TY - GEN A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Mandal, Dipankar A1 - Seime, Bernd A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter T1 - Spin coated organic ferroelectric films for non volatile memories KW - organic KW - ferroelectric Y1 - 2011 ER - TY - GEN A1 - Koval, Yuri A1 - Lazareva, I. A1 - Müller, P. A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Friedrich, Daniel T1 - Field effect transistors on graphitized polymer surfaces KW - transistors KW - polymer Y1 - 2011 ER - TY - GEN A1 - Tallarida, Massimo A1 - Adelmann, Christoph A1 - Delabie, Annelies A1 - Elshocht, Sven van A1 - Caymax, Matty A1 - Schmeißer, Dieter T1 - Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum T2 - Applied physics letters Y1 - 2011 U6 - https://doi.org/10.1063/1.3615784 SN - 1077-3118 VL - 99 IS - 4 SP - 042906-1 EP - 042906-3 ER - TY - GEN A1 - Schwarzkopf, Jutta A1 - Dirsyte, R. A1 - Devi, A. A1 - Kwasniewski, A. A1 - Schmidbauer, M. A1 - Wagner, Gerd A1 - Michling, Marcel A1 - Schmeißer, Dieter A1 - Fornari, Robert T1 - Influence of Na on the structure of Bi4Ti3O12 films deposited by liquid-delivery spin MOCVD T2 - Thin solid films Y1 - 2011 SN - 0040-6090 VL - 519 IS - 17 SP - 5754 EP - 5759 ER - TY - GEN A1 - Tallarida, Massimo A1 - Weisheit, Martin A1 - Kolanek, Krzysztof A1 - Michling, Marcel A1 - Engelmann, Hans-Jürgen A1 - Schmeißer, Dieter T1 - Atomic layer deposition of nanolaminate oxide films on Si T2 - Journal of Nanoparticle Research Y1 - 2011 U6 - https://doi.org/10.1007/s11051-011-0319-x VL - 13 IS - 11 SP - 5975 EP - 5983 ER - TY - GEN A1 - Dudek, Piotr T. A1 - Lupina, Grzegorz A1 - Kozłowski, Grzegorz A1 - Zaumseil, Peter A1 - Bauer, Jakob A1 - Fursenko, Oksana A1 - Dabrowski, Jarek Marek A1 - Schmidt, R. A1 - Lippert, Gunther A1 - Müssig, Hans-Joachim A1 - Schröder, Thomas A1 - Schmeißer, Dieter A1 - Zschech, Ehrenfried T1 - Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3 T2 - Journal of Vacuum Science and Technology / B Y1 - 2011 SN - 2166-2754 VL - 29 IS - 1 ER - TY - GEN A1 - Janowitz, Christoph A1 - Scherer, Valentina A1 - Mohamed, Mansour A1 - Krapf, Alica A1 - Dwelk, Helmut A1 - Manzke, Recardo A1 - Galazka, Zbigniew A1 - Uecker, Reinhard A1 - Irmscher, Klaus A1 - Fornari, Robert A1 - Michling, Marcel A1 - Schmeißer, Dieter T1 - Experimental electronic structure of In2O3 and Ga2O3 T2 - New Journal of Physics Y1 - 2011 SN - 1367-2630 VL - 13 IS - 8 SP - 085014 ER - TY - GEN A1 - Mandal, Dipankar A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - Comment on "Preparation and Characterization of Silver-Poly(vinylidene fluoride) Nanocomposites:Formation of Piezoelectric Polymorph of Poly(vinylidene fluoride" Y1 - 2011 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Michling, Marcel A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - Atomic layer deposition reactor for fabrication of metal oxides Y1 - 2011 ER - TY - GEN A1 - Tallarida, Massimo A1 - Kukli, Kaupo A1 - Michling, Marcel A1 - Ritala, Mikko A1 - Leskelä, Markku A1 - Schmeißer, Dieter T1 - Substrate Reactivity Effects in the Atomic Layer Deposition of Aluminum Oxide from Trimethylaluminum on Ruthenium T2 - Chemistry of Materials Y1 - 2011 SN - 0897-4756 VL - 23 IS - 13 SP - 3159 EP - 3168 ER - TY - GEN A1 - Tallarida, Massimo A1 - Friedrich, Daniel A1 - Städter, Matthias A1 - Michling, Marcel A1 - Schmeißer, Dieter T1 - Growth of TiO2 with Thermal and Plasma Enhanced Atomic Layer Deposition T2 - Journal of Nanoscience and Nanotechnology Y1 - 2011 SN - 1533-4880 VL - 11 IS - 9 SP - 8049 EP - 8053 ER - TY - CHAP A1 - Gehrlich, Lukas A1 - Ohsiek, Susanne A1 - Klein, C. A1 - Geiß, M. A1 - Friedemann, Michael A1 - Kücher, Peter A1 - Schmeißer, Dieter T1 - Ultrathin TaN/Ta barrier modifications to fullfill next technology node requirements T2 - 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM 2011), Dresden, Germany, 8 - 12 May 2011 Y1 - 2011 SN - 978-1-4577-0503-8 U6 - https://doi.org/10.1109/IITC.2011.5940322 SP - 82 EP - 84 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Friedrich, Daniel A1 - Henkel, Karsten A1 - Richter, Matthias A1 - Schmeißer, Dieter T1 - Fullerenol as probed by Synchrotron X-Ray