TY - CHAP A1 - Ilkov, N. A1 - Dernovsek, O. A1 - Bakalski, Winfried A1 - Weger, Peter A1 - Matz, R. A1 - Simbürger, Werner T1 - A 5 to 6.5 GHz LTCC Power Amplifier Module T2 - Proceedings of the 36th International Symposium on Microelectronics (IMAPS), Boston, USA, 16 - 20 Nov. 2003, IEEE Y1 - 2003 SN - 0-930815-71-8 PB - IMAPS CY - Washington, DC ER - TY - CHAP A1 - Mecking, S. A1 - Debski, Wojciech Andrzej T1 - A 0.35µm CMOS 1.9mA VCO-Core with Off-Chip Inductance on LTCC for System-in-a-Package Solutions of a 5-GHz-WLAN Transceiver Y1 - 2003 ER - TY - CHAP A1 - Vasylyev, Andriy A1 - Weger, Peter T1 - A Monolithic 2.4 GHz, 0.13 um CMOS Power Amplifier with 28 dBm Output Power and PAE at 1.2 V Supply Y1 - 2004 ER - TY - CHAP A1 - Vasylyev, Andriy A1 - Käll, Marcus A1 - Bakalski, Winfried A1 - Schmid, Alfons A1 - Simbürger, Werner A1 - Kitlinski, Krzysztof T1 - A 4.8-6 GHz IEEE 802.11a WLAN SiGe-Bipolar Power Amplifier with On-chip Output Matching T2 - Conference proceedings, 35th European Microwave Conference, Tuesday 4th, Wednesday 5th and Thursday 6th October 2005, Paris, France, part of 8th European Microwave Week (EuMW)], Bd. 3 Y1 - 2005 SP - 1427 EP - 1431 PB - Horizon House Publ. CY - London ER - TY - GEN A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - A Fully Integrated 3.3-3.8-GHz Power Amplifier With Autotransformer Balun Y1 - 2009 ER - TY - CHAP A1 - Meshcheriakov, Ievgenii A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - Fully monolithically integrated X-band power amplifier without external matching T2 - Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) 2010, Berlin, Institute of Technology Y1 - 2010 SN - 978-1-424-47905-4 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Gerlich, Stefan A1 - Weger, Peter T1 - A Narrow-band 8.7 GHz SiGe HBT LNA with a Passive Frequency Selective Feedback T2 - Frequenz N2 - This paper presents a low noise amplifier (LNA) with differential output using a passive frequency selective feedback. The introduced feedback stabilizes the amplifier at lower frequencies and improves the gain in the desired frequency band. The LNA consists of two stages. Additionally, a buffer at the output is added for measurements. The amplifier was implemented in a 0.35 μm SiGe technology. For measurements the LNA was bonded to a substrate. A peak gain of 28.1 dB and a minimum noise figure of 2.2 dB at a supply voltage of 3 V were achieved. KW - LNA KW - Radiofrequency Integrated Circuits Y1 - 2012 U6 - https://doi.org/10.1515/freq-2012-0037 SN - 0016-1136 SN - 2191-6349 VL - 66 IS - 7-8 SP - 183 EP - 188 ER - TY - GEN A1 - Gerlich, Stefan A1 - Weger, Peter T1 - Highly Efficient Packaged 11-13 GHz Power Amplifier in SiGe-Technology With 37.3% of PAE T2 - IEEE Microwave and Wireless Components Letters N2 - A power amplifier for a frequency range of 11-13 GHz that is incorporated in 0.35 μm SiGe-technology is presented in this letter. The two-stage push-pull amplifier uses monolithically integrated transformers for input and interstage matching and a monolithically integrated modified LC-balun as an output-matching network. For stabilization purposes and gain improvement in the operating frequency range a passive frequency selective feedback in parallel to the base-collector was introduced. The power amplifier is mounted on a 7 × 7 mm VQFN package. From a single 1.8 V voltage supply, the amplifier has a power-added efficiency of greater than 30% from 11.2 to 13 GHz with a maximum of 37.3% at 12.5 GHz. The maximum output power is 23.4 dBm (saturation), as measured in the continuous mode. KW - Power amplifier Y1 - 2013 U6 - https://doi.org/10.1109/LMWC.2013.2278285 SN - 1531-1309 VL - 23 IS - 10 SP - 539 EP - 541 ER - TY - GEN A1 - Steffens, S. A1 - Becker, C. A1 - Amkreutz, Daniel A1 - Klossek, André A1 - Kittler, Martin A1 - Chen, Y.