TY - GEN A1 - Tönnies, Karen A1 - Schmid, Reiner P. A1 - Weickhardt, Christian A1 - Reif, Jürgen A1 - Grotemeyer, J. T1 - Multiphoton ionization of nitrotoluenes by means of ultrashort laser pulses T2 - International Journal of Mass Spectrometry Y1 - 2001 UR - http://www.sciencedirect.com/science/article/pii/S1387380600003742 SN - 1387-3806 VL - 206 IS - 3 SP - 245 EP - 250 ER - TY - GEN A1 - Schneider, Thomas A1 - Reif, Jürgen T1 - Influence of an ultrafast refractive index grating on nonlinear optical phenomena T2 - Physical Review A Y1 - 2002 SN - 1094-1622 VL - 65 IS - 2 SP - 023801 ER - TY - THES A1 - Henyk, Matthias T1 - Partikelemission bei der Ablation dielektrischer Materialien mit ultrakurzen Laserpulsen KW - Laserablation KW - dielektrische Kristalle KW - Laserpulse Y1 - 2003 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-000000371 ER - TY - JOUR A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Yu, Xuegong A1 - Reiche, Manfred T1 - Silicon-based light emitters for on-chip optical interconnects Y1 - 2005 ER - TY - GEN A1 - Kappa, Mathias A1 - Ratzke, Markus A1 - Reif, Jürgen T1 - Pulsed laser deposition of hafnium oxide on silicon Y1 - 2005 ER - TY - CHAP A1 - Costache, Florenta Adriana A1 - Toma, O. A1 - Totia, H. T1 - Transient processes in laser-solid interaction characterized by the induced thermo-electrical current variation T2 - ROMOPTO 2000, Sixth Conference in Optics, 4 - 7 September 2000, Bucharest, Romania Y1 - 2001 SN - 0-8194-4141-4 SP - 108 EP - 113 PB - SPIE CY - Bellingham, Wash. ER - TY - CHAP A1 - Schmid, Reiner P. A1 - Schneider, Thomas A1 - Reif, Jürgen ED - Chen, K. ED - Rodwell, Mark ED - Knox, Wayne T1 - Ultrafast Transient Grating in Barium Fluoride Efficient Instantaneous Optical Switching, Frequency Conversion and Simple Logic Operations on a Femtosecond Time Scale T2 - Ultrafast electronics and optoelectronics, January 10 - 12, 2001, Lake Tahoe, Nevada, proceedings volume Y1 - 2001 SN - 1-55752-606-0 SP - 111 EP - 112 PB - OSA CY - Washington, DC ER - TY - CHAP A1 - Reif, Jürgen A1 - Costache, Florenta Adriana ED - Scully, M. O. T1 - Femtosecond laser interaction with solid surfaces: Explosive ablation and self-assembly of ordered nanostructures T2 - Advances in Atomic, Molecular, and Optical Physics KW - femtosecond laser desorption KW - time-of-flight mass spectrometry KW - ion emission KW - nanostructures Y1 - 2006 SN - 0-12-003853-6 SP - 228 EP - 249 PB - Academic Press CY - San Diego [u.a.] ER - TY - GEN A1 - Varlamova, Olga A1 - Costache, Florenta Adriana A1 - Reif, Jürgen A1 - Bestehorn, Michael T1 - Self-organized pattern formation upon femtosecond laser ablation by circularly polarized light T2 - Applied Surface Science KW - femtosecond laser ablation KW - nanostructures KW - self-organization Y1 - 2006 SN - 0169-4332 VL - 252 IS - 13 SP - 4702 EP - 4706 ER - TY - GEN A1 - Reif, Jürgen A1 - Costache, Florenta Adriana A1 - Eckert, Sebastian T1 - The role of energy and phase relaxation (T1 and T2) in ultrafast laser ablation KW - Femtosecond laser desorption KW - Time-of-flight mass spectrometry KW - Temporal dynamics Y1 - 2007 ER - TY - JOUR A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Yu, Xuegong T1 - Silicon-based light emitters Y1 - 2006 ER - TY - GEN A1 - Ratzke, Markus A1 - Wolfframm, Dirk A1 - Kappa, Mathias A1 - Kouteva-Arguirova, Simona A1 - Reif, Jürgen T1 - Pulsed laser deposition of HfO2 and Pr(x)O(y) high-k films on Si(100) T2 - Applied Surface Science Y1 - 2005 SN - 0169-4332 VL - 247 IS - 1-4 SP - 128 EP - 133 ER - TY - CHAP A1 - Reif, Jürgen A1 - Costache, Florenta Adriana T1 - Self-organized surface nanostructuring by femtosecond laser processing KW - femtosecond laser ablation KW - nanostructures KW - self-organization Y1 - 2006 ER - TY - JOUR A1 - Kittler, Martin A1 - Yu, Xuegong A1 - Vyvenko, Oleg F. A1 - Birkholz, Mario A1 - Seifert, Winfried A1 - Reiche, Manfred A1 - Wilhelm, T. A1 - Arguirov, Tzanimir V. A1 - Wolff, A. A1 - Fritzsche, W. A1 - Seibt, M. T1 - Self-organized pattern formation of biomolecules at Si surfaces: Intended application of a dislocation network Y1 - 2006 ER - TY - THES A1 - Costache, Florenta Adriana T1 - Dynamics of ultra-short laser pulse interaction with solids at the origin of nanoscale surface modification KW - Ultrakurzer Lichtimpuls KW - Nanostruktur KW - Oberflächenstruktur Y1 - 2007 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-3674 UR - http://opus.kobv.de/btu/volltexte/2007/367/ ER - TY - THES A1 - Fahr, Martin T1 - Parasitäre Wärmeflüsse und Verunreinigungen in Reinstmetall-Fixpunktzellen der Internationalen Temperaturskala KW - Metall KW - Verunreinigung KW - Wärmestrom KW - Internationale Temperaturskala Y1 - 2008 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-4639 UR - http://opus.kobv.de/btu/volltexte/2008/463/ ER - TY - THES A1 - Arguirov, Tzanimir V. T1 - Electro-optical properties of dislocations in silicon and their possible application for light emitters KW - Silicium KW - Versetzung KW - Lumineszenz Y1 - 2008 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-5837 UR - http://opus.kobv.de/btu/volltexte/2008/583/ ER - TY - GEN A1 - Kittler, Martin A1 - Yu, Xuegong A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Vyvenko, Oleg F. A1 - Seifert, Winfried A1 - Reiche, Manfred A1 - Wilhelm, T. A1 - Seibt, M. A1 - Voss, O. A1 - Wolff, A. A1 - Fritzsche, W. T1 - Regular dislocation networks in silicon as a tool for nanostructures devices used in optics, biology and electronics Y1 - 2007 ER - TY - CHAP A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Costina, Ioan A1 - Lupina, Grzegorz A1 - Ratzke, Markus A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Morphology and Composition of Praseodymium Based High-k Materials and Their Relevance to Dielectric Properties of Thin-Films Y1 - 2007 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Hoang, T. A1 - Hollemann, J. A1 - Schmitz, J. T1 - Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect Y1 - 2007 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Rölver, R. A1 - Berghoff, B. A1 - Först, M. A1 - Spangenberg, B. T1 - Structural and optical properties of Si/SiO2 multi-quantum wells Y1 - 2007 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Jia, G. A1 - Kittler, Martin T1 - Signatures of distinct structures related to rod-like defects in silicon detected by various measurement methods Y1 - 2007 ER - TY - JOUR A1 - Arguirov, Tzanimir V. A1 - Mtchedlidze, T. A1 - Kittler, Martin A1 - Rölver, R. A1 - Berghoff, B. A1 - Först, M. A1 - Spangenberg, B. T1 - Residual stress in Si nanocrystals embedded in a SiO2 matrix Y1 - 2006 ER - TY - JOUR A1 - Costache, Florenta Adriana A1 - Eckert, S. A1 - Reif, Jürgen T1 - Near-damage threshold femtosecond laser irradiation of dielectric surfaces: desorbed ion kinetics and defect dynamics Y1 - 2008 ER - TY - JOUR A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Mtchedlidze, T. A1 - Seifert, Winfried A1 - Vyvenko, Oleg F. A1 - Wilhelm, T. A1 - Yu, Xuegong T1 - Dislocations in silicon as a tool to be used in optics, electronics and biology Y1 - 2008 ER - TY - GEN A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Hoang, T. A1 - Hollemann, J. A1 - LeMinh, P. A1 - Schmitz, J. T1 - Engineering of dislocation loops for light emission from silicon diodes T2 - Solid State Phenomena Y1 - 2008 SN - 1012-0394 VL - 131/133 SP - 303 EP - 308 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kouteva-Arguirova, Simona A1 - Jia, G. A1 - Kittler, Martin A1 - Rölver, R. A1 - Berghoff, B. A1 - Först, M. A1 - Batzner, D. L. A1 - Spangenberg, B. T1 - Influence of a substrate, structure and annealing procedures on crystalline and optical properties of Si/SiO2 multiple quantum wells Y1 - 2008 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kouteva-Arguirova, Simona A1 - Kittler, Martin A1 - Rölver, R. A1 - Berghoff, B. A1 - Batzner, D. L. A1 - Spangenberg, B. T1 - Light-induced solid-to-solid phase transformation in Si nanolayers of Si.SiO2 multiple quantum wells JF - Physical Review B Y1 - 2008 SN - 1098-0121 VL - 77 IS - 16 SP - 161304 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Wilhelm, T. A1 - Yu, Xuegong A1 - Arguirov, Tzanimir V. A1 - Jia, G. A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Regular dislocation networks in Si. Part II: Lunimescence JF - Solid State Phenomena Y1 - 2008 SN - 1012-0394 VL - 131/133 SP - 503 EP - 510 ER - TY - JOUR A1 - Reif, Jürgen A1 - Craciun, Valentin A1 - Lippert, Th. A1 - Perriere, Jacques T1 - Guest Editors Preface JF - Applied Surface Science Y1 - 2006 SN - 0169-4332 VL - 252 IS - 13 ER - TY - GEN A1 - Hoang, T. A1 - Hollemann, J. A1 - LeMinh, P. A1 - Schmitz, J. A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin T1 - Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes T2 - IEEE transactions on electron devices Y1 - 2007 SN - 0018-9383 VL - 54 IS - 8 SP - 1860 EP - 1866 ER - TY - GEN A1 - Varlamova, Olga A1 - Ratzke, Markus A1 - Reif, Jürgen T1 - Feedback Effect on the Self-Organized Nanostructures Formation on Silicon upon Femtosecond Laser Ablation T2 - Solid State Phenomena Y1 - 2009 SN - 1012-0394 VL - 156/158 SP - 535 EP - 540 ER - TY - JOUR A1 - Reif, Jürgen A1 - Varlamova, Olga A1 - Costache, Florenta Adriana T1 - Femtosecond laser induced nanostructure formation: self organization control parameters Y1 - 2008 ER - TY - CHAP A1 - Reif, Jürgen T1 - Processing with Ultrashort Laser Pulses Y1 - 2010 ER - TY - GEN A1 - Reif, Jürgen A1 - Varlamova, Olga A1 - Ratzke, Markus A1 - Schade, Martin A1 - Leipner, Hartmut S. A1 - Arguirov, Tzanimir V. T1 - Multipulse feedback in self-organized ripples formation upon femtosecond laser ablation from silicon T2 - Applied Physics A Y1 - 2010 U6 - https://doi.org/10.1007/s00339-010-5830-x SN - 0947-8396 VL - 101 IS - 2 SP - 361 EP - 365 ER - TY - JOUR A1 - Ratzke, Markus A1 - Yang, B. A1 - Reif, Jürgen T1 - Fixed charge densitiy distribution on pulsed laser deposited high-k oxide layers Y1 - 2008 ER - TY - JOUR A1 - Ratzke, Markus A1 - Yu, Xuegong A1 - Vyvenko, Oleg F. A1 - Reif, Jürgen A1 - Kittler, Martin A1 - Reiche, Manfred T1 - Scanning Probe studies of the electrical activity at interfaces formed by silicon wafer direct bonding JF - Physica Status Solidi C Y1 - 2007 SN - 1610-1634 VL - 4 IS - 8 SP - 2893 EP - 3897 ER - TY - JOUR A1 - Ratzke, Markus A1 - Reif, Jürgen T1 - On the reliability of scanning probe based electrostatic force measurements Y1 - 2007 ER - TY - JOUR A1 - Varlamova, Olga A1 - Costache, Florenta Adriana A1 - Ratzke, Markus A1 - Reif, Jürgen T1 - Control parameters in pattern formation upon femtosecond laser ablation Y1 - 2007 ER - TY - JOUR A1 - Yu, Xuegong A1 - Vyvenko, Oleg F. A1 - Seifert, Winfried A1 - Arguirov, Tzanimir V. A1 - Wilhelm, T. A1 - Reiche, Manfred T1 - Luminescence of dislocation network in directly bonded silicon wafers Y1 - 2007 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Kittler, Martin T1 - Involvement of iron-phosphorus complexes in iron gettering for n-type silicon Y1 - 2006 ER - TY - JOUR A1 - Orlov, V. I. A1 - Iunin, Yu. L. A1 - Badylevich, M. V. A1 - Lysytskiy, O. A1 - Richter, H. T1 - Influence of nitrogen on dislocation mobility in Czochralski silicon JF - Solid State Phenomena Y1 - 2004 SN - 1012-0394 N1 - Proceedings of the GADEST 2003 VL - 95-96 SP - 465 EP - 469 ER - TY - CHAP A1 - Ratzke, Markus A1 - Kappa, Mathias A1 - Wolfframm, Dirk A1 - Kouteva-Arguirova, Simona A1 - Reif, Jürgen T1 - PLD of high-k dielectric films on silicon T2 - Fifth International Symposium on Laser Precision Microfabrication, 11 - 14 May 2004, Nara, Japan Y1 - 2004 SN - 0-8194-5623-3 SP - 406 EP - 411 PB - SPIE CY - Bellingham, Wash. ER - TY - GEN A1 - Ratzke, Markus A1 - Wolfframm, Dirk A1 - Arguirov, Tzanimir V. A1 - Kappa, Mathias A1 - Reif, Jürgen T1 - Pulsed laser deposition of Praseodymium Oxide films on Silicon (100) T2 - Applied Physics / A Y1 - 2004 SN - 0947-8396 SN - 1432-0630 VL - 79 IS - 4-6 SP - 1247 EP - 1249 ER - TY - JOUR A1 - Wolfframm, Dirk A1 - Ratzke, Markus A1 - Kappa, Mathias A1 - Montenegro, M. J. A1 - Döbeli, M. A1 - Lippert, Th. A1 - Reif, Jürgen T1 - Pulsed Laser Deposition of Thin PrxOx Films on Si(100) JF - Materials Science and Engineering B Y1 - 2004 SN - 0921-5107 VL - 109 IS - 1-3 SP - 24 EP - 29 ER - TY - JOUR A1 - Juodkazis, Saulius A1 - Gaizauskas, Eugenijus A1 - Jarutis, Vygandas A1 - Reif, Jürgen A1 - Matsuo, Shigeki A1 - Misawa, Hiroaki T1 - Optical third harmonic generation during femtosecond pulse diffraction in a Bragg grating Y1 - 2005 ER - TY - GEN A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Fischer, A. A1 - Seifert, Winfried T1 - Silicon-based Light Emission after Ion Implantation Y1 - 2005 ER - TY - GEN A1 - Kouteva-Arguirova, Simona A1 - Arguirov, Tzanimir V. A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Influence of Local Heating on Micro-Raman Spectroscopy of Silicon T2 - Journal of Applied Physics Y1 - 2003 SN - 1089-7550 VL - 94 SP - 4946 ER - TY - JOUR A1 - Akhmetov, V. D. A1 - Richter, H. A1 - Seifert, Winfried A1 - Lysytskiy, O. A1 - Wahlich, R. A1 - Müller, T. A1 - Reiche, Manfred T1 - Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers JF - European Physics Journal of Applied Physics Y1 - 2004 SN - 1286-0042 SN - 1286-0050 VL - 27 IS - 1-3 SP - 159 EP - 161 ER - TY - JOUR A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Reif, Jürgen A1 - Bolze, D. A1 - Ehwald, K.-E. A1 - Formanek, Peter T1 - Luminescence of Crystal Defects Formed after Annealing of Phosphorus Implanted Silicon JF - Solid State Phenomena Y1 - 2004 SN - 1012-0394 N1 - Proceedings of the GADEST 2003 VL - 95-96 SP - 289 EP - 296 ER - TY - JOUR A1 - Costache, Florenta Adriana A1 - Kouteva-Arguirova, Simona A1 - Reif, Jürgen T1 - Self-Assembled Surface Patterning and Structural Modification upon Femtosecond Laser Processing of Crystalline Silicon Y1 - 2004 ER - TY - JOUR A1 - Costache, Florenta Adriana A1 - Reif, Jürgen T1 - Femtosecond Laser Induced Coulomb Explosion from Calcium Fluoride JF - Thin Solid Films Y1 - 2004 U6 - https://doi.org/10.1016/j.tsf.2003.11.096 SN - 0040-6090 VL - 453-454 SP - 334 EP - 339 ER - TY - GEN A1 - Schmid, Reiner P. A1 - Mankovics, Daniel A1 - Arguirov, Tzanimir V. A1 - Ratzke, Markus A1 - Mtchedlidze, T. A1 - Kittler, Martin T1 - Rapid dislocation-related D1-photoluminescence imaging of multicrystalline Si wafers at room temperature T2 - Physica Status Solidi : A Y1 - 2011 U6 - https://doi.org/10.1002/pssa.201026269 SN - 1610-1642 VL - 208 IS - 4 SP - 888 EP - 892 ER - TY - GEN A1 - Klossek, Andre A1 - Mankovics, Daniel A1 - Arguirov, Tzanimir V. A1 - Ratzke, Markus A1 - Kirner, Simon A1 - Friedrich, Felice A1 - Gabriel, Onno A1 - Stannowski, Bernd A1 - Schlatmann, Rutger A1 - Kittler, Martin T1 - Growth process of microcrystalline silicon studied by combined photoluminsescence and Raman investigations T2 - Journal of applied physics Y1 - 2013 U6 - https://doi.org/10.1063/1.4838058 SN - 1520-8850 VL - 114 SP - 223511 ER - TY - GEN A1 - Reif, Jürgen A1 - Varlamova, Olga A1 - Ratzke, Markus A1 - Uhlig, Sebastian T1 - Laser-Induced Periodic Surface Structures of Thin Complex Multi-Component Films T2 - Applied Physics / A Y1 - 2016 U6 - https://doi.org/10.1007/s00339-016-9936-7 SN - 1432-0630 N1 - Art. 338 VL - 122 IS - 4 SP - 1 EP - 6 ER - TY - GEN A1 - Reif, Jürgen A1 - Martens, Christian A1 - Uhlig, Sebastian A1 - Ratzke, Markus A1 - Varlamova, Olga A1 - Valette, Stephane A1 - Benayoun, Stephane T1 - On large area LIPSS coverage by multiple pulses T2 - Applied Surface Science Y1 - 2015 U6 - https://doi.org/doi:10.1016/j.apsusc.2014.11.153 SN - 0169-4332 VL - 336 SP - 249 EP - 254 ER - TY - CHAP A1 - Varlamova, Olga A1 - Reif, Jürgen A1 - Varlamov, Sergej A1 - Bestehorn, Michael ED - Sakabe, Shuji ED - Lienau, Christoph ED - Grunwald, Rüdiger T1 - Self-organized Surface Patterns Originatin from Laser-Induced Instability T2 - Progress in nonlinear nano-optics Y1 - 2015 SN - 978-3-319-12216-8 SN - 3-319-12216-9 SP - 3 EP - 29 PB - Springer CY - Cham [u.a.] ER - TY - GEN A1 - Phipps, Claude R. A1 - Zhigilei, Leonid A1 - Polynkin, Pavel A1 - Baumert, Thomas A1 - Sarnet, Thierry A1 - Bulgakowa, Nadezhda A1 - Bohn, Willy A1 - Reif, Jürgen T1 - Laser interaction with material: introduction T2 - Applied Optics N2 - editorial of special issue Y1 - 2014 SN - 0003-6935 VL - 53 IS - 31 SP - LIM1 EP - LIM3 ER - TY - GEN A1 - Phipps, Claude R. A1 - Zhigilei, Leonid A1 - Polynkin, Pavel A1 - Baumert, Thomas A1 - Sarnet, Thierry A1 - Bulgakowa, Nadezhda A1 - Bohn, Willy A1 - Reif, Jürgen T1 - Laser interaction with material: introduction T2 - Journal of the Optical Society of America / B Y1 - 2014 SN - 1520-8540 SN - 0740-3224 N1 - Editorial of special issue VL - 31 IS - 11 SP - LIM1 EP - LIM3 ER - TY - CHAP A1 - Reif, Jürgen T1 - Grundlagen der Laser-Material-Wechselwirkung T2 - Dossier: Laser in neuen Anwendungen Y1 - 1998 SP - 43 PB - Spektrum-der-Wissenschaft-Verlagsges. CY - Heidelberg ER - TY - GEN A1 - Petzoldt, Steffen A1 - Reif, Jürgen A1 - Matthias, E. T1 - Laser plasma threshold of metals T2 - Applied Surface Science Y1 - 1996 SN - 0169-4332 VL - 96/98 SP - 199 EP - 204 ER - TY - THES A1 - Mai, Andreas T1 - Integration von LDMOS-Transistoren für Hochfrequenzanwendungen in eine 0.13 µm-SiGe:C-BiCMOS Technologie Y1 - 2010 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-20740 ER - TY - THES A1 - Ohlerich, Martin T1 - Investigations of the Physics Potential and Detector Development for the ILC Y1 - 2010 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-14409 ER - TY - THES A1 - Lublow, Michael T1 - Surface Analytical Characterization of Horizontal and Vertical Nanotopographies at the Silicon/Silicon Oxide/Electrolyte Phase Boundaries Y1 - 2009 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-14390 ER - TY - THES A1 - Krüger, Jörg T1 - Ultrakurze Laserimpulse in der Mikromaterialbearbeitung Y1 - 2000 SN - 3-89825-034-2 PB - dissertation.de CY - Berlin ER - TY - GEN A1 - Costache, Florenta Adriana A1 - Eckert, Sebastian