TY - JOUR A1 - Müller, Klaus A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter A1 - Henkel, Karsten T1 - Organic thin film transistors with polymer high-k dielectric insulator KW - high-k Y1 - 2006 ER - TY - CHAP A1 - Henkel, Karsten A1 - Burkov, Yevgen A1 - Bergholz, Matthias A1 - Karavaev, Konstantin A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Schmeißer, Dieter T1 - Al-Oxynitride as a buffer layer for high-k dielectrics T2 - Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin) KW - buffer layer KW - high-k KW - dielectric Y1 - 2008 SP - 161 EP - 162 ER - TY - JOUR A1 - Sohal, Rakesh A1 - Lupina, Grzegorz A1 - Lippert, Gunther A1 - Wenger, Christian A1 - Seifarth, Olaf A1 - Schröder, Thomas A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Interface chemistry of high-k PrxAl2-xO3 (x=2-0) dielectrics on TiN for dynamic random access memory applications KW - high-k KW - dielectric KW - random Y1 - 2008 ER - TY - THES A1 - Henkel, Karsten T1 - Electrical Investigations on Praseodymium Oxide/Aluminum Oxynitride Containing Metal-Insulator-Semiconductor Stacks and on Metal-Ferroelectric-Insulator-Semiconductor Structures Consisting of Poly[vinylidene fluoride trifluoroethylene] N2 - In this thesis electrical characterizations on metal-insulator-semiconductor (MIS) and metal-ferroelectric-insulator-semiconductor (MFIS) stacks are presented. The results are discussed in terms of the increase of the performance of these stacks in order to optimize the characteristics of devices like the field effect transistor (FET) for logic applications and the ferroelectric field effect transistor (FeFET) for non-volatile and non-destructive readout memory applications. Therefor, two material classes are investigated. Firstly, this work focuses on praseodymium oxide (PrxOy) films as a high-kmaterial on silicon (Si) and silicon carbide in MISsamples. In particular the improvement of the performance by the introduction of an aluminum oxynitride buffer layer, which acts as an interdiffusion barrier and reduces the leakage current, the interface state density and the equivalent oxide thickness, is demonstrated. Secondly, in this work the very attractive ferroelectric material poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is introduced in MFIS stacks on Si. The way of successive improvements of the MFIS stack is extensively discussed. Here, the optimization of the preparation of the samples as well as of the layer parameters in the sequence of the MFIS stacks is depicted. An improved long time stability of the memory functionof the MFIS stack with a partially optimized layer sequence is exhibited. The electrical results are correlated to spectroscopic findings on both material systems. Strong interfacial reactions between the PrxOy and Si as well as between the aluminum electrode and the P[VDF/TrFE] layer are observed. For both systems the importance of a buffer layer is discussed and its optimization is addressed, too. On both systems a very nice, as consistent, chain of improvements is shown caused by the spectroscopic controlled preparation combined with electrical measurements in order to obtain the functionality of a given material system. KW - Pr2O3 KW - P(VDF-TrFE) KW - capacitance-voltage KW - conductance-voltage KW - current-voltage KW - dielectric properties KW - high-k KW - feFET Y1 - 2009 SN - 978-3-8322-8404-6 PB - Shaker CY - Aachen ER - TY - THES A1 - Torche, Mohamed T1 - Praseodymium oxide as dielectric in MIS stacks KW - high-k KW - Pr2O3 KW - X-ray photoelectron spectroscopy KW - XPS Y1 - 2006 CY - Cottbus ER -