Photoemission and Absorption Spectroscopy Y1 - 2011 ER - TY - GEN A1 - Kukli, Kaupo A1 - Kemell, Marianna A1 - Puukilainen, Esa A1 - Aarik, Jaan A1 - Aidla, Aleks A1 - Sajavaara, Timo A1 - Laitinen, Mikko A1 - Tallarida, Massimo A1 - Sundqvist, Jonas A1 - Ritala, Mikko A1 - Leskelä, Markku T1 - Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen T2 - Journal of the Electrochemical Society N2 - Ru films were grown by atomic layer deposition in the temperature range of 275-350 degrees C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO(2), ZrO(2), and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20: 1 aspect ratio. ZrO(2) promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO(2) with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8-10 nm on any surface was necessary. Resistivities in the ranges of 30-60 and 14-16 mu Omega . cm were achieved for 4-6 and 10-15 nm thick films, respectively. Delamination became an issue in the Ru films grown to thicknesses about 10 nm and higher. KW - Atomic layer deposition (ALD) KW - Ruthenium Y1 - 2011 U6 - https://doi.org/10.1149/1.3533387 SN - 0013-4651 VL - 158 IS - 3 SP - D158 EP - D165 ER - TY - CHAP A1 - Mai, Andreas A1 - Dauderstädt, Ulrike A1 - Pahner, D. A1 - Krellmann, M. A1 - Schmeißer, Dieter A1 - Wagner, M. T1 - In situ determination of laser induced degradation of micro-mirror arrays T2 - International Students and Young Scientists Workshop Photonics and Microsystems, Cottbus, Germany, 8 - 10 June 2011 N2 - The Fraunhofer Institute for Photonic Microsystems (Fraunhofer IPMS) develops spatial light modulators (SLMs) based on arrays of tiltable micro mirrors on a semiconductor chip. Typical applications are pattern generation for deepUV-laser mask writing or structured illumination in microscopy. Development and optimization of such SLMs requires detailed knowledge of the device behaviour under operating conditions. Here, the flatness of each single mirror effects the image resolution and contrast of the generated pattern and is amongst others a characteristic property of SLMs. In this context a surface topography measurement under laser exposure (in situ) was designed. The interferometric setup uses the phase-shift principle and allows a resolution in z-direction in the single-digit nanometer range. During irradiation with UV-laser light at 248 nm (KrF) and energy densities of up to 20 mJ/cm2 the change in single micro-mirrors topography was detected in situ. Measurementswith varying pulse energies were carried out to identify an impacton the device performance. In general, the setup is neither limited to a specific illumination wavelength nor to micro-mirrors as structures under test. KW - micro-mirror arrays KW - laser induced degradation Y1 - 2011 SN - 978-1-4577-1651-5 U6 - https://doi.org/10.1109/STYSW.2011.6155850 SP - 84 EP - 88 PB - IEEE CY - Piscataway, NJ ER - TY - THES A1 - Kraatz, Matthias T1 - Studying the effect of Cu microstructure on electromigration reliability using statistical simulation KW - Electromigration KW - Simulation KW - Grain growth KW - Statistics Y1 - 2011 N1 - Dissertation wurde an der University of Texas in Austin eingereicht, Teilaspekte wurden an der BTU bearbeitet ER - TY - THES A1 - Karavaev, Konstantin T1 - In-situ Atomic Layer Deposition growth of Hf-oxide N2 - We have grown HfO2 on Si(001) by atomic layer deposition (ALD) using HfCl4, TEMAHf, TDMAHf and H2O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and x-ray absorption spectroscopy. We observed the changes occurring in the Si2p, O1s, Hf4f, Hf4d, and Cl2p (for HfCl4 experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO2. The investigation was carried out in-situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages of the in-situ approach in comparison to ex-situ experiments. The study provides to follow the evolution of the important properties of HfO2: contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that the in-situ XPS approach for ALD gives much more information than ex-situ experiments. KW - Atomic layer deposition KW - ALD KW - X-ray photoelectron spectroscopy KW - XPS KW - Hf=2 Y1 - 2011 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-22617 