A1 - Reif, Jürgen T1 - Dynamics of laser induced desorption from dielectric surfaces on a sub-picosecond timescale T2 - Applied Surface Science Y1 - 2006 SN - 0169-4332 VL - 252 IS - 13 SP - 4416 EP - 4419 ER - TY - GEN A1 - Varlamova, Olga A1 - Costache, Florenta Adriana A1 - Reif, Jürgen A1 - Bestehorn, Michael T1 - Self-organized pattern formation upon femtosecond laser ablation by circular polarized light T2 - Applied Surface Science Y1 - 2006 SN - 0169-4332 VL - 252 IS - 13 SP - 4702 EP - 4706 ER - TY - GEN A1 - Kouteva-Arguirova, Simona A1 - Orlov, Valeri A1 - Seifert, Winfried A1 - Richter, Hans A1 - Reif, Jürgen T1 - Residual stress distribution and silicon phase transformation induced by Rockwell indentation at different temperatures, studied by means of micro-Raman spectroscopy T2 - Solid State Phenomena Y1 - 2004 SN - 1662-9779 SN - 0377-6883 VL - 95-96 SP - 513 EP - 518 ER - TY - GEN A1 - Müller, K. A1 - Goryachko, Andriy A1 - Burkov, Yevgen A1 - Schwiertz, Carola A1 - Ratzke, Markus A1 - Köble, J. A1 - Reif, Jürgen A1 - Schmeißer, Dieter T1 - Scanning Kelvin probe and photoemission electron microscopy of organic source-drain structures T2 - Synthetic Metals Y1 - 2004 VL - 146 IS - 3 SP - 377 EP - 382 ER - TY - GEN A1 - Wolfframm, Dirk A1 - Kouteva-Arguirova, Simona A1 - Arguirov, Tzanimir V. A1 - Schmid, Reiner P. A1 - Dittmar, K. A1 - Zienert, I. A1 - Reif, Jürgen T1 - Hafnium oxide on silicon: A non-destructive characterization of the interfacial layer T2 - Solid State Phenomena Y1 - 2004 UR - http://www.scientific.net/SSP.95-96.653.pdf SN - 1662-9779 SN - 0377-6883 VL - 95-96 SP - 653 EP - 658 ER - TY - GEN A1 - Costache, Florenta Adriana A1 - Henyk, Matthias A1 - Reif, Jürgen T1 - Surface patterning on insulators upon femtosecond laser ablation T2 - Applied Surface Science Y1 - 2003 SN - 0169-4332 VL - 208/209 SP - 486 EP - 491 ER - TY - CHAP A1 - Reif, Jürgen ED - Castillejo, Marta ED - Ossi, Paolo M. ED - Zhigilei, Leonid T1 - Material Response to Laser Energy Deposition (Thermal and Hyperthermal Processes) T2 - Lasers in Material Science Y1 - 2014 SN - 978-331-90289-7-2 SN - 978-3-319-02898-9 SP - 29 EP - 41 PB - Springer CY - Berlin [u.a.] ER - TY - GEN A1 - Varlamova, Olga A1 - Martens, Christian A1 - Ratzke, Markus A1 - Reif, Jürgen T1 - Genesis of femtosecond-induced nanostructures on solid surfaces T2 - Applied Optics Y1 - 2014 SN - 1539-4522 SN - 0003-6935 VL - 53 IS - 31 SP - I10 EP - I15 ER - TY - GEN A1 - Varlamova, Olga A1 - Reif, Jürgen T1 - Evolution of Femtosecond Laser Induced Surface Structures at Low Number of Pulses near the Ablation Threshold T2 - Journal of Laser Micro/Nanoengineering Y1 - 2013 SN - 1880-0688 VL - 8 IS - 3 SP - S. 300 ER - TY - GEN A1 - Reif, Jürgen A1 - Varlamova, Olga A1 - Bounhalli, Mourad A1 - Muth, Marco A1 - Arguirov, Tzanimir V. T1 - Nanostructure formation upon femtosecond ablation from silicon: Effect of double pulses T2 - Applied Surface Science Y1 - 2012 SN - 0169-4332 VL - 258 IS - 23 SP - 9491 EP - 9495 ER - TY - THES A1 - Schmidtbauer, Jan T1 - MBE Growth and Characterization of Germanium Nanowires Y1 - 2012 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-28660 ER - TY - THES A1 - Ratzke, Markus T1 - Kraftmikroskopie als Werkzeug zur Charakterisierung elektrischer Oberflächeneigenschaften Y1 - 2012 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-24440 ER - TY - THES A1 - Jia, Guobin T1 - Characterization of electrical and optical properties of silicon based materials Y1 - 2009 ER - TY - THES A1 - Wiatrek, Andrzej T1 - Untersuchung der Eigenschaften der gesättigten stimulierten Brillouin-Streuung und ihrer Anwendeungsmöglichkeiten Y1 - 2013 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-29577 ER - TY - THES A1 - Hartmann, Carsten T1 - Aluminiumnitrid-Volumenkristallzüchtung mittels physikalischen Gasphasentransports Y1 - 2013 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-28992 ER - TY - GEN A1 - Henyk, Matthias A1 - Costache, Florenta Adriana A1 - Reif, Jürgen T1 - Ultra short laser pulse ablation from sodium chloride - the role of laser induced color centers T2 - Applied Surface Science Y1 - 2002 SN - 0169-4332 VL - 197-198 SP - 90 EP - 95 ER - TY - GEN A1 - Reif, Jürgen A1 - Costache, Florenta Adriana A1 - Henyk, Matthias A1 - Pandelov, Stanislaw T1 - Ripples Revisited: Non-Classical Morphology at the Bottom of Femtosecond Laser Ablation Craters in Transparent Dielectrics T2 - Applied surface science Y1 - 2002 SN - 0169-4332 VL - Vol. 197–198 SP - 891 EP - 895 ER - TY - GEN A1 - Wolfframm, Dirk A1 - Ratzke, Markus A1 - Kouteva-Arguirova, Simona A1 - Reif, Jürgen T1 - Praseodymium Oxide growth on Si(100) by pulsed laser deposition T2 - Materials Science and Semiconductor Processing Y1 - 2002 SN - 1369-8001 VL - 5 IS - 4-5 SP - 429 EP - 434 ER - TY - GEN A1 - Orlov, Valeri A1 - Richter, Hans A1 - Fischer, A. A1 - Reif, Jürgen A1 - Müller, T. A1 - Wahlich, R. T1 - Mechanical Properties of nitrogen-doped CZ silicon crystals T2 - Materials Science in Semiconductor Processing 5 Y1 - 2002 SN - 1369-8001 VL - 5 IS - 4-5 SP - 403 EP - 407 ER - TY - GEN A1 - Costache, Florenta Adriana A1 - Henyk, Matthias A1 - Reif, Jürgen T1 - Modification of Dielectric Surfaces with Ultra-Short Laser Pulses T2 - Applied Surface Science Y1 - 2002 SN - 0169-4332 VL - 186 IS - 1-4 SP - 352 EP - 357 ER - TY - GEN A1 - Kouteva-Arguirova, Simona A1 - Seifert, Winfried A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Raman Measurement of Stress Distribution in Multicrystalline Silicon Materials T2 - Materials Science and Engineering B Y1 - 2003 SN - 0921-5107 VL - 102 IS - 1/3 SP - 37 EP - 42 ER - TY - GEN A1 - Reif, Jürgen A1 - Schmid, Reiner P. A1 - Schneider, Thomas T1 - Femtosecond Third Harmonic Generation: Self Phase Matching through a Transient Kerr Grating and the Way to Ultrafast Computing T2 - Applied Physics B Y1 - 2002 U6 - https://doi.org/10.1007/s003400200847 SN - 0946-2171 SN - 1432-0649 VL - 74 IS - 7 SP - 745 EP - 748 ER - TY - GEN A1 - Henyk, Matthias A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Ultrafast laser desorption from transparent insulators T2 - Nuclear Instruments and Methods in Physic Research B Y1 - 2000 SN - 0168-583x VL - 166/167 SP - 716 EP - 721 ER - TY - GEN A1 - Henyk, Matthias A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Ultra short laser pulse induced charged particle emission from wide bandgap crystals T2 - Applied Surface Science Y1 - 2000 SN - 0169-4332 VL - 168 IS - 1/4 SP - 263 EP - 266 ER - TY - GEN A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Mitzner, Rolf A1 - Reif, Jürgen T1 - Ultrafast optical switching by instantaneous laser-induced grating formation and self-diffraction in barium flouride T2 - Applied Physics B Y1 - 1999 SN - 0946-2171 VL - 68 IS - 4 SP - 749 EP - 751 ER - TY - GEN A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Ultrafast optical switching by instantaneous laser-induced grating formation and self-diffraction in barium flouride T2 - Physica status solidi (a) Y1 - 1999 SN - 0031-8965 SN - 1862-6300 VL - 175 IS - 1 SP - 177 EP - 182 ER - TY - GEN A1 - Henyk, Matthias A1 - Vogel, N. A1 - Wolfframm, Dirk A1 - Tempel, A. A1 - Reif, Jürgen T1 - Femtosecond Laser Ablation from Dielectric Materials: Comparison to Arc Discharge Erosion T2 - Applied Physics A Y1 - 1999 SN - 0947-8396 VL - 69 IS - Suppl. 1 SP - 355 EP - 358 ER - TY - GEN A1 - Henyk, Matthias A1 - Costache, Florenta Adriana A1 - Reif, Jürgen T1 - Femtosecond Laser Ablation from Sodium Chloride and Barium Fluoride T2 - Applied Surface Science Y1 - 2002 SN - 0169-4332 VL - 186 IS - 1-4 SP - 381 EP - 384 ER - TY - GEN A1 - Schmid, Reiner P. A1 - Schneider, Thomas A1 - Reif, Jürgen T1 - Femtosecond All-optical Wavelength and Time Demultiplexer for OTDM/WDM Systems T2 - Applied Physics B Y1 - 2002 UR - http://link.springer.com/article/10.1007/s00340-002-0876-x U6 - https://doi.org/10.1007/s00340-002-0876-x SN - 0946-2171 SN - 1432-0649 VL - 74 IS - Suppl. 1 SP - 205 EP - 208 ER - TY - GEN A1 - Reif, Jürgen A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Schmid, Reiner P. T1 - Femtosecond nonlinear optical characterization of silicon wafers: the role of symmetry T2 - Materials Science in Semiconductor Processing Y1 - 2001 SN - 1369-8001 VL - 4 IS - 1-3 SP - 241 EP - 243 ER - TY - GEN A1 - Reif, Jürgen A1 - Schmid, Reiner P. A1 - Schneider, Thomas A1 - Wolfframm, Dirk T1 - Nonlinear Characterization of the Surface of Silicon Wafers: In-situ Detection of External Stress T2 - Solid State Electronics 44 Y1 - 2000 SN - 0038-1101 VL - 44 IS - 5 SP - 809 EP - 813 ER - TY - GEN A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Mitzner, Rolf A1 - Reif, Jürgen T1 - Femtosecond Index Grating in Barium Fluoride: Efficient Self Diffraction and Enhancement of Surface SHG T2 - Applied Surface Science Y1 - 2000 SN - 0169-4332 VL - 154-155 SP - 565 EP - 570 ER - TY - GEN A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Ultrafast laser-induced index grating in transparent insulators T2 - Nuclear Instruments and Methods B Y1 - 2000 SN - 0168-583x VL - 166-167 SP - 809 EP - 814 ER - TY - GEN A1 - Gregorcic, Peter A1 - Sedlacek, Marko A1 - Podgornik, Bojan A1 - Reif, Jürgen T1 - Formation of laser-induced periodic surface structures (LIPPS) on tool steel by multiple picosecond laser pulses of different polarizations T2 - Applied Surface Science Y1 - 2016 SN - 0169-4332 VL - 387 SP - 698 EP - 706 ER - TY - GEN A1 - Reif, Jürgen A1 - Varlamova, Olga A1 - Uhlig, Sebastian A1 - Varlamov, Sergej A1 - Bestehorn, Michael T1 - On the physics of self-organized nanostructure formation upon femtosecond laser ablation T2 - Applied Physics A N2 - We present new results on femtosecond LIPSS on silicon, fostering the dynamic model of self-organized structure formation. The first set of experiments demonstrates LIPSS formation by irradiation with a femtosecond white light continuum. The ripples are, as usual, perpendicular to the light polarization with a fluence-dependent wavelength between 500 and 700 nm. At higher dose (fluence × number of shots), the LIPSS turn to much coarser structures. The second set of experiments displays the dose dependence of pattern evolution at about threshold fluence. In contrast to the general case of multi-pulse LIPSS, where a strong dependence of the structures on the laser polarization is observed, single-shot exposition of silicon at about the ablation threshold results in a concentric pattern of very regular sub-wavelength ripples following the oval shape of the irradiated spot, without any reference to the laser polarization. When increasing the number of pulses, the usual, typical ripples develop and then coalesce into broader perpendicular structures, interlaced with remnants of the first, finer ripples. Y1 - 2014 UR - http://link.springer.com/article/10.1007/s00339-014-8339-x U6 - https://doi.org/10.1007/s00339-014-8339-x SN - 0947-8396 SN - 1432-0630 VL - 117 IS - 1 SP - 179 EP - 184 ER - TY - CHAP A1 - Reif, Jürgen ED - Ossi, Paolo M. T1 - Surface Functionalization by Laser-Induced Structuring T2 - Advances in the Application of Lasers in Materials Science Y1 - 2018 SN - 978-3-319-96844-5 U6 - https://doi.org/10.1007/978-3-319-96845-2_3 SP - 63 EP - 88 PB - Springer CY - Cham ER - TY - GEN A1 - Varlamova, Olga A1 - Hoefner, Kevin A1 - Ratzke, Markus A1 - Reif, Jürgen A1 - Sarker, Debasish T1 - Modification of surface properties of solids by femtosecond LIPSS writing: comparative studies on silicon and stainless steel T2 - Applied Physics A Y1 - 2017 U6 - https://doi.org/10.1007/s00339-017-1362-y SN - 0947-8396 SN - 1432-0630 VL - 123 IS - 12 ER - TY - GEN A1 - Czajkowski, Klaus A1 - Ratzke, Markus A1 - Varlamova, Olga A1 - Reif, Jürgen T1 - Femtosecond-laser-induced periodic surface structures on magnetic layer targets: The roles of femtosecond-laser interaction and of magnetization T2 - Applied Surface Science Y1 - 2017 U6 - https://doi.org/10.1016/j.apsusc.2017.03.148 SN - 0169-4332 VL - 417 SP - 84 EP - 87 ER - TY - GEN A1 - Obrosov, Aleksei A1 - Gulyaev, Roman A1 - Ratzke, Markus A1 - Volinsky, Alex A. A1 - Bolz, Sebastian A1 - Naveed, Muhammad A1 - Weiß, Sabine T1 - XPS and AFM Investigations of Ti-Al-N Coatings Fabricated Using DC Magnetron Sputtering at Various Nitrogen Flow Rates and Deposition Temperatures T2 - Metals N2 - Ti-Al-N coatings were deposited by direct current magnetron sputtering (DCMS) onto IN 718 at different nitrogen flow rates and deposition temperatures. The coatings’ properties were characterized using atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) as well as nanoindentation. It was found that higher deposition temperature leads to higher surface roughness and nitrogen flux influences the shape of grains. According to XPS, the bonding structure of all coatings exhibited the (Ti,Al)N phase. Mechanical properties depend on the Al content within the films. The coating with the best mechanical properties (deposited at 500 °C and 20 standard cubic centimeters per minute (sccm)) was further deposited onto tungsten carbide (WC) cutting tools for cylindrical turning experiments. A quasi-constant flank wear was observed until a machining volume of 23,500 mm³. KW - Ti-Al-N coatings KW - DC magnetron sputtering KW - XPS KW - AFM KW - nitrogen flow rate KW - surface morphology Y1 - 2017 UR - http://www.mdpi.com/2075-4701/7/2/52/htm U6 - https://doi.org/10.3390/met7020052 SN - 2075-4701 VL - 7 IS - 2 SP - 52 ER - TY - GEN A1 - Obrosov, Aleksei A1 - Gulyaev, Roman A1 - Zak, Andrzej A1 - Ratzke, Markus A1 - Naveed, Muhammad A1 - Dudzinski, Wlodzimierz A1 - Weiß, Sabine T1 - Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings T2 - Materials N2 - MAX phases (M = transition metal, A = A-group element, and X = C/N) are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100) and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), and nanoindentation. Transmission Electron Microscopy (TEM) was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm) and granular size (76 nm) combined with the highest hardness (15.9 GPa). The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films. KW - XPS KW - AFM KW - MAX phase KW - TEM KW - chemical bonding KW - surface morphology Y1 - 2017 UR - http://www.mdpi.com/1996-1944/10/2/156/htm U6 - https://doi.org/10.3390/ma10020156 SN - 1996-1944 VL - 10 IS - 2 SP - 156 ER - TY - CHAP A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Mitzner, Rolf A1 - Reif, Jürgen T1 - Ultrafast Transient Grating in Barium Fluoride T2 - Novel lasers and devices - basic aspects, 14 - 16 June 1999, ICM, Internationales Congress Center München, Munich, Germany Y1 - 1999 SP - S. 145 PB - Optical Society of America CY - Washington, DC ER - TY - GEN A1 - Reif, Jürgen A1 - Varlamova, Olga A1 - Varlamov, Sergej A1 - Bestehorn, Michael T1 - The role of asymmetric excitation in self-organized nanostructure formation upon femtosecond laser ablation T2 - Applied Physics / A Y1 - 2011 SN - 1432-0630 VL - 104 IS - 3 SP - 969 EP - 973 ER - TY - CHAP A1 - Reif, Jürgen A1 - Varlamova, Olga A1 - Varlamov, Sergej A1 - Bestehorn, Michael ED - Phipps, Claude R. T1 - The role of asymmetric excitation in self-organized nanostructure formation upon femtosecondlaser ablation T2 - International Symposium on High Power Laser Ablation 2012, Santa Fe, New Mexico, USA, 30 April - 3 May 2012 Y1 - 2012 SN - 978-0-7354-1068-8 SP - 428 EP - 441 PB - American Institute of Physics CY - Melville, NY ER - TY - CHAP A1 - Reif, Jürgen A1 - Costache, Florenta Adriana A1 - Henyk, Matthias A1 - Pandelov, Stanislaw T1 - Surface morphology after femtosecond laser ablation of insulators T2 - High-power laser ablation IV, 22 - 26 April 2002, Taos, USA, pt. 2 Y1 - 2002 SN - 0-8194-4524-X SP - 980 EP - 985 PB - SPIE CY - Bellingham, Wash. ER - TY - CHAP A1 - Reif, Jürgen A1 - Costache, Florenta Adriana A1 - Henyk, Matthias T1 - Sub-Picosecond Ion emission from Transparent Dielectrics T2 - Second International Symposium on Laser Precision Microfabrication, 16 - 18 May 2001, Singapore Y1 - 2002 SN - 0-8194-4137-6 SP - S. 82 PB - SPIE CY - Bellingham, Wash. ER - TY - CHAP A1 - Schmid, Reiner P. A1 - Reif, Jürgen T1 - All-Optical Full Logic Unit with Femtosecond Switching T2 - Second International Symposium on Laser Precision Microfabrication, 16 - 18 May 2001, Singapore Y1 - 2002 SN - 0-8194-4137-6 U6 - https://doi.org/10.1117/12.456869 SP - S. 460 PB - SPIE CY - Bellingham, Wash. ER - TY - CHAP A1 - Reif, Jürgen A1 - Varlamova, Olga A1 - Bounhalli, Mourad A1 - Arguirov, Tzanimir V. ED - Phipps, Claude R. T1 - Long-Time Feedback in the Formation of Self-Organized Nanostructures upon Multipulse Femtosecond Laser Ablation T2 - International Symposium on High Power Laser Ablation 2010, Santa Fe, New Mexico, 18 - 22 April 2010 Y1 - 2010 SN - 978-0-7354-0828-9 SP - 446 EP - 456 PB - American Institute of Physics CY - Melville, NY ER - TY - JOUR A1 - Schmid, Reiner P. A1 - Reif, Jürgen T1 - Ultraschnelles optisches Rechnen Y1 - 2002 ER - TY - CHAP A1 - Reif, Jürgen A1 - Costache, Florenta Adriana A1 - Eckert, Sebastian A1 - Kouteva-Arguirova, Simona A1 - Bestehorn, Michael A1 - Georgescu, Ionut A1 - Semorek, A. F. A1 - Martin, P. A1 - Gobert, O. A1 - Seifert, Winfried T1 - Formation of self-organized regular nanostructures upon femtosecond laser ablation T2 - Fifth International Symposium on Laser Precision Microfabrication, 11 - 14 May, 2004, Nara, Japan Y1 - 2004 SN - 0-8194-5623-3 SP - S. 737 PB - SPIE CY - Bellingham, Wash. ER - TY - CHAP A1 - Reif, Jürgen A1 - Varlamova, Olga A1 - Bounhalli, Mourad A1 - Arguirov, Tzanimir V. A1 - Schade, M. A1 - Leipner, Hartmut S. T1 - Long-time feedback in self-organized nanostructures formation upon multipulse femtosecond laser ablation T2 - Synthesis and photonics of nanoscale materials VII, 26 - 28 January 2010, San Francisco, California, United States Y1 - 2010 SN - 978-0-8194-7982-2 SP - 7586OH PB - SPIE CY - Bellingham, Wash. ER - TY - CHAP A1 - Costache, Florenta Adriana A1 - Eckert, Sebastian A1 - Reif, Jürgen T1 - On ultra-short laser induced instabilities at the surface of non-metallic solids T2 - High-power laser ablation VI, 7 - 12 May 2006, Taos, New Mexico, USA Y1 - 2006 SN - 0-8194-6326-4 U6 - https://doi.org/10.1117/12.673618 SP - 626107 PB - SPIE CY - Bellingham, Wash. ER - TY - GEN A1 - Borcia, Rodica A1 - Borcia, Ion-Dan A1 - Bestehorn, Michael A1 - Varlamova, Olga A1 - Hoefner, Kevin A1 - Reif, Jürgen T1 - Drop Behavior Influenced by the Correlation Length on Noisy Surfaces T2 - Langmuir Y1 - 2019 U6 - https://doi.org/10.1021/acs.langmuir.8b03878 VL - 35 SP - 928 EP - 934 ER - TY - GEN A1 - Varlamova, Olga A1 - Reif, Jürgen A1 - Stolz, Michael A1 - Borcia, Rodica A1 - Borcia, Ion-Dan A1 - Bestehorn, Michael T1 - Wetting properties of LIPSS structured silicon surfaces T2 - The European Physical Journal B N2 - The controlled dynamics of liquid drops via generation of specific wetting states on a solid surface is of great interests both in the fundamental and applied sciences. Considering that the wettability is strongly dependent on the surface topography and surface roughness, we investigate – through experiments and theory – the effect of laser-induced periodic surface structures (LIPSS) generated on silicon (100) targets as a control parameter of wetting properties. To obtain structured silicon surfaces with different morphological features, we patterned the surface by irradiation with femtosecond pulses from an amplified Ti:Sapphire laser system (790 nm/100 fs/1 kHz) at a fluence in the range of 0.4–1.2 J/cm2 on a spot with a diameter about of 100 μm. Variation of the applied irradiation dose results in surface modifications with the roughness about of a few tens of nanometers are ranging from regular LIPSS patterns with the lateral period of about 500–700 nm to complex agglomerations of 3-D microstructures with several-μm feature size. The theoretical study on the correlation of wetting properties with the surface topography has been performed within a phase field model. We found an excellent agreement of numerical results with experiments. Y1 - 2019 U6 - https://doi.org/10.1140/epjb/e2019-90672-2 SN - 1434-6036 SN - 1434-6028 VL - 92 IS - 5 ER - TY - GEN A1 - Varlamova, Olga A1 - Reif, Jürgen A1 - Varlamov, Sergej A1 - Bestehorn, Michael T1 - The laser polarization as control parameter in the formation of laser-induced periodic surface structures: Comparison of numerical and experimental results T2 - Applied Surface Science Y1 - 2011 SN - 0169-4332 VL - 257 IS - 12 SP - 5465 EP - 5469 ER - TY - GEN A1 - Varlamova, Olga A1 - Reif, Jürgen A1 - Varlamov, Sergej A1 - Bestehorn, Michael T1 - Modeling of the Laser Polarization as Control Parameter in Self-Organized Surface Pattern T2 - Journal of Nanoscience and Nanotechnology Y1 - 2011 SN - 1533-4880 VL - 11 IS - 10 SP - 9274 EP - 9281 ER - TY - CHAP A1 - Schneider, Thomas A1 - Wolfframm, Dirk A1 - Reif, Jürgen ED - Andersen, Peter E. ED - Johansen, P. M. ED - Pedersen, H. C. ED - Petersen, P. M. ED - Saffman, M. T1 - Highly Efficient, Ultrafast Laser Beam Manipulation by Laser Induced Index Grating in Barium Fluoride T2 - Advances in photorefractive materials, effects and devices, from the Seventh Topical Meeting on Photorefractive Materials, Effects and Devices, June 27 - 30, 1999, Elsinore, Denmark Y1 - 1999 SN - 1-55752-606-0 SP - S. 306 PB - Optical Society of America CY - Washington, DC ER - TY - CHAP A1 - Reif, Jürgen A1 - Henyk, Matthias A1 - Wolfframm, Dirk T1 - Explosive Femtosecond Ablation from Ionic Crystals T2 - Laser Applications in Microelectronics and Optoelectronic Manufacturing V, 24 - 26 January 2000, San Jose, USA Y1 - 2000 SN - 0-8194-3550-3 SP - S. 26 PB - SPIE CY - Bellingham, Wash. ER - TY - GEN A1 - Nitsch, Paul-G. A1 - Ratzke, Markus A1 - Pozarowska, Emilia A1 - Flege, Jan Ingo A1 - Alvarado Chavarin, Carlos A1 - Wenger, Christian A1 - Fischer, Inga Anita T1 - Deposition of reduced ceria thin films by reactive magnetron sputtering for the development of a resistive gas sensor T2 - Verhandlungen der DPG, Berlin 2024 N2 - The use of cerium oxide for hydrogen sensing is limited by the low electrical conductivity of layers deposited from a ceria target. To increase the electrical conductivity, partially reduced cerium oxide layers were obtained from a metallic cerium target by reactive magnetron sputtering. The proportions of the oxidation states Ce3+, present in reduced species, and Ce4+, present in fully oxidized species, were determined by ex-situ XPS. For electrical characterization, films were deposited on planarized tungsten finger electrodes. IV curves were measured over several days to investigate possible influences of oxygen and humidity on electrical conductivity. The morphological stability of the layers under ambient conditions was investigated by microscopical methods. The XPS results show a significant amount of Ce3+ in the layers. The electrical conductivity of as-grown samples is several orders of magnitude higher than that of samples grown from a ceria target. However, the conductivity decreases over time, indicating an oxidation of the layers. The surface morphology of the samples was found to be changing drastically within days, leading to partial delamination. KW - ceria KW - metalic cerium target KW - electrical conductivity KW - X-ray photoelectron spectroscopy (XPS) KW - oxidation states KW - morphology Y1 - 2024 UR - https://www.dpg-verhandlungen.de/year/2024/conference/berlin/part/ds/session/11/contribution/18 SN - 0420-0195 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Sürgers, Christoph A1 - Fischer, Gerda A1 - Oehme, Michael A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Slageren, Joris van A1 - Schulze, Jörg T1 - Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021 Y1 - 2021 SN - 978-1-6654-4761-4 U6 - https://doi.org/10.23919/MIPRO52101.2021.9596924. SN - 978-953-233-101-1 SP - 45 EP - 49 PB - Piscataway CY - IEEE ER - TY - GEN A1 - Berkmann, Fritz A1 - Augel, Lion A1 - Hack, Michael A1 - Kawaguchi, Yuma A1 - Weißhaupt, David A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Optimization of fully integrated Al nanohole array-based refractive index sensors for use with a LED light source Fritz Berkmann T2 - IEEE Photonics Journal KW - Sensors KW - Refractive index KW - Optical variables control KW - Optical refraction KW - Optical device fabrication KW - Germanium KW - Solid modeling Y1 - 2022 UR - https://ieeexplore.ieee.org/document/9781306 U6 - https://doi.org/10.1109/JPHOT.2022.3177354 SN - 1943-0655 VL - 14 IS - 3 SP - 1 EP - 8 ER - TY - GEN A1 - Steuer, Oliver A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Schulze, J. A1 - Maczko, H. A1 - Kudrawiec, Robert A1 - Fischer, Inga Anita A1 - Heller, R. A1 - Hübner, R. A1 - Khan, M. M. A1 - Georgiev, Yordan M. A1 - Zhou, Shengqiang A1 - Helm, M. A1 - Prucnal, Slawomir T1 - Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting T2 - Journal of Physics: Condensed Matter Y1 - 2022 U6 - https://doi.org/10.1088/1361-648X/aca3ea SN - 1361-648X VL - 35 IS - 5 ER - TY - GEN A1 - Xie, Yufang A1 - Birowska, Magdalena A1 - Funk, Hannes S. A1 - Fischer, Inga Anita A1 - Schwarz, Daniel A1 - Schulze, Jörg A1 - Zeng, Yu-Jia A1 - Helm, Manfred A1 - Zhou, Shengqiang A1 - Prucnal, Slawomir T1 - Tuning of Curie temperature in Mn5Ge3 films T2 - Journal of Applied Physics Y1 - 2022 U6 - https://doi.org/10.1063/5.0066717 SN - 1089-7550 VL - 131 SP - 105102-1 EP - 105102-8 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Augel, Lion A1 - Berkmann, Fritz A1 - Kawaguchi, Yuma A1 - Schlipf, Jon A1 - Schulze, Jörg T1 - Plasmonics-Integrated Ge PIN-Photodetectors T2 - ECS Transactions Y1 - 2019 U6 - https://doi.org/10.1149/09301.0041ecst SN - 1938-5862 SN - 1938-6737 VL - 93 IS - 1 SP - 41 EP - 44 ER - TY - GEN A1 - Augel, Lion A1 - Schlipf, Jon A1 - Bullert, Sergej A1 - Bürzele, Sebastian A1 - Schulze, Jörg A1 - Fischer, Inga Anita T1 - Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes T2 - Scientific Reports N2 - Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing. Y1 - 2021 U6 - https://doi.org/10.1038/s41598-021-85012-z SN - 2045-2322 IS - 11 ER - TY - GEN A1 - Elogail, Yasmine A1 - Berkmann, Fritz A1 - Clausen, Caterina J. A1 - Fischer, Inga Anita A1 - Hänel, Linda A. A1 - Schwarz, Daniel A1 - Schulze, Jörg T1 - Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si T2 - Microelectronics Journal Y1 - 2022 U6 - https://doi.org/10.1016/j.mejo.2022.105404 SN - 1879-2391 VL - 123 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Brehm, Moritz A1 - De Seta, Monica A1 - Isella, Giovanni A1 - Paul, Douglas J. A1 - Virgilio, Michele A1 - Capellini, Giovanni T1 - On-chip infrared photonics with Si-Ge-heterostructures: What is next? T2 - APL Photonics N2 - The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform KW - Heterostructures KW - Photodetectors KW - Photonics KW - Nanowires KW - Plasmonics KW - Epitaxy KW - Quantum wells KW - Lasers KW - Sensors KW - Electronic band structure Y1 - 2022 UR - https://aip.scitation.org/doi/10.1063/5.0078608 U6 - https://doi.org/10.1063/5.0078608 SN - 2378-0967 VL - 7 IS - 5 SP - 050901-1 EP - 050901-20 ER - TY - THES A1 - Varlamova, Olga T1 - Self-organized surface patterns originating from femtosecond laser-induced instability Y1 - 2013 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-29530 SN - 978-3-95404-604-1 PB - Cuvillier CY - Göttingen ER - TY - GEN A1 - Varlamova, Olga A1 - Bounhalli, Mourad A1 - Reif, Jürgen T1 - Influence of irradiation dose on laser-induced surface nanostructures on silicon T2 - Applied Surface Science Y1 - 2012 SN - 0169-4332 VL - 278 SP - 62 EP - 66 ER - TY - GEN A1 - Reif, Jürgen A1 - Costache, Florenta Adriana A1 - Varlamova, Olga A1 - Jia, G. A1 - Ratzke, Markus T1 - Self-organized regular surface patterning by pulsed laser ablation T2 - Physica Status Solidi C Y1 - 2009 U6 - https://doi.org/10.1002/pssc.200880719 SN - 1610-1634 VL - 6 IS - 3 SP - 681 EP - 686 ER - TY - CHAP A1 - Reif, Jürgen ED - Miotello, Antonio ED - Ossi, Paolo M. T1 - Basic Physics of Femtosecond Laser Ablation T2 - Laser-surface interactions for new materials production Y1 - 2010 SN - 978-3-642-03306-3 SN - 978-3-642-03307-0 SP - 19 EP - 41 PB - Springer CY - Berlin [u.a.] ER - TY - CHAP A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Jia, Guobin A1 - Seifert, Winfried A1 - Suckow, Stephan A1 - Thomas, Wilhelm T1 - Stark effect at dislocations in silicon for modulation of a 1,5 um light emitter T2 - Silicon photonics III, 21 - 24 January 2008, San Jose, California, USA Y1 - 2008 SN - 978-0-8194-7073-7 PB - SPIE CY - Bellingham, Wash. ER - TY - CHAP A1 - Costache, Florenta Adriana A1 - Eckert, Sebastian A1 - Reif, Jürgen T1 - On ultra-short laser pulse induced instabilities on the surface of non-metallic solids KW - Femtosecond laser KW - time-of-flight mass spectrometry KW - temporal dynamics KW - nanostructures Y1 - 2006 ER - TY - JOUR A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Yu, Xuegong T1 - Towards Silicon Based Light Emitters Using the Radiation from Dislocation Networks Y1 - 2006 ER - TY - JOUR A1 - Reif, Jürgen A1 - Ratzke, Markus A1 - Varlamova, Olga A1 - Costache, Florenta Adriana T1 - Electrical Properties of Laser-Ablation-Initiated Self-Organized Nanostructures on Silicon Surface Y1 - 2006 U6 - https://doi.org/10.1016/j.mseb.2006.07.030 ER - TY - GEN A1 - Yu, Xuegong A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Ratzke, Markus A1 - Reiche, Manfred T1 - Properties of dislocation networks formed by Si wafer direct bonding T2 - Materials Science in Semiconductor Processing Y1 - 2006 U6 - https://doi.org/10.1016/j.mssp.2006.01.070 VL - 9 IS - 1-3 SP - 96 EP - 101 ER - TY - JOUR A1 - Costache, Florenta Adriana A1 - Kouteva-Arguirova, Simona A1 - Reif, Jürgen T1 - Sub-damage-threshold femtosecond laser ablation from crystalline silicon: surface nanostructures and phase transformation JF - Applied Physics A Y1 - 2004 SN - 0947-8396 SN - 1432-0630 VL - 79 IS - 4-6 SP - 1429 EP - 1432 ER - TY - JOUR A1 - Kouteva-Arguirova, Simona A1 - Orlov, V. I. A1 - Seifert, Winfried A1 - Reif, Jürgen A1 - Richter, H. T1 - Raman Investigation of Stress and Phase Transformation Induced in Silicon by Indentation at High Temperatures JF - European Physics Journal of Applied Physics Y1 - 2004 SN - 1286-0042 SN - 1286-0050 VL - 27 IS - 1-3 SP - 279 EP - 283 ER - TY - GEN A1 - Costache, Florenta Adriana A1 - Ratzke, Markus A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Femtosecond laser ionization mass spectrometric analysis of layers grown by pulsed laser deposition T2 - Applied Surface Science Y1 - 2005 SN - 0169-4332 VL - 247 IS - 1-4 SP - 249 EP - 255 ER - TY - JOUR A1 - Reif, Jürgen A1 - Costache, Florenta Adriana A1 - Eckert, S. A1 - Henyk, Matthias T1 - Mechanisms of ultra-short laser pulse ablation from ionic crystals JF - Applied Physics A Y1 - 2004 SN - 0947-8396 SN - 1432-0630 VL - 79 IS - 4-6 SP - 1229 EP - 1231 ER - TY - CHAP A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried ED - Robbins, David J. T1 - Silicon-based Light Emission after Ion Implantation T2 - Optoelectronic integration on silicon, 27 - 28 January 2004, San Jose, California, USA Y1 - 2004 SN - 0-8194-5265-3 SP - S. 164 PB - SPIE CY - Bellingham, Wash. ER - TY - GEN A1 - Henyk, Matthias A1 - Reif, Jürgen T1 - Negative ion emission from ionic crystals upon ultra short laser pulse irradiation T2 - Applied Surface Science Y1 - 2003 SN - 0169-4332 VL - 208/209 SP - 71 EP - 76 ER - TY - GEN A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Temperature behaviour of photoluminescence and electron-beam-induced current recombination behaviour of extended defects in solar grade silicon T2 - Journal of Physics: Condensed Matter Y1 - 2002 SN - 1361-648X SN - 0953-8984 VL - 14 IS - 48 SP - 13169 EP - 13177 ER - TY - GEN A1 - Pandelov, Stanislaw A1 - Seifert, Winfried A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Analysis of local electric properties of grain boundaries in Si by electron-beam-induced-current techniques T2 - Journal of Physics: Condensed Matter Y1 - 2002 SN - 0953-8984 VL - 14 IS - 48 SP - 13161 EP - 13168 ER - TY - CHAP A1 - Reif, Jürgen A1 - Schneider, Thomas A1 - Schmid, Reiner P. A1 - Wolfframm, Dirk ED - Helvajian, Henry T1 - Nonlinear optical characterization of the surface of silicon wafers: In-situ detection of external stress T2 - Laser Applications in Microelectronics and Optoelectronic Manufacturing V, 24 - 26 January 2000, San Jose, USA Y1 - 2000 SN - 0-8194-3550-3 PB - SPIE CY - Bellingham, Wash. ER - TY - GEN A1 - Schade, M. A1 - Varlamova, Olga A1 - Reif, Jürgen A1 - Blumtritt, Horst A1 - Erfurth, Wilfried A1 - Leipner, Hartmut S. T1 - High-resolution investigations of ripple structures formed by femtosecond laser irradiation of silicon Y1 - 2010 ER - TY - GEN A1 - Ratzke, Markus A1 - Mchedlidze, Teimuraz A1 - Arguirov, Tzanimir V. A1 - Acharya, N. A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Scanning probe studies of amorphous silicon subjected to laser annealing T2 - Physica status solidi (C) Y1 - 2011 SN - 1610-1642 VL - 8 IS - 4 SP - 1351 EP - 1355 ER - TY - THES A1 - Trushin, Maxim T1 - Electronic properties of interfaces produced by silicon wafer hydrophilic bonding Y1 - 2011 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-22841 ER - TY - JOUR A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Yu, Xuegong A1 - Jia, G. A1 - Vyvenko, Oleg F. A1 - Mtchedlidze, T. A1 - Reiche, Manfred A1 - Sha, J. A1 - Yang, D. A1 - Arguirov, Tzanimir V. T1 - Silicon naostructures for IR light emitters JF - Materials Sience and Engineering C Y1 - 2007 SN - 1873-0191 VL - 27 IS - 5-8 SP - 1252 EP - 1259 ER - TY - JOUR A1 - Arguirov, Tzanimir V. A1 - Akhmetov, V. D. A1 - Kouteva-Arguirova, Simona A1 - Kittler, Martin A1 - Rölver, R. A1 - Berghoff, B. A1 - Först, M. A1 - Batzner, D. L. A1 - Spangenberg, B. A1 - Mtchedlidze, T. T1 - Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells Y1 - 2007 ER - TY - CHAP A1 - Reif, Jürgen A1 - Varlamova, Olga A1 - Costache, Florenta Adriana A1 - Eckert, S. ED - Dumitras, Dan C. T1 - Femtosecond laser induced surface instability resulting in self organized nanostructures T2 - Advanced laser technologies 2006, 8 - 12 September 2006, Brasov, Romania Y1 - 2007 SN - 978-0-8194-6744-7 SP - 66060G PB - SPIE CY - Bellingham, Wash. ER - TY - CHAP A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Yu, Xuegong A1 - Reiche, Manfred T1 - Dislocation engineering for a Si-based light emitter at 1.5 μm T2 - Technical digest, IEDM, IEEE International Electron Devices Meeting 2005, Washington, DC, December 5 - 7, 2005 Y1 - 2005 SN - 0-7803-9268-X SP - 1005 EP - 1008 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - GEN A1 - Inoue, H. A1 - Nakatsu, M. A1 - Tanahashi, K. A1 - Yamada-Kaneta, H. A1 - Ono, H. A1 - Akhmetov, V. D. A1 - Lysytskiy, O. A1 - Richter, H. T1 - Annealing Behavior of New Nitrogen Infrared Absorption Peaks in Cz Silicon T2 - Solid State Phenomena Y1 - 2005 SN - 1012-0394 VL - 108-109 SP - 609 EP - 614 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Binetti, S. A1 - LeDonne, A. A1 - Pizzini, S. A1 - Suezawa, M. T1 - Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon Y1 - 2005 ER - TY - JOUR A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Yu, Xuegong T1 - Enhanced silicon band edge related radiation: Origin and applicability for light emitters Y1 - 2005 ER - TY - CHAP A1 - Reif, Jürgen A1 - Costache, Florenta Adriana A1 - Kouteva-Arguirova, Simona T1 - Femtosecond laser-induced nanostructuring and phase transformation of crystalline silicom Y1 - 2004 ER - TY - CHAP A1 - Reif, Jürgen A1 - Schmid, Reiner P. T1 - Efficient instantaneous optical switching, frequency conversion and simple logic operations on a femtosecond time scale T2 - 25th International Congress on High-Speed Photography and Photonics, 29 September - 4 October 2002, Beaune, France Y1 - 2003 UR - http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=889727 SN - 0-8194-4744-7 U6 - https://doi.org/10.1117/12.516816 SP - 137 EP - 140 PB - SPIE CY - Bellingham, Wash. ER - TY - JOUR A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Temperature Behaviour of Extended Defects in Solar Grade Silicon Investigated by Photoluminescence and EBIC Y1 - 2003 ER - TY - CHAP A1 - Reif, Jürgen A1 - Costache, Florenta Adriana A1 - Henyk, Matthias T1 - Explosive ion emission from ionic crystals induced by ultra-short laser pulses - influence on surface morphology Y1 - 2003 ER - TY - JOUR A1 - Schneider, Thomas A1 - Schmid, Reiner P. A1 - Reif, Jürgen T1 - Efficent self phase matched third harmonic generation of ultrashort pulses in a material with positive dispersion JF - Applied Physics B Y1 - 2001 SN - 0946-2171 SN - 1432-0649 VL - 72 IS - 5 SP - 563 EP - 565 ER - TY - GEN A1 - Schmid, Reiner P. A1 - Schneider, Thomas A1 - Reif, Jürgen T1 - Optical Processing on a Femtosecond Time Scale T2 - Optics Communication Y1 - 2002 SN - 0030-4018 VL - 207 IS - 1-6 SP - 155 EP - 160 ER - TY - THES A1 - Schneider, Thomas T1 - Transientes ultraschnelles Brechungsindexgitter in Barium-Fluorid: Der Einfluß des Gitters auf nichtlineare optische Phänomene Y1 - 2000 SN - 3-8265-8060-5 PB - Shaker CY - Aachen ER - TY - GEN A1 - Henyk, Matthias A1 - Mitzner, Rolf A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Laser Induced Ion Emission from Dielectrics T2 - Applied Surface Science Y1 - 2000 SN - 0169-4332 VL - 154-155 SP - 249 EP - 255 ER - TY - GEN A1 - Funk, Hannes S. A1 - Kern, Michael A1 - Weißhaupt, David A1 - Sürgers, Christoph A1 - Fischer, Inga Anita A1 - Oehme, Michael A1 - Slageren, Joris van A1 - Schulze, Jörg T1 - Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers T2 - Journal of Magnetism and Magnetic Materials Y1 - 2022 U6 - https://doi.org/10.1016/j.jmmm.2021.168731. SN - 0304-8853 VL - 546 ER - TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Oehme, Michael A1 - Bloos, Dominik A1 - Berkmann, Fritz A1 - Seidel, Lukas A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - High mobility Ge 2DHG based MODFETs for low-temperature applications T2 - Semiconductor Science and Technology Y1 - 2023 U6 - https://doi.org/10.1088/1361-6641/acb22f SN - 1361-6641 VL - 38 IS - 3 ER - TY - GEN A1 - Xie, Yufang A1 - Li, Zichao A1 - Begeza, Viktor A1 - Funk, Hannes S. A1 - Fischer, Inga Anita A1 - Zeng, Yu-Jia A1 - Helm, Manfred A1 - Zhou, Shengqiang A1 - Prucnal, Slawomir T1 - Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3 T2 - Semiconductor Science and Technology N2 - Mn5Ge3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn5Ge3 layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) method. We investigate the influence of the substrate orientation, Mn layer thickness and annealing parameters on the crystallographic orientation and magnetization of Mn5Ge3. It is shown that after millisecond range SPE, Mn5Ge3 films always have a preferred (100) orientation whether grown on Ge (001) or (111) substrates, which determines the orientation of the magnetization easy axis lying in the film plane along c axis independent of the layer thickness. The Curie temperature of Mn5Ge3 weakly depends on fabrication parameters. KW - solid phase epitaxy KW - flash lamp annealing KW - ferromagnetic film KW - spintronic KW - fabrication parameter KW - structural property Y1 - 2022 UR - https://iopscience.iop.org/article/10.1088/1361-6641/ac6689 U6 - https://doi.org/10.1088/1361-6641/ac6689 SN - 1361-6641 VL - 37 IS - 6 SP - 1 EP - 8 ER - TY - GEN A1 - Schlykow, Viktoria A1 - Manganelli, Constanza Lucia A1 - Römer, Friedhard A1 - Clausen, Caterina J. A1 - Augel, Lion A1 - Schulze, Jörg A1 - Katzer, Jens A1 - Schubert, Michael Andreas A1 - Witzigmann, Bernd A1 - Schroeder, Thomas A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas T2 - Nanotechnology Y1 - 2020 U6 - https://doi.org/10.1088/1361-6528/ab91ef SN - 1361-6528 VL - 31 IS - 34 ER - TY - GEN A1 - Schlipf, Jon A1 - Martin, Elena A1 - Stchakovsky, Michel A1 - Benedetti, Alessandro A1 - Fischer, Inga Anita A1 - Schulze, Jörg A1 - Chiussi, Stefano T1 - Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy T2 - Journal of Vacuum Science & Technology B Y1 - 2019 U6 - https://doi.org/10.1116/1.5122777 SN - 2166-2754 VL - 37 IS - 6 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Clausen, Caterina J. A1 - Schwarz, Daniel A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Virgilio, Michele A1 - da Silva Figueira, Maria Cecilia A1 - Birner, Stefan A1 - Koelling, Sebastian A1 - Koenraad, Paul M. A1 - Huang, Michael R. S. A1 - Koch, Christoph T. A1 - Wendav, Torsten A1 - Busch, Kurt A1 - Schulze, Jörg T1 - Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells T2 - Physical Review Materials Y1 - 2020 U6 - https://doi.org/10.1103/PhysRevMaterials.4.024601 SN - 2475-9953 VL - 4 IS - 2 ER - TY - GEN A1 - Bergmann, Fritz A1 - Ayasse, Markus A1 - Schlipf, Jon A1 - Mörz, Florian A1 - Weißhaupt, David A1 - Oehme, Michael A1 - Prucnal, Slawomir A1 - Kawaguchi, Yuma A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Plasmonic gratings from highly doped Ge1−ySny films on Si T2 - Journal of Physics D: Applied Physics Y1 - 2021 SN - 1361-6463 VL - 54 IS - 44 ER - TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Kern, Michal A1 - Dettling, Marco M. A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Sürgers, Christoph A1 - Slageren, Joris van A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8% Sn T2 - Journal of Physics: Condensed Matter Y1 - 2021 U6 - https://doi.org/10.1088/1361-648X/abcb68 SN - 1361-648X VL - 33 IS - 8 ER - TY - GEN A1 - Schlipf, Jon A1 - Fischer, Inga Anita T1 - Rigorous coupled-wave analysis of a multi-layered plasmonic integrated refractive index sensor T2 - Optics Express Y1 - 2021 U6 - https://doi.org/10.1364/OE.438585 SN - 1094-4087 VL - Vol. 29 IS - 22 SP - 36201 EP - 36210 ER - TY - GEN A1 - Wen, Shuyu A1 - Shaikh, Mohd Saif A1 - Steuer, Oliver A1 - Prucnal, Slawomir A1 - Grenzer, Jörg A1 - Hübner, René A1 - Turek, Marcin A1 - Pyszniak, Krzysztof A1 - Reiter, Sebastian A1 - Fischer, Inga Anita A1 - Georgiev, Yordan M. A1 - Helm, Manfred A1 - Wu, Shaoteng A1 - Luo, Jun-Wei A1 - Zhou, Shengqiang A1 - Berencén, Yonder T1 - Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques T2 - Applied Physics Letters N2 - GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology. KW - Electric currents KW - Semiconductors KW - Photodetectors KW - C-MOS KW - Electromagnetic radiation detectors KW - Crystal structure KW - Alloys KW - Ion implantation KW - Ion beam analysis Y1 - 2023 UR - https://pubs.aip.org/aip/apl/article/123/8/081109/2907921 U6 - https://doi.org/10.1063/5.0166799 SN - 0003-6951 VL - 123 IS - 8 SP - 1 EP - 7 ER - TY - GEN A1 - Mai, Christian A1 - Marschmeyer, Steffen A1 - Peczek, Anna A1 - Kroh, Aleksandra A1 - Jose, Josmy A1 - Reiter, Sebastian A1 - Fischer, Inga Anita A1 - Wenger, Christian A1 - Mai, Andreas T1 - Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology T2 - ECS Transactions N2 - In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2 at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 % and RMS of 1.413 nm for 150 nm thick TiN layers. KW - plasmonics KW - nanohole array KW - germanium detector Y1 - 2022 U6 - https://doi.org/10.1149/10904.0035ecst SN - 1938-5862 VL - 109 IS - 4 SP - 35 EP - 46 ER - TY - GEN A1 - Berkmann, Fritz A1 - Ayasse, Markus A1 - Mörz, Florian A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Titanium and Nickel as alternative materials for mid Infrared Plasmonic T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021 Y1 - 2021 SN - 978-953-233-101-1 SN - 978-1-6654-4761-4 U6 - https://doi.org/10.23919/MIPRO52101.2021.9597155 SP - 36 EP - 39 PB - Piscataway CY - IEEE ER - TY - GEN A1 - Han, Weijia A1 - Reiter, Sebastian A1 - Schlipf, Jon A1 - Mai, Christian A1 - Spirito, Davide A1 - Jose, Josmy A1 - Wenger, Christian A1 - Fischer, Inga Anita T1 - Strongly enhanced sensitivities of CMOS compatible plasmonic titanium nitride nanohole arrays for refractive index sensing under oblique incidence T2 - Optics Express N2 - Titanium nitride (TiN) is a complementary metal-oxide-semiconductor (CMOS) compatible material with large potential for the fabrication of plasmonic structures suited for device integration. However, the comparatively large optical losses can be detrimental for application. This work reports a CMOS compatible TiN nanohole array (NHA) on top of a multilayer stack for potential use in integrated refractive index sensing with high sensitivities at wavelengths between 800 and 1500 nm. The stack, consisting of the TiN NHA on a silicon dioxide (SiO2) layer with Si as substrate (TiN NHA/SiO2/Si), is prepared using an industrial CMOS compatible process. The TiN NHA/SiO2/Si shows Fano resonances in reflectance spectra under oblique excitation, which are well reproduced by simulation using both finite difference time domain (FDTD) and rigorous coupled-wave analysis (RCWA) methods. The sensitivities derived from spectroscopic characterizations increase with