A1 - Augel, Lion
A1 - Hack, Michael
A1 - Kawaguchi, Yuma
A1 - Weißhaupt, David
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Optimization of fully integrated Al nanohole array-based refractive index sensors for use with a LED light source Fritz Berkmann
T2 - IEEE Photonics Journal
KW - Sensors
KW - Refractive index
KW - Optical variables control
KW - Optical refraction
KW - Optical device fabrication
KW - Germanium
KW - Solid modeling
Y1 - 2022
UR - https://ieeexplore.ieee.org/document/9781306
U6 - https://doi.org/10.1109/JPHOT.2022.3177354
SN - 1943-0655
VL - 14
IS - 3
SP - 1
EP - 8
ER -
TY - GEN
A1 - Xie, Yufang
A1 - Li, Zichao
A1 - Begeza, Viktor
A1 - Funk, Hannes S.
A1 - Fischer, Inga Anita
A1 - Zeng, Yu-Jia
A1 - Helm, Manfred
A1 - Zhou, Shengqiang
A1 - Prucnal, Slawomir
T1 - Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3
T2 - Semiconductor Science and Technology
N2 - Mn5Ge3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn5Ge3 layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) method. We investigate the influence of the substrate orientation, Mn layer thickness and annealing parameters on the crystallographic orientation and magnetization of Mn5Ge3. It is shown that after millisecond range SPE, Mn5Ge3 films always have a preferred (100) orientation whether grown on Ge (001) or (111) substrates, which determines the orientation of the magnetization easy axis lying in the film plane along c axis independent of the layer thickness. The Curie temperature of Mn5Ge3 weakly depends on fabrication parameters.
KW - solid phase epitaxy
KW - flash lamp annealing
KW - ferromagnetic film
KW - spintronic
KW - fabrication parameter
KW - structural property
Y1 - 2022
UR - https://iopscience.iop.org/article/10.1088/1361-6641/ac6689
U6 - https://doi.org/10.1088/1361-6641/ac6689
SN - 1361-6641
VL - 37
IS - 6
SP - 1
EP - 8
ER -
TY - GEN
A1 - Fischer, Inga Anita
A1 - Brehm, Moritz
A1 - De Seta, Monica
A1 - Isella, Giovanni
A1 - Paul, Douglas J.
A1 - Virgilio, Michele
A1 - Capellini, Giovanni
T1 - On-chip infrared photonics with Si-Ge-heterostructures: What is next?
T2 - APL Photonics
N2 - The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform
KW - Heterostructures
KW - Photodetectors
KW - Photonics
KW - Nanowires
KW - Plasmonics
KW - Epitaxy
KW - Quantum wells
KW - Lasers
KW - Sensors
KW - Electronic band structure
Y1 - 2022
UR - https://aip.scitation.org/doi/10.1063/5.0078608
U6 - https://doi.org/10.1063/5.0078608
SN - 2378-0967
VL - 7
IS - 5
SP - 050901-1
EP - 050901-20
ER -
TY - GEN
A1 - Mai, Christian
A1 - Marschmeyer, Steffen
A1 - Peczek, Anna
A1 - Kroh, Aleksandra
A1 - Jose, Josmy
A1 - Reiter, Sebastian
A1 - Fischer, Inga Anita
A1 - Wenger, Christian
A1 - Mai, Andreas
T1 - Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology
T2 - ECS Transactions
N2 - In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2 at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 % and RMS of 1.413 nm for 150 nm thick TiN layers.
KW - plasmonics
KW - nanohole array
KW - germanium detector
Y1 - 2022
U6 - https://doi.org/10.1149/10904.0035ecst
SN - 1938-5862
VL - 109
IS - 4
SP - 35
EP - 46
ER -
TY - GEN
A1 - Steuer, Oliver
A1 - Schwarz, Daniel
A1 - Oehme, Michael
A1 - Schulze, J.
A1 - Maczko, H.
A1 - Kudrawiec, Robert
A1 - Fischer, Inga Anita
A1 - Heller, R.
A1 - Hübner, R.
A1 - Khan, M. M.
A1 - Georgiev, Yordan M.
A1 - Zhou, Shengqiang
A1 - Helm, M.
A1 - Prucnal, Slawomir
T1 - Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
T2 - Journal of Physics: Condensed Matter
Y1 - 2022
U6 - https://doi.org/10.1088/1361-648X/aca3ea
SN - 1361-648X
VL - 35
IS - 5
ER -
TY - GEN
A1 - Efremenko, Yulia
A1 - Laroussi, Arwa
A1 - Sengül, Akant
A1 - Corley-Wiciak, Agnieszka Anna
A1 - Fischer, Inga Anita
A1 - Mirsky, Vladimir M.
T1 - Deposition of Polymers on Titanium Nitride Electrodes
T2 - Coatings
N2 - The application of titanium nitride (TiN) as an electrode for electrochemical deposition or characterization requires the removal of an insulating layer from its surface. This process was studied and optimized, and the conditions for the complete removal of this layer through treatment with oxalic acid were formulated. The obtained TiN surfaces were used for the deposition of various conducting and non-conducting polymers. Two different approaches were applied: (i) in situ electrochemical synthesis of the main classes of conducting polymers, including polyaniline, polypyrrole, polythiophene, and selected derivatives thereof, and (ii) electrostatically driven layer-by-layer (LbL) deposition of multilayers of oppositely charged polyelectrolytes. The deposited polymers were characterized by electrochemical methods. The electrochemical properties of the deposited conducting polymers and their deposition on the TiN surface were comparable to those of the metallic electrodes. The films produced via LbL deposition exhibited a pronounced influence of the charge of the last deposited polymer on the redox reaction of ferri/ferrocyanide, validating the charge alteration with each successive polymer layer deposition. The studied deposition technologies can be used for the modification of TiN surfaces required in applications of this material in chemical sensors and other devices.
Y1 - 2024
U6 - https://doi.org/10.3390/coatings14020215
SN - 2079-6412
VL - 14
IS - 2
ER -
TY - GEN
A1 - Oleynik, Paul
A1 - Berkmann, Fritz
A1 - Reiter, Sebastian
A1 - Schlipf, Jon
A1 - Ratzke, Markus
A1 - Yamamoto, Yuji
A1 - Fischer, Inga Anita
T1 - Strong Optical Coupling of Lattice Resonances in a Top-down Fabricated Hybrid Metal–Dielectric Al/Si/Ge Metasurface
T2 - Nano Letters
N2 - Optical metasurfaces enable the manipulation of the light–matter interaction in ultrathin layers. Compared with their metal or dielectric counterparts, hybrid metasurfaces resulting from the combination of dielectric and metallic nanostructures can offer increased possibilities for interactions between modes present in the system. Here, we investigate the interaction between lattice resonances in a hybrid metal–dielectric metasurface obtained from a single-step nanofabrication process. Finite-difference time domain simulations show the avoided crossing of the modes appearing in the wavelength-dependent absorptance inside the Ge upon variations in a selected geometry parameter as evidence for strong optical coupling. We find good agreement between the measured and simulated absorptance and reflectance spectra. Our metasurface design can be easily incorporated into a top-down optoelectronic device fabrication process with possible applications ranging from on-chip spectroscopy to sensing.
KW - metamaterials
KW - semiconductors
KW - hybridization
KW - optoelectronics
Y1 - 2024
U6 - https://doi.org/10.1021/acs.nanolett.3c05050
SN - 1530-6984
SN - 1530-6992
VL - 24
IS - 10
SP - 3142
EP - 3149
ER -
TY - GEN
A1 - Nitsch, Paul-G.
A1 - Ratzke, Markus
A1 - Pozarowska, Emilia
A1 - Flege, Jan Ingo
A1 - Alvarado Chavarin, Carlos
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Deposition of reduced ceria thin films by reactive magnetron sputtering for the development of a resistive gas sensor
T2 - Verhandlungen der DPG, Berlin 2024
N2 - The use of cerium oxide for hydrogen sensing is limited by the low electrical conductivity of layers deposited from a ceria target. To increase the electrical conductivity, partially reduced cerium oxide layers were obtained from a metallic cerium target by reactive magnetron sputtering. The proportions of the oxidation states Ce3+, present in reduced species, and Ce4+, present in fully oxidized species, were determined by ex-situ XPS. For electrical characterization, films were deposited on planarized tungsten finger electrodes. IV curves were measured over several days to investigate possible influences of oxygen and humidity on electrical conductivity. The morphological stability of the layers under ambient conditions was investigated by microscopical methods. The XPS results show a significant amount of Ce3+ in the layers. The electrical conductivity of as-grown samples is several orders of magnitude higher than that of samples grown from a ceria target. However, the conductivity decreases over time, indicating an oxidation of the layers. The surface morphology of the samples was found to be changing drastically within days, leading to partial delamination.
KW - ceria
KW - metalic cerium target
KW - electrical conductivity
KW - X-ray photoelectron spectroscopy (XPS)
KW - oxidation states
KW - morphology
Y1 - 2024
UR - https://www.dpg-verhandlungen.de/year/2024/conference/berlin/part/ds/session/11/contribution/18
SN - 0420-0195
PB - Deutsche Physikalische Gesellschaft
CY - Bad Honnef
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Bloos, Dominik
A1 - Funk, Hannes Simon
A1 - Oehme, Michael
A1 - Fischer, Gerda
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - van Slageren, Joris
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
T2 - Semiconductor Science and Technology
N2 - Abstract
Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.
KW - two-dimensional hole gas
Y1 - 2024
U6 - https://doi.org/10.1088/1361-6641/ad8d06
SN - 0268-1242
VL - 39
IS - 12
SP - 1
EP - 10
PB - IOP Publishing
ER -
TY - GEN
A1 - Becker, L.
A1 - Storck, Peter
A1 - Liu, Y.
A1 - Schwalb, G.
A1 - Schroeder, Thomas
A1 - Fischer, Inga Anita
A1 - Albrecht, M.
T1 - Optimizing misfit dislocation glide kinetics for enhanced threading dislocation density reduction in Si1− xGex/Si (001) layers through dynamic growth rate control
T2 - Journal of Applied Physics
Y1 - 2024
U6 - https://doi.org/10.1063/5.0204318
SN - 0021-8979
SN - 1089-7550
VL - 135
IS - 20
SP - 10
ER -
TY - GEN
A1 - Berkmann, Fritz
A1 - Povolni, Pavel
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
T1 - Influence of material and geometry parameters on resonance linewidths of plasmonic modes in gratings made from highly doped Ge1−xSnx
T2 - Journal of Physics D: Applied Physics
Y1 - 2024
U6 - https://doi.org/10.1088/1361-6463/ad67ea
VL - 57
IS - 43
SP - 10
ER -
TY - GEN
A1 - Hayat, Ahsan
A1 - Ratzke, Markus
A1 - Alvarado Chavarin, Carlos
A1 - Zöllner, Marvin Hartwig
A1 - Corley-Wiciak, Agnieszka Anna
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Structural and morphological properties of CeO2 films deposited by radio frequency magnetron sputtering for back-end-of-line integration
T2 - Thin Solid Films
Y1 - 2024
U6 - https://doi.org/10.1016/j.tsf.2024.140547
SN - 0040-6090
VL - 807
ER -
TY - GEN
A1 - Reiter, Sebastian
A1 - Sengül, Akant
A1 - Mai, Christian
A1 - Spirito, Davide
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - On-chip refractive index sensors based on plasmonic TiN Nanohole Arrays
T2 - 2024 IEEE Silicon Photonics Conference (SiPhotonics)
Y1 - 2024
SN - 979-8-3503-9404-7
SN - 979-8-3503-9405-4
U6 - https://doi.org/10.1109/SiPhotonics60897.2024.10544048
SN - 1949-209X
ER -
TY - GEN
A1 - Fischer, Inga Anita
T1 - CMOS-compatible metasurfaces integrated with optoelectronic devices: tuning light-matter interaction at the nanoscale
T2 - Technical Digest Series (Optica Publishing Group, 2024), paper SM2L.7
Y1 - 2024
SN - 978-1-957171-39-5
U6 - https://doi.org/10.1364/CLEO_SI.2024.SM2L.7
ER -
TY - GEN
A1 - Jose, Josmy
A1 - Mai, Christian
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Integration concept of plasmonic TiN nanohole arrays in a 200 mm BiCMOS Si technology for refractive index sensor applications
T2 - iCCC2024 - iCampµs Cottbus Conference
Y1 - 2024
U6 - https://doi.org/10.5162/iCCC2024/7.2
SP - 96
EP - 99
ER -
TY - GEN
A1 - Mai, Christian
A1 - Peczek, Anna
A1 - Kroh, Aleksandra
A1 - Jose, Josmy
A1 - Reiter, Sebastian
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Towards a CMOS compatible refractive index sensor: cointegration of TiN nanohole arrays and Ge photodetectors in a 200 mm wafer silicon technology
T2 - Optics Express
N2 - In this work, we present the monolithic integration of a TiN nanohole array and a Ge photodetector towards a CMOS compatible fabrication of a refractive index sensor in a 200 mm wafer silicon technology. We developed a technology process that enables fabrication with high yields of around 90%. Ge photodetectors with a Ge layer thickness of 450 nm and an area of 1600 µm2 (40 µm x 40 µm) show dark current densities of around 129 mA/cm2 and responsivities of 0.114 A/W measured by top illumination (TE polarization; λ = 1310 nm; angle of incidence = 14 °) at a reverse bias of 1 V. Nanohole arrays were structured in a 150 nm thick TiN layer. They were integrated into the back end of line and placed spatially close to the Ge photodetectors. After the metallization, passivation, and pad opening, the nanohole arrays were released with the help of an amorphous silicon stop layer. A significant impact of the TiN nanohole arrays on the optical behavior of the photodetector could be proven on the wafer level. Photocurrent measurements by top illumination confirm a strong dependence of optical properties on the polarization of the incident light and the nanohole array design. We demonstrate very stable photocurrents on the wafer level with a standard deviation of σ < 6%.
KW - plasmonics
KW - sensor
KW - nano hole array
Y1 - 2024
U6 - https://doi.org/10.1364/OE.530081
SN - 1094-4087
VL - 32
IS - 17
SP - 29099
EP - 29111
PB - Optica Publishing Group
ER -
TY - GEN
A1 - Berkmann, Fritz
A1 - Steuer, Oliver
A1 - Ganss, Fabian
A1 - Prucnal, Slawomir
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx
T2 - Optical Materials Express
Y1 - 2023
U6 - https://doi.org/10.1364/OME.479637
SN - 2159-3930
VL - 13
IS - 3
SP - 752
EP - 763
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Oehme, Michael
A1 - Bloos, Dominik
A1 - Berkmann, Fritz
A1 - Seidel, Lukas
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - High mobility Ge 2DHG based MODFETs for low-temperature applications
T2 - Semiconductor Science and Technology
Y1 - 2023
U6 - https://doi.org/10.1088/1361-6641/acb22f
SN - 1361-6641
VL - 38
IS - 3
ER -
TY - GEN
A1 - Reiter, Sebastian
A1 - Han, Weijia
A1 - Mai, Christian
A1 - Spirito, Davide
A1 - Jose, Josmy
A1 - Zöllner, Marvin Hartwig
A1 - Fursenko, Oksana
A1 - Schubert, Markus Andreas
A1 - Stemmler, Ivo
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Titanium Nitride Plasmonic Nanohole Arrays for CMOS-compatible integrated refractive index sensing: influence of layer thickness on optical properties
T2 - Plasmonics
Y1 - 2023
U6 - https://doi.org/10.1007/s11468-023-01810-3
SN - 1557-1963
SP - 1
EP - 13
ER -
TY - GEN
A1 - Schlipf, Jon
A1 - Berkmann, Fritz
A1 - Yamamoto, Yuji
A1 - Reichenbach, Marc
A1 - Veleski, Mitko
A1 - Kawaguchi, Yuma
A1 - Mörz, Florian
A1 - Tomm, Jens W.
