TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Niu, Gang A1 - Jhang, Jin-Hao A1 - Schäfer, Andreas A1 - Zaumseil, Peter A1 - Bäumer, Marcus A1 - Schröder, Thomas T1 - Temperature dependent reduction of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111): A combined TPD, XRD, XPS and Raman study T2 - Journal of Physical Chemistry : C Y1 - 2013 U6 - https://doi.org/10.1021/jp4082867 SN - 1932-7455 VL - 117 IS - 47 SP - 24851 EP - 24857 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas T1 - X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates T2 - Journal of Applied Crystallography Y1 - 2013 SN - 0021-8898 VL - 46 IS - 4 SP - 868 EP - 873 ER - TY - GEN A1 - Niu, Gang A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Zöllner, Marvin Hartwig A1 - Dabrowski, Jarek Marek A1 - Schroeder, Thomas T1 - Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring T2 - Applied Physics Letters Y1 - 2013 VL - 102 SP - 011906-1 EP - 011906-5 ER - TY - GEN A1 - Niu, Gang A1 - Zöllner, Marvin Hartwig A1 - Zaumseil, Peter A1 - Pouliopoulos, A. A1 - d'Acapito, F. A1 - Schröder, Thomas A1 - Boscherini, F. T1 - X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2-xO3 (x=0-2) films on Si (111) T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 113 IS - 4 SP - 043504 EP - 043506 ER - TY - CHAP A1 - Seifarth, Olaf A1 - Walczyk, Christian A1 - Lupina, Grzegorz A1 - Zaumseil, Peter A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim A1 - Schroeder, Thomas T1 - The electronic band diagram of thin PrO2(111) / Pr-silicate buffers on Si(111) and its relevance to dielectric properties T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44 N2 - Thin dielectric buffers of cubic PrO2(111) on Si(111) are ideally suited to integrate Ge onto Si by moderating the lattice mismatch between the materials. The leakage current across this dielectric buffer is strongly influenced by the electronic band diagram and defects inside the band gap. Therefore, we measured the band offsets, band gaps and defect positions by means of synchrotron radiation based photoemission spectroscopy techniques (XPS and XAS) with special emphasis on the Pr-silicate interface. In a next step we compare the spectroscopic data with information from dielectric studies, based on temperature dependent leakage current studies. We observe a close relation between dielectric properties and the electronic structure. Y1 - 2009 UR - http://www.dpg-verhandlungen.de/year/2009/conference/dresden/part/df/session/6/contribution/5 SN - 0420-0195 SP - S. 136 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Oehme, Michael A1 - Widmann, Daniel A1 - Kostecki, Konrad A1 - Zaumseil, Peter A1 - Schwartz, Bernhard A1 - Gollhofer, Martin A1 - Körner, Roman A1 - Bechler, Stefan A1 - Kittler, Martin A1 - Kasper, Erich A1 - Schulze, Jörg T1 - GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates T2 - Optics Letters Y1 - 2014 U6 - https://doi.org/10.1364/OL.39.004711 SN - 1539-4794 VL - 39 IS - 16 SP - 4711 EP - 4714 ER - TY - GEN A1 - Zaumseil, Peter A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Schröder, Thomas A1 - Tillack, Bernd T1 - Heteroepitaxial Growth of Ge on compliant strained nano-structured Si lines and dots on (001) SOI substrates T2 - Thin Solid Films Y1 - 2014 SN - 0040-6090 VL - 557 SP - 50 EP - 54 ER - TY - GEN A1 - Di Gaspare, L. A1 - Sabbagh, D. A1 - De Seta, Monica A1 - Sodo, A. A1 - Wirths, S. A1 - Buca, Dan A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Capellini, Giovanni T1 - A very low temperature epi-cleaning process for Ge / GeSn heterostructures T2 - Journal of Applied Physics Y1 - 2015 U6 - https://doi.org/10.1063/1.4906616 SN - 1089-7550 VL - 117 SP - 045306 ER - TY - GEN A1 - Taoka, Noriyuki A1 - Asano, Takanori A1 - Yamaha, Takashi A1 - Terashima, Tatsuya A1 - Nakatsuka, Osamu A1 - Costina, Ioan A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Zaima, Shigeaki A1 - Schroeder, Thomas T1 - Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4908121 SN - 1077-3118 VL - 106 SP - 061107-1 EP - 061107-5 ER - TY - GEN A1 - Chahine, Gilbert A. A1 - Zöllner, Marvin Hartwig A1 - Richard, Marie-Ingrid A1 - Subhajit, G. A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Schroeder, Thomas A1 - Schülli, Tobias U. T1 - Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitters Microstructures by Quick X-ray Nano-diffraction Microscopy T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4909529 SN - 1077-3118 VL - 106 SP - 071902-1 EP - 071902-4 ER - TY - GEN A1 - Wirths, S. A1 - Troitsch, R. A1 - Mussler, G. A1 - Stoica, T. A1 - Hartmann, J.