the increasing incident angle and match well with the simulated sensitivities. Our systematic simulation-based investigation of the sensitivity of the TiN NHA/SiO2/Si stack under varied conditions reveals that very large sensitivities up to 2305 nm per refractive index unit (nm RIU−1) are predicted when the refractive index of superstrate is similar to that of the SiO2 layer. We analyze in detail how the interplay between plasmonic and photonic resonances such as surface plasmon polaritons (SPPs), localized surface plasmon resonances (LSPRs), Rayleigh Anomalies (RAs), and photonic microcavity modes (Fabry-Pérot resonances) contributes to this result. This work not only reveals the tunability of TiN nanostructures for plasmonic applications but also paves the way to explore efficient devices for sensing in broad conditions. KW - TiN KW - Plasmonics Y1 - 2023 U6 - https://doi.org/10.1364/OE.481993 SN - 1094-4087 VL - 31 IS - 11 SP - 17389 EP - 17407 ER - TY - GEN A1 - Funk, Hannes S. A1 - Kern, Michael A1 - Weisshaupt, David A1 - Sürgers, Christoph A1 - Fischer, Inga Anita A1 - Oehme, Michael A1 - Slageren, Joris van A1 - Schulze, Jörg T1 - Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content T2 - ECS Transactions Y1 - 2019 U6 - https://doi.org/10.1149/09301.0101ecst SN - 1938-5862 SN - 1938-6737 VL - 93 IS - 1 SP - 101 EP - 104 ER - TY - GEN A1 - Augel, Lion A1 - Fischer, Inga Anita A1 - Gollhofer, Martin A1 - Oehme, Michael A1 - Schulze, Jörg T1 - Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas T2 - Journal of Applied Physics Y1 - 2020 U6 - https://doi.org/10.1063/5.0012279 SN - 1089-7550 VL - 128 IS - 1 SP - 013105-1 EP - 013105-8 ER - TY - GEN A1 - Schlipf, Jon A1 - Tetzner, Henriette A1 - Spirito, Davide A1 - Manganelli, Constanza Lucia A1 - Capellini, Giovanni A1 - Huang, Michael R. S. A1 - Koch, Christoph T. A1 - Clausen, Caterina J. A1 - Elsayed, Ahmed A1 - Schulze, Jörg A1 - Fischer, Inga Anita T1 - Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content T2 - Journal of Raman Spectroscopy Y1 - 2021 U6 - https://doi.org/10.1002/jrs.6098 SN - 1097-4555 ER - TY - GEN A1 - Tetzner, Henriette A1 - Seifert, W. A1 - Skibitzki, Oliver A1 - Yamamoto, Yuji A1 - Lisker, Marco A1 - Mirza, M. M. A1 - Fischer, Inga Anita A1 - Paul, Douglas J. A1 - De Seta, Monica A1 - Capellini, Giovanni T1 - Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001) T2 - Applied Physics Letter Y1 - 2023 U6 - https://doi.org/10.1063/5.0152962 SN - 1077-3118 VL - 122 IS - 24 ER - TY - GEN A1 - Hayat, Ahsan A1 - Spirito, Davide A1 - Corley-Wiciak, Agnieszka Anna A1 - Schubert, Markus Andreas A1 - Masood, Maria A1 - Reichmann, Felix A1 - Ratzke, Markus A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates T2 - Materials Science in Semiconductor Processing Y1 - 2023 U6 - https://doi.org/10.1016/j.mssp.2023.107693 SN - 1873-4081 VL - 165 ER - TY - GEN A1 - Steuer, O. A1 - Liedke, Maciej O. A1 - Butterling, M. A1 - Schwarz, D. A1 - Schulze, J. A1 - Li, Z. A1 - Wagner, A. A1 - Fischer, Inga Anita A1 - Hübner, R. A1 - Zhou, S. T1 - Evolution of point defects in pulsed-laser-melted Ge1-xSnx probed by positron annihilation lifetime spectroscopy T2 - Journal of Physics: Condensed Matter N2 - Direct-band-gap Germanium-Tin alloys (Ge1-xSnx) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge1-xSnx films treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening – variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge1-xSnx films exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters. KW - GeSn KW - laser annealing KW - positron annihilation KW - PLM KW - point defects Y1 - 2023 UR - https://iopscience.iop.org/article/10.1088/1361-648X/ad0a10/meta U6 - https://doi.org/10.1088/1361-648X/ad0a10 SN - 0953-8984 VL - 36 IS - 8 SP - 1 EP - 11 ER - TY - GEN A1 - Efremenko, Yulia A1 - Laroussi, Arwa A1 - Sengül, Akant A1 - Corley-Wiciak, Agnieszka Anna A1 - Fischer, Inga Anita A1 - Mirsky, Vladimir M. T1 - Deposition of Polymers on Titanium Nitride Electrodes T2 - Coatings N2 - The application of titanium nitride (TiN) as an electrode for electrochemical deposition or characterization requires the removal of an insulating layer from its surface. This process was studied and optimized, and the conditions for the complete removal of this layer through treatment with oxalic acid were formulated. The obtained TiN surfaces were used for the deposition of various conducting and non-conducting polymers. Two different approaches were applied: (i) in situ electrochemical synthesis of the main classes of conducting polymers, including polyaniline, polypyrrole, polythiophene, and selected derivatives thereof, and (ii) electrostatically driven layer-by-layer (LbL) deposition of multilayers of oppositely charged polyelectrolytes. The deposited polymers were characterized by electrochemical methods. The electrochemical properties of the deposited conducting polymers and their deposition on the TiN surface were comparable to those of the metallic electrodes. The films produced via LbL deposition exhibited a pronounced influence of the charge of the last deposited polymer on the redox reaction of ferri/ferrocyanide, validating the charge alteration with each successive polymer layer deposition. The studied deposition technologies can be used for the modification of TiN surfaces required in applications of this material in chemical sensors and other devices. Y1 - 2024 U6 - https://doi.org/10.3390/coatings14020215 SN - 2079-6412 VL - 14 IS - 2 ER - TY - GEN A1 - Tetzner, Henriette A1 - Fischer, Inga Anita A1 - Skibitzki, Oliver A1 - Mirza, M. M. A1 - Manganelli, Constanza Lucia A1 - Luongo, G. A1 - Spirito, Davide A1 - Douglas, J. P. A1 - De Seta, Monica A1 - Capellini, Giovanni T1 - Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001) T2 - Applied Physics Letters Y1 - 2021 U6 - https://doi.org/10.1063/5.0064477 SN - 1077-3118 SN - 0003-6951 VL - 119 IS - 15 ER - TY - GEN A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Oberbeck, Lars A1 - Schroeder, Uwe A1 - Costina, Ioan A1 - Lupina, Grzegorz A1 - Ratzke, Markus A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films T2 - Journal of the electrochemical society Y1 - 2008 U6 - https://doi.org/10.1149/1.2875741 SN - 1945-7111 VL - 155 IS - 5 SP - G97 EP - G114 ER - TY - GEN A1 - Reiter, Sebastian A1 - Han, Weijia A1 - Mai, Christian A1 - Spirito, Davide A1 - Jose, Josmy A1 - Zöllner, Marvin Hartwig A1 - Fursenko, Oksana A1 - Schubert, Markus Andreas A1 - Stemmler, Ivo A1 - Wenger, Christian A1 - Fischer, Inga Anita T1 - Titanium Nitride Plasmonic Nanohole Arrays for CMOS-Compatible Integrated Refractive Index Sensing: Influence of Layer Thickness on Optical Properties T2 - Plasmonics Y1 - 2023 U6 - https://doi.org/10.1007/s11468-023-01810-3 SN - 1557-1963 SP - 1 EP - 13 ER - TY - GEN A1 - Berkmann, F. A1 - Steuer, Oliver A1 - Ganss, Fabian A1 - Prucnal, Slawomir A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx T2 - Optical Materials Express Y1 - 2023 U6 - https://doi.org/10.1364/OME.479637 SN - 2159-3930 VL - 13 IS - 3 SP - 752 EP - 763 ER - TY - GEN A1 - Oleynik, Paul A1 - Berkmann, Fritz A1 - Reiter, Sebastian A1 - Schlipf, Jon A1 - Ratzke, Markus A1 - Yamamoto, Yuji A1 - Fischer, Inga Anita T1 - Strong Optical Coupling of Lattice Resonances in a Top-down Fabricated Hybrid Metal–Dielectric Al/Si/Ge Metasurface T2 - Nano Letters N2 - Optical metasurfaces enable the manipulation of the light–matter interaction in ultrathin layers. Compared with their metal or dielectric counterparts, hybrid metasurfaces resulting from the combination of dielectric and metallic nanostructures can offer increased possibilities for interactions between modes present in the system. Here, we investigate the interaction between lattice resonances in a hybrid metal–dielectric metasurface obtained from a single-step nanofabrication process. Finite-difference time domain simulations show the avoided crossing of the modes appearing in the wavelength-dependent absorptance inside the Ge upon variations in a selected geometry parameter as evidence for strong optical coupling. We find good agreement between the measured and simulated absorptance and reflectance spectra. Our metasurface design can be easily incorporated into a top-down optoelectronic device fabrication process with possible applications ranging from on-chip spectroscopy to sensing. KW - metamaterials KW - semiconductors KW - hybridization KW - optoelectronics Y1 - 2024 U6 - https://doi.org/10.1021/acs.nanolett.3c05050 SN - 1530-6984 SN - 1530-6992 VL - 24 IS - 10 SP - 3142 EP - 3149 ER - TY - GEN A1 - Schlipf, Jon A1 - Berkmann, Fritz A1 - Yamamoto, Yuji A1 - Reichenbach, Marc A1 - Veleski, Mitko A1 - Kawaguchi, Y. A1 - Mörz, Florian A1 - Tomm, Jens W. A1 - Weißhaupt, David A1 - Fischer, Inga Anita T1 - Robust Si/Ge heterostructure metasurfaces as building blocks for wavelength-selective photodetectors T2 - Applied Physics Letters Y1 - 2023 U6 - https://doi.org/10.1063/5.0134458 SN - 1077-3118 VL - 122 IS - 12 ER -