UR - http://opus.kobv.de/btu/volltexte/2011/2261/ ER - TY - THES A1 - Dudek, Piotr T. T1 - Atomic scale engineering of HfO2–based dielectrics for future DRAM applications N2 - Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO2 thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba added HfO2 (BaHfO3) films and Ti added BaHfO3 (BaHf0.5Ti0.5O3) layers are promising candidates for future generation of state of the art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO3 (k~38) and BaHf0.5Ti0.5O3 (k~90) with respect to monoclinic HfO2 (k~19). Meanwhile the CET values scaled down to 1 nm for BaHfO3 and ~0.8 nm for BaHf0.5Ti0.5O3 with respect to HfO2 (CET=1.5 nm). The Hf4+ ions substitution in BaHfO3 by Ti4+ ions led to a significant decrease of thermal budget from 900°C for BaHfO3 to 700°C for BaHf0.5Ti0.5O3. Future studies need to focus on the use of appropriate metal electrodes (high work function) and on film deposition process (homogeneity) for better current leakage control. KW - Dielectrics KW - High-k materials KW - Atomic Scale Engineering KW - HfO2-based materials KW - XPS Y1 - 2011 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-22775 UR - http://opus.kobv.de/btu/volltexte/2011/2277/ ER - TY - CHAP A1 - Friedrich, Daniel A1 - Koval, Yuri A1 - Müller, Paul A1 - Schmeißer, Dieter T1 - Electronic structure of thin spin-coated polyimide layers T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46 N2 - The conductivity of polyimide layers can be modified by several orders of magnitude by ion beam radiation. In order to understand the electronic structure of the pure polyimide before ion beam modification we focus in our preliminary experiments on spectroscopic investigations of thin as prepared polyimide films. The films were made by spin coating from a PMDA/ODA solution with subsequent vacuum annealing at 350°C. The layer thickness can be controlled by changing the concentration of PMDA/ODA in the solution realizing a thickness down to 3.5nm. For the characterization of the as prepared thin polyimide films the techniques NEXAFS, ResPES, XPS and CIS were applied at the U49/2-PGM2 beam line of Bessy II, Berlin. Our data including the valence band, core levels and absorption spectrum were compared with theoretical LCAO calculations. Based on these results we are able to attribute all spectral features to the specific atomic bonds in the molecule. Y1 - 2011 UR - http://www.dpg-verhandlungen.de/year/2011/conference/dresden/part/ds/session/63/contribution/3 SN - 0420-0195 SP - S. 311 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Hoffmannbeck, David A1 - Richter, Matthias A1 - Städter, Matthias A1 - Paloumpa, Ioanna A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - Spectroscopic and microscopic characterization of potential catalysts for the hydrogenation of CO2 T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46 N2 - The reduction of CO2 emissions is a general demand of the society in order to avoid irreversible climate changes. We are investigating potential catalysts for the hydrogenation of CO2 in particular for its application in the so called oxyfuel combustion process. In order to understand the catalytic behavior of the investigated materials we use the techniques X-Ray Photoemission (XPS) and -absorption (XAS) Spectroscopy as well as X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The prospective of our work is to figure out the electronic and structural properties of the material and to optimize proper catalysts or design new ones for best catalytic activity. Beside the spectro-microscopic investigations the catalysts are tested under Sabatier reaction conditions in terms of activity, stability and sensitivity against poisoning. In our preliminary work we constructed a Sabatier reactor system with analytical parts based on infrared absorption and mass spectroscopy modules. First spectroscopic and catalytic results achieved on a commercially available Ru/Al2O3 catalyst will be presented. Y1 - 2011 UR - http://www.dpg-verhandlungen.de/year/2011/conference/dresden/part/o/session/60/contribution/123 SN - 0420-0195 SP - S. 483 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER -