TY - GEN A1 - Xie, Yufang A1 - Birowska, Magdalena A1 - Funk, Hannes S. A1 - Fischer, Inga Anita A1 - Schwarz, Daniel A1 - Schulze, Jörg A1 - Zeng, Yu-Jia A1 - Helm, Manfred A1 - Zhou, Shengqiang A1 - Prucnal, Slawomir T1 - Tuning of Curie temperature in Mn5Ge3 films T2 - Journal of Applied Physics Y1 - 2022 U6 - https://doi.org/10.1063/5.0066717 SN - 1089-7550 VL - 131 SP - 105102-1 EP - 105102-8 ER - TY - GEN A1 - Xie, Yufang A1 - Li, Zichao A1 - Begeza, Viktor A1 - Funk, Hannes S. A1 - Fischer, Inga Anita A1 - Zeng, Yu-Jia A1 - Helm, Manfred A1 - Zhou, Shengqiang A1 - Prucnal, Slawomir T1 - Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3 T2 - Semiconductor Science and Technology N2 - Mn5Ge3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn5Ge3 layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) method. We investigate the influence of the substrate orientation, Mn layer thickness and annealing parameters on the crystallographic orientation and magnetization of Mn5Ge3. It is shown that after millisecond range SPE, Mn5Ge3 films always have a preferred (100) orientation whether grown on Ge (001) or (111) substrates, which determines the orientation of the magnetization easy axis lying in the film plane along c axis independent of the layer thickness. The Curie temperature of Mn5Ge3 weakly depends on fabrication parameters. KW - solid phase epitaxy KW - flash lamp annealing KW - ferromagnetic film KW - spintronic KW - fabrication parameter KW - structural property Y1 - 2022 UR - https://iopscience.iop.org/article/10.1088/1361-6641/ac6689 U6 - https://doi.org/10.1088/1361-6641/ac6689 SN - 1361-6641 VL - 37 IS - 6 SP - 1 EP - 8 ER - TY - GEN A1 - Steuer, Oliver A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Schulze, J. A1 - Maczko, H. A1 - Kudrawiec, Robert A1 - Fischer, Inga Anita A1 - Heller, R. A1 - Hübner, R. A1 - Khan, M. M. A1 - Georgiev, Yordan M. A1 - Zhou, Shengqiang A1 - Helm, M. A1 - Prucnal, Slawomir T1 - Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting T2 - Journal of Physics: Condensed Matter Y1 - 2022 U6 - https://doi.org/10.1088/1361-648X/aca3ea SN - 1361-648X VL - 35 IS - 5 ER - TY - GEN A1 - Wen, Shuyu A1 - Shaikh, Mohd Saif A1 - Steuer, Oliver A1 - Prucnal, Slawomir A1 - Grenzer, Jörg A1 - Hübner, René A1 - Turek, Marcin A1 - Pyszniak, Krzysztof A1 - Reiter, Sebastian A1 - Fischer, Inga Anita A1 - Georgiev, Yordan M. A1 - Helm, Manfred A1 - Wu, Shaoteng A1 - Luo, Jun-Wei A1 - Zhou, Shengqiang A1 - Berencén, Yonder T1 - Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques T2 - Applied Physics Letters N2 - GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology. KW - Electric currents KW - Semiconductors KW - Photodetectors KW - C-MOS KW - Electromagnetic radiation detectors KW - Crystal structure KW - Alloys KW - Ion implantation KW - Ion beam analysis Y1 - 2023 UR - https://pubs.aip.org/aip/apl/article/123/8/081109/2907921 U6 - https://doi.org/10.1063/5.0166799 SN - 0003-6951 VL - 123 IS - 8 SP - 1 EP - 7 ER -