TY - CHAP A1 - Ilkov, N. A1 - Dernovsek, O. A1 - Bakalski, Winfried A1 - Weger, Peter A1 - Matz, R. A1 - Simbürger, Werner T1 - A 5 to 6.5 GHz LTCC Power Amplifier Module T2 - Proceedings of the 36th International Symposium on Microelectronics (IMAPS), Boston, USA, 16 - 20 Nov. 2003, IEEE Y1 - 2003 SN - 0-930815-71-8 PB - IMAPS CY - Washington, DC ER - TY - CHAP A1 - Mecking, S. A1 - Debski, Wojciech Andrzej T1 - A 0.35µm CMOS 1.9mA VCO-Core with Off-Chip Inductance on LTCC for System-in-a-Package Solutions of a 5-GHz-WLAN Transceiver Y1 - 2003 ER - TY - CHAP A1 - Vasylyev, Andriy A1 - Weger, Peter T1 - A Monolithic 2.4 GHz, 0.13 um CMOS Power Amplifier with 28 dBm Output Power and PAE at 1.2 V Supply Y1 - 2004 ER - TY - CHAP A1 - Vasylyev, Andriy A1 - Käll, Marcus A1 - Bakalski, Winfried A1 - Schmid, Alfons A1 - Simbürger, Werner A1 - Kitlinski, Krzysztof T1 - A 4.8-6 GHz IEEE 802.11a WLAN SiGe-Bipolar Power Amplifier with On-chip Output Matching T2 - Conference proceedings, 35th European Microwave Conference, Tuesday 4th, Wednesday 5th and Thursday 6th October 2005, Paris, France, part of 8th European Microwave Week (EuMW)], Bd. 3 Y1 - 2005 SP - 1427 EP - 1431 PB - Horizon House Publ. CY - London ER - TY - GEN A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - A Fully Integrated 3.3-3.8-GHz Power Amplifier With Autotransformer Balun Y1 - 2009 ER - TY - CHAP A1 - Meshcheriakov, Ievgenii A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - Fully monolithically integrated X-band power amplifier without external matching T2 - Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) 2010, Berlin, Institute of Technology Y1 - 2010 SN - 978-1-424-47905-4 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Gerlich, Stefan A1 - Weger, Peter T1 - A Narrow-band 8.7 GHz SiGe HBT LNA with a Passive Frequency Selective Feedback T2 - Frequenz N2 - This paper presents a low noise amplifier (LNA) with differential output using a passive frequency selective feedback. The introduced feedback stabilizes the amplifier at lower frequencies and improves the gain in the desired frequency band. The LNA consists of two stages. Additionally, a buffer at the output is added for measurements. The amplifier was implemented in a 0.35 μm SiGe technology. For measurements the LNA was bonded to a substrate. A peak gain of 28.1 dB and a minimum noise figure of 2.2 dB at a supply voltage of 3 V were achieved. KW - LNA KW - Radiofrequency Integrated Circuits Y1 - 2012 U6 - https://doi.org/10.1515/freq-2012-0037 SN - 0016-1136 SN - 2191-6349 VL - 66 IS - 7-8 SP - 183 EP - 188 ER - TY - GEN A1 - Gerlich, Stefan A1 - Weger, Peter T1 - Highly Efficient Packaged 11-13 GHz Power Amplifier in SiGe-Technology With 37.3% of PAE T2 - IEEE Microwave and Wireless Components Letters N2 - A power amplifier for a frequency range of 11-13 GHz that is incorporated in 0.35 μm SiGe-technology is presented in this letter. The two-stage push-pull amplifier uses monolithically integrated transformers for input and interstage matching and a monolithically integrated modified LC-balun as an output-matching network. For stabilization purposes and gain improvement in the operating frequency range a passive frequency selective feedback in parallel to the base-collector was introduced. The power amplifier is mounted on a 7 × 7 mm VQFN package. From a single 1.8 V voltage supply, the amplifier has a power-added efficiency of greater than 30% from 11.2 to 13 GHz with a maximum of 37.3% at 12.5 GHz. The maximum output power is 23.4 dBm (saturation), as measured in the continuous mode. KW - Power amplifier Y1 - 2013 U6 - https://doi.org/10.1109/LMWC.2013.2278285 SN - 1531-1309 VL - 23 IS - 10 SP - 539 EP - 541 ER - TY - GEN A1 - Steffens, S. A1 - Becker, C. A1 - Amkreutz, Daniel A1 - Klossek, André A1 - Kittler, Martin A1 - Chen, Y.-Y. A1 - Schnegg, Alexander A1 - Klingsporn, Max A1 - Abou-Ras, Daniel A1 - Lips, Klaus A1 - Rech, Bernd T1 - Impact of Dislocations and Dangling Bond Defects on The Electrical Performance of Crystalline Silicon Thin Films T2 - Applied Physics Letters Y1 - 2014 U6 - https://doi.org/10.1063/1.4890625 SN - 1077-3118 SN - 0003-6951 VL - 105 IS - 2 SP - 022108 ER - TY - CHAP A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Krause, M. A1 - Übensee, Hartmut ED - Cavallini, Anna ED - Estreicher, Stefan K. T1 - Carrier Transport on Dislocations T2 - International Conference on Defects in Semiconductors 2013, proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, Bologna, Italy, 21-26 July 2013 Y1 - 2014 SN - 978-0-7354-1215-6 U6 - https://doi.org/10.1063/1.4865599 PB - AIP Publishing CY - Melville, New York ER -