TY - CHAP A1 - Brizzi, Simone A1 - Tallarida, Massimo A1 - Adelmann, Christoph A1 - Ragnarsson, Lars-Åke A1 - Elshocht, Sven van A1 - Schmeißer, Dieter T1 - Structural changes in HfO2 thin films: thickness and doping dependence T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - In this work we show results regarding MOCVD and ALD HfO2 as well as Al-doped HfO2. We use Synchrotron Radiation Photoemission Spectroscopy (SRPES) to determine Hf/O atomic ratios and X-ray Absorption Spectroscopy (XAS) to investigate the electronic properties related to their crystallization. MOCVD films are synthesized at temperatures ranging from ambient to 400∘C and show structures from completely amorphous to monoclinic. ALD films are amorphous as deposited, and can crystallize after post-deposition anneal depending on the percentage of Al-doping. We discuss PES results in order to determine how close to stoichiometry the Hf/O atomic ratios of the films are, as well as the doping level. From XAS data, instead, we can point out how orbital hybridizations are related to structural and physical properties. KW - Structure KW - HfO2 thin films KW - thickness dependence KW - doping dependence KW - atomic layer deposition (ALD) Y1 - 2014 UR - http://www.dpg-verhandlungen.de/year/2014/conference/dresden/part/ds/session/49/contribution/9?lang=en SN - 0420-0195 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER -