TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Krause, Michael A1 - Pippel, Eckhard T1 - Trap-Assisted Tunneling on Extended Defects in Tunnel Field-Effect Transistors T2 - Japanese Journal of Applied Physics Y1 - 2014 U6 - https://doi.org/10.7567/JJAP.53.04EC03 SN - 1347-4065 VL - 53 IS - 4S, 04EC03 SP - 1 EP - 6 ER - TY - GEN A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred A1 - Krause, Christoph A1 - Mankovics, Daniel T1 - About dislocation and oxygen related luminescence of Si around 0.8 eV T2 - Physica Status Solidi C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201400231 SN - 1610-1642 VL - 12 IS - 8 SP - 1077 EP - 1080 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Erfurth, Wilfried A1 - Haehnel, Angelika A1 - Übensee, Hartmut T1 - Strain and carrier transport along dislocations T2 - Physica Status Solidi C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201400298 SN - 1610-1642 VL - 12 IS - 8 SP - 1071 EP - 1076 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Kosina, Hans A1 - Lugstein, Alois A1 - Übensee, Hartmut T1 - Electronic Properties of Dislocations T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.141 SN - 1012-0394 VL - 242 SP - 141 EP - 146 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Saring, Philipp A1 - Arguirov, Tzanimir V. A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, J. A1 - Kittler, Martin T1 - Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.361 SN - 1012-0394 VL - 242 SP - 361 EP - 367 ER - TY - JOUR A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Bakalski, Winfried A1 - Simbürger, Werner T1 - Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer Y1 - 2005 ER - TY - CHAP A1 - Wipf, Christian A1 - Sorge, Roland A1 - Weger, Peter T1 - Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications T2 - Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011 N2 - A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time. Y1 - 2011 SN - 978-1-4244-8060-9 U6 - https://doi.org/10.1109/SIRF.2011.5719310 SP - 121 EP - 124 PB - IEEE CY - Piscataway ER - TY - CHAP A1 - Debski, Wojciech Andrzej A1 - Langmann, U. A1 - Weger, Peter A1 - Mayr, P. A1 - Matz, R. T1 - Keramische System-in-Package-Technologie für 5GHz-Transceivermodul T2 - Deutsche IMAPS-Konferenz 2005, 10. - 11.10.05, München Y1 - 2005 N1 - CD-ROM PB - IMAPS Deutschland CY - München ER - TY - PAT A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred T1 - Light-emitting semiconductor structure and optoelectronic component therefrom Y1 - 2015 ER - TY - CHAP A1 - Winkler, W. A1 - Borngräber, J. A1 - Heinemann, B. T1 - 60GHz and 76GHz Oscillators in µm SiGe:C BiCMOS Y1 - 2003 ER - TY - CHAP A1 - Bakalski, Winfried A1 - Scholtz, A. L. A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Simbürger, Werner A1 - Thüringer, R. A1 - Wohlmuth, H.-D. T1 - A Fully Integrated 7-18 GHz Power Amplifier with On-Chip Output Balun in 75 GHz-fT SiGe-Bipolar T2 - Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Toulouse, France, 29 - 20 Sept. 2003, IEEE Y1 - 2003 SN - 0-7803-7800-8 SP - 61 EP - 66 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - CHAP A1 - Bakalski, Winfried A1 - Vasylyev, Andriy A1 - Simbürger, Werner A1 - Scholtz, A. L. A1 - Thüringer, R. T1 - A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-bipolar power amplifier with 50 Ohm output T2 - Proceedings of the 29th European Solid-State Circuits Conference, Estoril, Portugal, 16 - 18 September 2003 Y1 - 2003 SN - 0-7803-7995-0 SP - 561 EP - 564 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers T2 - Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States Y1 - 2015 U6 - https://doi.org/10.1117/12.2080816 PB - International Society for Optics and Photonics ER - TY - JOUR A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - Monolithically integrated ?? frequency synthesiser with distributed reference spurs Y1 - 2008 ER - TY - JOUR A1 - Debski, Wojciech Andrzej A1 - Weger, Peter T1 - A Monolithically Integrated 23-24 GHz Tuned Down-Converter in 0.13 µm CMOS Y1 - 2007 ER - TY - JOUR A1 - Debski, Wojciech Andrzej A1 - Weger, Peter T1 - 5-6 GHz Low-Power, High Linearity Differential CMOS LNA with Robust ESD Protection Y1 - 2007 ER - TY - JOUR A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - 11 GHz CMOS frequency synthesiser Y1 - 2006 ER - TY - JOUR A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Bakalski, Winfried T1 - 17 GHz 50-60 mW Power Amplifiers in 0.13 um standard CMOS Y1 - 2006 ER - TY - JOUR A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Simbürger, Werner T1 - Ultra broadband 20.5-31 GHz monolithically integrated CMOS power amplifier Y1 - 2005 ER - TY - JOUR A1 - Bakalski, Winfried A1 - Vasylyev, Andriy T1 - A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-bipolar power amplifier with 50 Ohm output Y1 - 2004 ER - TY - JOUR A1 - Bakalski, Winfried A1 - Weger, Peter A1 - Ilkov, N. A1 - Scholtz, A. L. A1 - Dernovsek, N. A1 - Matz, R. A1 - Simbürger, Werner T1 - A 5-6.5GHz LTCC Power Amplifier Module with 0.3W at 2.4V in Si-bipolar Y1 - 2003 ER - TY - THES A1 - Solomko, Valentyn A. T1 - Monolithically integrated Sigma-Delta Frequency Synthesizers in 0.13 µm CMOS KW - Integrierte Schaltung KW - Frequenzsynthese KW - CMOS-Schaltung KW - Sigma-Delta-Wandler Y1 - 2008 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-4656 ER - TY - THES A1 - Debski, Wojciech Andrzej T1 - Multi-band adaptive WLAN receivers in 0.13 µm CMOS KW - Drahtloses lokales Netz KW - CMOS-Schaltung Y1 - 2007 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-3689 ER - TY - THES A1 - Vasylyev, Andriy T1 - Integrated RF power amplifier design in silicon based technologies KW - Siliciumbauelement KW - Radiofrequenzbereich KW - Verstärker KW - Leistungsverstärker KW - CMOS Y1 - 2006 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-202 ER - TY - JFULL ED - Seibt, Michael ED - Kittler, Martin T1 - Physica Status Solidi : C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201570099 N1 - Special Issue: 17th International Conference on Extended Defects in Semiconductors (EDS 2014) VL - 12 IS - 8 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Widmann, Daniel A1 - Gollhofer, Martin A1 - Körner, Roman A1 - Bechler, Stefan A1 - Fischer, Inga Anita A1 - Wendav, Torsten A1 - Kasper, Erich A1 - Schulze, Jörg A1 - Kittler, Martin T1 - Electroluminescence of GeSn/Ge MQW LEDs on Si substrate T2 - Optics Letters Y1 - 2015 U6 - https://doi.org/10.1364/OL40.003209 VL - 40 IS - 13 SP - 3209 EP - 3212 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Schmelz, Matthias A1 - Stolz, Ronny A1 - Pippel, Eckhard A1 - Übensee, Hartmut A1 - Kermann, M. A1 - Ortlepp, Thomas T1 - Single-Electron Transitions In One-Dimensional Native Nanostructures T2 - Journal of Physics: Conference Series Y1 - 2014 U6 - https://doi.org/10.1088/1742-6596/568/5/052024 SN - 1742-6588 VL - 568 SP - 052024 ER -