-Y. A1 - Schnegg, Alexander A1 - Klingsporn, Max A1 - Abou-Ras, Daniel A1 - Lips, Klaus A1 - Rech, Bernd T1 - Impact of Dislocations and Dangling Bond Defects on The Electrical Performance of Crystalline Silicon Thin Films T2 - Applied Physics Letters Y1 - 2014 U6 - https://doi.org/10.1063/1.4890625 SN - 1077-3118 SN - 0003-6951 VL - 105 IS - 2 SP - 022108 ER - TY - CHAP A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Krause, M. A1 - Übensee, Hartmut ED - Cavallini, Anna ED - Estreicher, Stefan K. T1 - Carrier Transport on Dislocations T2 - International Conference on Defects in Semiconductors 2013, proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, Bologna, Italy, 21-26 July 2013 Y1 - 2014 SN - 978-0-7354-1215-6 U6 - https://doi.org/10.1063/1.4865599 PB - AIP Publishing CY - Melville, New York ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Pippel, Eckhard A1 - Hopfe, Sigrid T1 - Dislocations as Native Nanostructures - Electronic Properties T2 - Advances in Nano Research Y1 - 2014 U6 - https://doi.org/10.12989/anr.2014.2.1.001 SN - 2287-2388 SN - 2287-237X VL - 2 IS - 1 SP - 1 EP - 14 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Erfurth, Wilfried A1 - Pippel, Eckhard A1 - Sklarek, Kornelia A1 - Blumtritt, Horst A1 - Haehnel, Angelika A1 - Übensee, Hartmut T1 - On the Electronic Properties of a Single Dislocation T2 - Journal of Applied Physics Y1 - 2014 U6 - https://doi.org/10.1063/1.4876265 SN - 1089-7550 VL - 115 IS - 19 SP - 194303 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Pippel, Eckhard A1 - Erfurth, Wilfried T1 - Single Dislocations as Nanostructure Devices: Physics and Applications T2 - ECS Transactions Y1 - 2014 U6 - https://doi.org/10.1149/06411.0267ecst VL - 64 IS - 11 SP - 267 EP - 281 ER - TY - GEN A1 - Schade, Martin A1 - Mchedlidze, Teimuraz A1 - Kittler, Martin A1 - Leipner, Hartmut S. T1 - Light Induced Crystallization of an Amorphous Silicon Film Embedded Between Silicon Oxide Layers T2 - Physica Status Solidi B Y1 - 2014 U6 - https://doi.org/10.1002/pssb.201349143 VL - 251 IS - 2 SP - 439 EP - 445 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Klossek, Andre A1 - Kittler, Martin A1 - Oehme, Michael A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Electroluminescence of Germanium-LEDs on Silicon T2 - Physica Status Solidi C Y1 - 2014 U6 - https://doi.org/10.1002/pssc.201400056 VL - 11 IS - 11-12 SP - 1686 EP - 1691 ER - TY - CHAP A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Oehme, Michael A1 - Abrosimov, Nikolay V. A1 - Vyvenko, Oleg F. A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Luminescence from Germanium and Germanium on Silicon T2 - Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK Y1 - 2014 U6 - https://doi.org/10.4028/www.scientific.net/SSP.205-206.383 SN - 1662-9779 SP - 383 EP - 393 PB - Trans Tech Publ. CY - Durnten-Zurich [u.a.] ER - TY - CHAP A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Krause, Hans-Michael T1 - Charge Carrier Transport Along Grain Boundaries in Silicon T2 - Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK Y1 - 2014 U6 - https://doi.org/10.4028/www.scientific.net/SSP.205-206.293 SP - 293 EP - 298 PB - Trans Tech Publ. CY - Durnten-Zurich [u.a.] ER - TY - CHAP A1 - Krause, Christoph A1 - Arguirov, Tzanimir V. A1 - Mankovics, Daniel A1 - Krause, Hans-Michael A1 - Kittler, Martin T1 - Properties of D3-Like (0,93 eV) Luminescence in Solar Grade Silicon T2 - Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK Y1 - 2014 U6 - https://doi.org/10.4028/www.scientific.net/SSP.205-206.83 SP - 83 EP - 88 PB - Trans Tech Publ. CY - Durnten-Zurich [u.a.] ER - TY - GEN A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Arguirov, Tzanimir V. A1 - Mussler, Gregor A1 - Ye, Kaiheng A1 - Gollhofer, Martin A1 - Schmid, Marc A1 - Kaschel, Mathias A1 - Körner, Roman A1 - Kittler, Martin A1 - Buca, Dan A1 - Kasper, Erich A1 - Schulze, Jörg T1 - GeSn Heterojunction LEDs on Si Substrates T2 - IEEE Photonics Technology Letters Y1 - 2014 U6 - https://doi.org/10.1109/LPT.2013.2291571 SN - 1041-1135 VL - 26 IS - 2 SP - 187 EP - 189 ER - TY - GEN A1 - Oehme, Michael A1 - Widmann, Daniel A1 - Kostecki, Konrad A1 - Zaumseil, Peter A1 - Schwartz, Bernhard A1 - Gollhofer, Martin A1 - Körner, Roman A1 - Bechler, Stefan A1 - Kittler, Martin A1 - Kasper, Erich A1 - Schulze, Jörg T1 - GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates T2 - Optics Letters Y1 - 2014 U6 - https://doi.org/10.1364/OL.39.004711 SN - 1539-4794 VL - 39 IS - 16 SP - 4711 EP - 4714 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Krause, Michael A1 - Pippel, Eckhard T1 - Trap-Assisted Tunneling on Extended Defects in Tunnel Field-Effect Transistors T2 - Japanese Journal of Applied Physics Y1 - 2014 U6 - https://doi.org/10.7567/JJAP.53.04EC03 SN - 1347-4065 VL - 53 IS - 4S, 04EC03 SP - 1 EP - 6 ER - TY - GEN A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred A1 - Krause, Christoph A1 - Mankovics, Daniel T1 - About dislocation and oxygen related luminescence of Si around 0.8 eV T2 - Physica Status Solidi C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201400231 SN - 1610-1642 VL - 12 IS - 8 SP - 1077 EP - 1080 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Erfurth, Wilfried A1 - Haehnel, Angelika A1 - Übensee, Hartmut T1 - Strain and carrier transport along dislocations T2 - Physica Status Solidi C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201400298 SN - 1610-1642 VL - 12 IS - 8 SP - 1071 EP - 1076 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Kosina, Hans A1 - Lugstein, Alois A1 - Übensee, Hartmut T1 - Electronic Properties of Dislocations T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.141 SN - 1012-0394 VL - 242 SP - 141 EP - 146 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Saring, Philipp A1 - Arguirov, Tzanimir V. A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, J. A1 - Kittler, Martin T1 - Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.361 SN - 1012-0394 VL - 242 SP - 361 EP - 367 ER - TY - JOUR A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Bakalski, Winfried A1 - Simbürger, Werner T1 - Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer Y1 - 2005 ER - TY - CHAP A1 - Wipf, Christian A1 - Sorge, Roland A1 - Weger, Peter T1 - Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications T2 - Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011 N2 - A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time. Y1 - 2011 SN - 978-1-4244-8060-9 U6 - https://doi.org/10.1109/SIRF.2011.5719310 SP - 121 EP - 124 PB - IEEE CY - Piscataway ER - TY - CHAP A1 - Debski, Wojciech Andrzej A1 - Langmann, U. A1 - Weger, Peter A1 - Mayr, P. A1 - Matz, R. T1 - Keramische System-in-Package-Technologie für 5GHz-Transceivermodul T2 - Deutsche IMAPS-Konferenz 2005, 10. - 11.10.05, München Y1 - 2005 N1 - CD-ROM PB - IMAPS Deutschland CY - München ER - TY - PAT A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred T1 - Light-emitting semiconductor structure and optoelectronic component therefrom Y1 - 2015 ER - TY - CHAP A1 - Winkler, W. A1 - Borngräber, J. A1 - Heinemann, B. T1 - 60GHz and 76GHz Oscillators in µm SiGe:C BiCMOS Y1 - 2003 ER - TY - CHAP A1 - Bakalski, Winfried A1 - Scholtz, A. L. A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Simbürger, Werner A1 - Thüringer, R. A1 - Wohlmuth, H.-D. T1 - A Fully Integrated 7-18 GHz Power Amplifier with On-Chip Output Balun in 75 GHz-fT SiGe-Bipolar T2 - Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Toulouse, France, 29 - 20 Sept. 2003, IEEE Y1 - 2003 SN - 0-7803-7800-8 SP - 61 EP - 66 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - CHAP A1 - Bakalski, Winfried A1 - Vasylyev, Andriy A1 - Simbürger, Werner A1 - Scholtz, A. L. A1 - Thüringer, R. T1 - A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-bipolar power amplifier with 50 Ohm output T2 - Proceedings of the 29th European Solid-State Circuits Conference, Estoril, Portugal, 16 - 18 September 2003 Y1 - 2003 SN - 0-7803-7995-0 SP - 561 EP - 564 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers T2 - Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States Y1 - 2015 U6 - https://doi.org/10.1117/12.2080816 PB - International Society for Optics and Photonics ER - TY - JOUR A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - Monolithically integrated ?? frequency synthesiser with distributed reference spurs Y1 - 2008 ER - TY - JOUR A1 - Debski, Wojciech Andrzej A1 - Weger, Peter T1 - A Monolithically Integrated 23-24 GHz Tuned Down-Converter in 0.13 µm CMOS Y1 - 2007 ER - TY - JOUR A1 - Debski, Wojciech Andrzej A1 - Weger, Peter T1 - 5-6 GHz Low-Power, High Linearity Differential CMOS LNA with Robust ESD Protection Y1 - 2007 ER - TY - JOUR A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - 11 GHz CMOS frequency synthesiser Y1 - 2006 ER - TY - JOUR A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Bakalski, Winfried T1 - 17 GHz 50-60 mW Power Amplifiers in 0.13 um standard CMOS Y1 - 2006 ER - TY - JOUR A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Simbürger, Werner T1 - Ultra broadband 20.5-31 GHz monolithically integrated CMOS power amplifier Y1 - 2005 ER - TY - JOUR A1 - Bakalski, Winfried A1 - Vasylyev, Andriy T1 - A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-bipolar power amplifier with 50 Ohm output Y1 - 2004 ER - TY - JOUR A1 - Bakalski, Winfried A1 - Weger, Peter A1 - Ilkov, N. A1 - Scholtz, A. L. A1 - Dernovsek, N. A1 - Matz, R. A1 - Simbürger, Werner T1 - A 5-6.5GHz LTCC Power Amplifier Module with 0.3W at 2.4V in Si-bipolar Y1 - 2003 ER - TY - THES A1 - Solomko, Valentyn A. T1 - Monolithically integrated Sigma-Delta Frequency Synthesizers in 0.13 µm CMOS KW - Integrierte Schaltung KW - Frequenzsynthese KW - CMOS-Schaltung KW - Sigma-Delta-Wandler Y1 - 2008 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-4656 ER - TY - THES A1 - Debski, Wojciech Andrzej T1 - Multi-band adaptive WLAN receivers in 0.13 µm CMOS KW - Drahtloses lokales Netz KW - CMOS-Schaltung Y1 - 2007 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-3689 ER - TY - THES A1 - Vasylyev, Andriy T1 - Integrated RF power amplifier design in silicon based technologies KW - Siliciumbauelement KW - Radiofrequenzbereich KW - Verstärker KW - Leistungsverstärker KW - CMOS Y1 - 2006 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-202 ER - TY - JFULL ED - Seibt, Michael ED - Kittler, Martin T1 - Physica Status Solidi : C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201570099 N1 - Special Issue: 17th International Conference on Extended Defects in Semiconductors (EDS 2014) VL - 12 IS - 8 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Widmann, Daniel A1 - Gollhofer, Martin A1 - Körner, Roman A1 - Bechler, Stefan A1 - Fischer, Inga Anita A1 - Wendav, Torsten A1 - Kasper, Erich A1 - Schulze, Jörg A1 - Kittler, Martin T1 - Electroluminescence of GeSn/Ge MQW LEDs on Si substrate T2 - Optics Letters Y1 - 2015 U6 - https://doi.org/10.1364/OL40.003209 VL - 40 IS - 13 SP - 3209 EP - 3212 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Schmelz, Matthias A1 - Stolz, Ronny A1 - Pippel, Eckhard A1 - Übensee, Hartmut A1 - Kermann, M. A1 - Ortlepp, Thomas T1 - Single-Electron Transitions In One-Dimensional Native Nanostructures T2 - Journal of Physics: Conference Series Y1 - 2014 U6 - https://doi.org/10.1088/1742-6596/568/5/052024 SN - 1742-6588 VL - 568 SP - 052024 ER -