A1 - Weißhaupt, David
A1 - Fischer, Inga Anita
T1 - Robust Si/Ge heterostructure metasurfaces as building blocks for wavelength-selective photodetectors
T2 - Applied Physics Letters
Y1 - 2023
U6 - https://doi.org/10.1063/5.0134458
SN - 1077-3118
VL - 122
IS - 12
ER -
TY - GEN
A1 - Han, Weijia
A1 - Reiter, Sebastian
A1 - Schlipf, Jon
A1 - Mai, Christian
A1 - Spirito, Davide
A1 - Jose, Josmy
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Strongly enhanced sensitivities of CMOS compatible plasmonic titanium nitride nanohole arrays for refractive index sensing under oblique incidence
T2 - Optics Express
N2 - Titanium nitride (TiN) is a complementary metal-oxide-semiconductor (CMOS) compatible material with large potential for the fabrication of plasmonic structures suited for device integration. However, the comparatively large optical losses can be detrimental for application. This work reports a CMOS compatible TiN nanohole array (NHA) on top of a multilayer stack for potential use in integrated refractive index sensing with high sensitivities at wavelengths between 800 and 1500 nm. The stack, consisting of the TiN NHA on a silicon dioxide (SiO2) layer with Si as substrate (TiN NHA/SiO2/Si), is prepared using an industrial CMOS compatible process. The TiN NHA/SiO2/Si shows Fano resonances in reflectance spectra under oblique excitation, which are well reproduced by simulation using both finite difference time domain (FDTD) and rigorous coupled-wave analysis (RCWA) methods. The sensitivities derived from spectroscopic characterizations increase with the increasing incident angle and match well with the simulated sensitivities. Our systematic simulation-based investigation of the sensitivity of the TiN NHA/SiO2/Si stack under varied conditions reveals that very large sensitivities up to 2305 nm per refractive index unit (nm RIU−1) are predicted when the refractive index of superstrate is similar to that of the SiO2 layer. We analyze in detail how the interplay between plasmonic and photonic resonances such as surface plasmon polaritons (SPPs), localized surface plasmon resonances (LSPRs), Rayleigh Anomalies (RAs), and photonic microcavity modes (Fabry-Pérot resonances) contributes to this result. This work not only reveals the tunability of TiN nanostructures for plasmonic applications but also paves the way to explore efficient devices for sensing in broad conditions.
KW - TiN
KW - Plasmonics
Y1 - 2023
U6 - https://doi.org/10.1364/OE.481993
SN - 1094-4087
VL - 31
IS - 11
SP - 17389
EP - 17407
ER -
TY - GEN
A1 - Tetzner, Henriette
A1 - Seifert, W.
A1 - Skibitzki, Oliver
A1 - Yamamoto, Yuji
A1 - Lisker, Marco
A1 - Mirza, M. M.
A1 - Fischer, Inga Anita
A1 - Paul, Douglas J.
