TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Krause, Michael A1 - Pippel, Eckhard T1 - Trap-Assisted Tunneling on Extended Defects in Tunnel Field-Effect Transistors T2 - Japanese Journal of Applied Physics Y1 - 2014 U6 - https://doi.org/10.7567/JJAP.53.04EC03 SN - 1347-4065 VL - 53 IS - 4S, 04EC03 SP - 1 EP - 6 ER - TY - GEN A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred A1 - Krause, Christoph A1 - Mankovics, Daniel T1 - About dislocation and oxygen related luminescence of Si around 0.8 eV T2 - Physica Status Solidi C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201400231 SN - 1610-1642 VL - 12 IS - 8 SP - 1077 EP - 1080 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Erfurth, Wilfried A1 - Haehnel, Angelika A1 - Übensee, Hartmut T1 - Strain and carrier transport along dislocations T2 - Physica Status Solidi C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201400298 SN - 1610-1642 VL - 12 IS - 8 SP - 1071 EP - 1076 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Kosina, Hans A1 - Lugstein, Alois A1 - Übensee, Hartmut T1 - Electronic Properties of Dislocations T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.141 SN - 1012-0394 VL - 242 SP - 141 EP - 146 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Saring, Philipp A1 - Arguirov, Tzanimir V. A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, J. A1 - Kittler, Martin T1 - Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.361 SN - 1012-0394 VL - 242 SP - 361 EP - 367 ER - TY - JOUR A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Bakalski, Winfried A1 - Simbürger, Werner T1 - Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer Y1 - 2005 ER - TY - CHAP A1 - Wipf, Christian A1 - Sorge, Roland A1 - Weger, Peter T1 - Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications T2 - Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011 N2 - A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time. Y1 - 2011 SN - 978-1-4244-8060-9 U6 - https://doi.org/10.1109/SIRF.2011.5719310 SP - 121 EP - 124 PB - IEEE CY - Piscataway ER - TY - CHAP A1 - Debski, Wojciech Andrzej A1 - Langmann, U. A1 - Weger, Peter A1 - Mayr, P. A1 - Matz, R. T1 - Keramische System-in-Package-Technologie für 5GHz-Transceivermodul T2 - Deutsche IMAPS-Konferenz 2005, 10. - 11.10.05, München Y1 - 2005 N1 - CD-ROM PB - IMAPS Deutschland CY - München ER - TY - PAT A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred T1 - Light-emitting semiconductor structure and optoelectronic component therefrom Y1 - 2015 ER - TY - CHAP A1 - Winkler, W. A1 - Borngräber, J. A1 - Heinemann, B. T1 - 60GHz and 76GHz Oscillators in µm SiGe:C BiCMOS Y1 - 2003 ER -