A1 - De Seta, Monica
A1 - Capellini, Giovanni
T1 - Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)
T2 - Applied Physics Letter
Y1 - 2023
U6 - https://doi.org/10.1063/5.0152962
SN - 1077-3118
VL - 122
IS - 24
ER -
TY - GEN
A1 - Hayat, Ahsan
A1 - Spirito, Davide
A1 - Corley-Wiciak, Agnieszka Anna
A1 - Schubert, Markus Andreas
A1 - Masood, Maria
A1 - Reichmann, Felix
A1 - Ratzke, Markus
A1 - Capellini, Giovanni
A1 - Fischer, Inga Anita
T1 - MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates
T2 - Materials Science in Semiconductor Processing
Y1 - 2023
U6 - https://doi.org/10.1016/j.mssp.2023.107693
SN - 1873-4081
VL - 165
ER -
TY - GEN
A1 - Steuer, O.
A1 - Liedke, Maciej O.
A1 - Butterling, M.
A1 - Schwarz, D.
A1 - Schulze, J.
A1 - Li, Z.
A1 - Wagner, A.
A1 - Fischer, Inga Anita
A1 - Hübner, R.
A1 - Zhou, S.
T1 - Evolution of point defects in pulsed-laser-melted Ge1-xSnx probed by positron annihilation lifetime spectroscopy
T2 - Journal of Physics: Condensed Matter
N2 - Direct-band-gap Germanium-Tin alloys (Ge1-xSnx) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge1-xSnx films treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening – variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge1-xSnx films exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters.
KW - GeSn
KW - laser annealing
KW - positron annihilation
KW - PLM
KW - point defects
Y1 - 2023
UR - https://iopscience.iop.org/article/10.1088/1361-648X/ad0a10/meta
U6 - https://doi.org/10.1088/1361-648X/ad0a10
SN - 0953-8984
VL - 36
IS - 8
SP - 1
EP - 11
ER -
TY - GEN
A1 - Wen, Shuyu
A1 - Shaikh, Mohd Saif
A1 - Steuer, Oliver
A1 - Prucnal, Slawomir
A1 - Grenzer, Jörg
A1 - Hübner, René
A1 - Turek, Marcin
A1 - Pyszniak, Krzysztof
A1 - Reiter, Sebastian
A1 - Fischer, Inga Anita
A1 - Georgiev, Yordan M.
A1 - Helm, Manfred
A1 - Wu, Shaoteng
A1 - Luo, Jun-Wei
A1 - Zhou, Shengqiang
A1 - Berencén, Yonder
T1 - Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques
T2 - Applied Physics Letters
N2 - GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology.
KW - Electric currents
KW - Semiconductors
KW - Photodetectors
KW - C-MOS
KW - Electromagnetic radiation detectors
KW - Crystal structure
KW - Alloys
KW - Ion implantation
KW - Ion beam analysis
Y1 - 2023
UR - https://pubs.aip.org/aip/apl/article/123/8/081109/2907921
U6 - https://doi.org/10.1063/5.0166799
SN - 0003-6951
VL - 123
IS - 8
SP - 1
EP - 7
ER -
TY - GEN
A1 - Kalra, Amanpreet
A1 - Alvarado Chavarin, Carlos
A1 - Nitsch, Paul-Gregor
A1 - Tschammer, Rudi
A1 - Flege, Jan Ingo
A1 - Ratzke, Markus
A1 - Zoellner, Marvin Hartwig
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Deposition of CeOₓ/SnOₓ-based thin films via RF magnetron sputtering for resistive gas sensing applications
T2 - Physica B, Condensed matter
N2 - Cerium oxide-tin oxide (CeOx/SnOx) thin films with varying Sn content were deposited using RF magnetron sputtering and investigated for hydrogen sensing applications. Structural, compositional, and morphological properties were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDX). Gas sensing measurements showed effective hydrogen detection at room temperature, with the sensitivity strongly influenced by Sn content and oxygen vacancy concentration. Higher Sn concentration enhanced the sensing response, which was correlated with microstructural features obtained from AFM and EDX, as well as with the presence of Ce3+ and Ce4+ oxidation states identified by XPS. This study highlights the potential of CeOx/SnOx thin films for possible back-end-of-line integration and provides proof-of-principle for room-temperature hydrogen sensing.
KW - RF magnetron sputtering
KW - CeOx/SnOx thin film
KW - Room temperature
KW - Hydrogen sensing
Y1 - 2026
U6 - https://doi.org/10.1016/j.physb.2025.418098
SN - 0921-4526
VL - 723
SP - 1
EP - 7
PB - Elsevier BV
CY - Amsterdam
ER -
TY - GEN
A1 - Reiter, Sebastian
A1 - Ratzke, Markus
A1 - Nitsch, Paul-Gregor
A1 - Mai, Christian
A1 - Spirito, Davide
A1 - Corley-Wiciak, Agnieszka Anna
A1 - Wenger, Christian
A1 - Fischer, Inga A.
T1 - Optical response of titanium nitride plasmonic nanohole arrays : impact of square and hexagonal array geometry, pitch, and nanohole diameter
T2 - Plasmonics
N2 - Plasmonic nanohole arrays (NHAs) exhibit extraordinary optical transmission (EOT) evoked by resonant excitation of surface plasmons at an excitation wavelength, which is highly sensitive to changes in refractive index in the surrounding dielectric. This can enable the use of plasmonic NHAs in on-chip refractive index sensors. Such sensors can be realized on the cost-effective silicon platform by the integration of a plasmonic NHA and a Ge photodetector, provided that complementary metal–oxide–semiconductor (CMOS)-compatible materials are used for their fabrication. Titanium nitride (TiN) as a biocompatible and CMOS-compatible plasmonic transition metal nitride is well-suited for integration on the silicon platform; however, the comparatively large losses within the material require geometry optimization strategies in order to improve the optical properties of TiN NHAs for sensing. In this work, we investigated different TiN NHA geometries both in experiment and simulation. We extensively characterized square and hexagonal arrays with varying pitches and nanohole diameters and provide a detailed comparison of their optical properties. We also discuss characterization results for surface refractive index changes imposed by depositing a thin Al2O3 layer on top of the NHAs. While we do not observe a clear advantage of hexagonal arrays compared to square arrays for sensing, our results highlight the importance of geometry optimization for TiN NHAs integrated with devices.
KW - Plasmonic nanohole array
KW - Titanium nitride
KW - Hexagonal array
KW - Square array
KW - Nanohole diameters
Y1 - 2025
UR - https://link.springer.com/article/10.1007/s11468-025-02934-4
U6 - https://doi.org/10.1007/s11468-025-02934-4
VL - 20
SP - 8825
EP - 8834
PB - Springer
CY - New York, NY
ER -
TY - GEN
A1 - Schlipf, Jon
A1 - Cutolo, Maria Alessandra
A1 - Manganelli, Costanza Lucia
A1 - Reiter, Sebastian
A1 - Seibold, Götz
A1 - Skibitzki, Oliver
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Fabrication and optical characterization of CMOS-compatible honeycomb-like large-scale lattices of near-field coupled plasmonic TiN nanotriangles
T2 - Advanced optical materials
N2 - Honeycomb-like plasmonic titanium nitride nanotriangle arrays defined by photolithography and fabricated in a modified silicon-germanium electronic–photonic integrated circuit process in a state-of-the-art pilot line. The nanotriangle arrays are characterized in experiments and simulations. The momentum-dependent reflectance spectra exhibit not only features that are consistent with surface lattice resonances in the honeycomb lattice but also minima governed by near-field coupling of the individual nanotriangles. The optical characterization results in combination with simulation-based predictions indicate that such nanotriangle arrays are capable of supporting collective plasmonic resonances that can be described as massless Dirac particles. The fabrication approach opens up the possibility of integrating the structures into device fabrication processes, and avenues toward near-infrared sensing and communication applications are predicted.
KW - Plasmonic Nanostructures
KW - Optics of Nanostructures
Y1 - 2025
UR - https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adom.202403408
U6 - https://doi.org/10.1002/adom.202403408
SN - 2195-1071
VL - 2025
SP - 1
EP - 8
PB - Wiley-VCH
CY - Weinheim
ER -