-M. A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Mantl, Siegfried A1 - Buca, Dan T1 - Ternary and Quaternary Ni(Si)GeSn Contact Formation for highly strained Ge p- and n-MOSFETs T2 - Semiconductor Science and Technology Y1 - 2015 U6 - https://doi.org/10.1088/0268-1242/30/5/055003 SN - 0268-1242 VL - 30 IS - 5 SP - 055003 ER - TY - GEN A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Oberbeck, Lars A1 - Schroeder, Uwe A1 - Costina, Ioan A1 - Lupina, Grzegorz A1 - Ratzke, Markus A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films T2 - Journal of the electrochemical society Y1 - 2008 U6 - https://doi.org/10.1149/1.2875741 SN - 1945-7111 VL - 155 IS - 5 SP - G97 EP - G114 ER - TY - GEN A1 - Zaumseil, Peter A1 - Yamamoto, Yuji A1 - Schubert, M. A1 - Capellini, Giovanni A1 - Skibitzki, Oliver A1 - Zöllner, Marvin Hartwig A1 - Schroeder, Thomas T1 - Tailoring the strain in Si nano-structures for defect-free epitaxial Ge overgrowth T2 - Nanotechnology Y1 - 2015 U6 - https://doi.org/10.1088/0957-4484/26/35/355707 SN - 1361-6528 VL - 26 IS - 35 SP - 355707 ER - TY - CHAP A1 - Goryachko, Andriy A1 - Beuckert, Guido A1 - Zaumseil, Peter A1 - Wagner, Guenter A1 - Schmeißer, Dieter T1 - Investigations of Pr2O3 growth modes on 4H-SiC(0001) Surfaces T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - The SiC is suited especially well for high power and high voltage semiconductor devices. In order to increase the reliability against electrical breakdown of metal-insulator-semiconductor (MIS) structures, one needs to use the insulator with possibly higher dielectric constant. Pr2O3 is shown to posses a much higher dielectric constant (equals 30) than traditionally used SiO2. Therefore, Pr2O3/SiC is an excellent material combination for high voltage MIS devices. The 4H-SiC(0001) substrates are characterised with scanning tunneling microscopy, while the Pr2O3 surface - with atomic force microscopy technique. We show distinct growth modes of Pr2O3 film, such as 3D and layer by layer growth. The crystalline structure and film thickness are determined by X-ray diffraction and its chemical composition by X-ray photoelectron spectroscopy. The Pr2O3 film characteristics are optimised for high-quality MIS structures in terms of lateral uniformity, low interface states density and leakage current, as well as physical integrity. KW - SiC KW - Pr2O3 KW - X-ray photoelectron spectroscopy (XPS) KW - X-Ray diffraction Y1 - 2004 UR - http://www.dpg-verhandlungen.de/year/2004/conference/regensburg/part/ds/session/9/contribution/4?lang=de SN - ISSN 0420-0195 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Wendav, Torsten A1 - Fischer, Inga Anita A1 - Virgilio, Michele A1 - Capellini, Giovanni A1 - Oliveira, F. A1 - Cerqueira, M. F. A1 - Benedetti, Alessandro A1 - Chiussi, Stefano A1 - Zaumseil, Peter A1 - Schwartz, Bernhard A1 - Busch, Kurt A1 - Schulze, J. T1 - Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling T2 - Physical Review B 94 Y1 - 2016 U6 - https://doi.org/10.1103/PhysRevB.94.245304 VL - 94 IS - 24 SP - 245304 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Lupina, Grzegorz A1 - Niermann, Tore A1 - Salvalaglio, Marco A1 - Marzegalli, Anna A1 - Schubert, Markus Andreas A1 - Zaumseil, Peter A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Montalenti, Francesco A1 - Xie, Ya-Hong A1 - Schröder, Thomas T1 - Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns T2 - ACS Applied Materials and Interfaces Y1 - 2016 SN - 1944-8252 VL - 8 IS - 3 SP - 2017 EP - 2026 ER - TY - GEN A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Skibitzki, Oliver A1 - Capellini, Giovanni A1 - Schröder, Thomas T1 - Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon T2 - Solid State Phenomena Y1 - 2016 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.402 SN - 1662-9779 SN - 0377-6883 VL - 242 SP - 402 EP - 407 ER - TY - GEN A1 - Taoka, Noriyuki A1 - Capellini, Giovanni A1 - Driesch, Nils von den A1 - Buca, Dan A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Klesse, Wolfgang Matthias A1 - Montanari, Michele A1 - Schröder, Thomas T1 - Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer T2 - Applied Physics Express Y1 - 2016 U6 - https://doi.org/10.7567/APEX.9.031201 SN - 1882-0786 SN - 1882-0778 VL - 9 IS - 3 SP - 031201 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Schubert, Markus Andreas A1 - Niermann, Tore A1 - Zaumseil, Peter A1 - Katzer, Jens A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Xie, Ya-Hong A1 - Känel, Hans von A1 - Schröder, Thomas T1 - Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers T2 - Scientific Reports Y1 - 2016 U6 - https://doi.org/10.1038/srep22709 SN - 2045-2322 VL - 6 SP - 22709 ER - TY - GEN A1 - Engelhard, M. A1 - Klemp, C. A1 - Behringer, M. A1 - Rudolph, A. A1 - Skibitzki, Oliver A1 - Zaumseil, Peter A1 - Schröder, Thomas T1 - Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth T2 - Journal of Applied Physics Y1 - 2016 U6 - https://doi.org/10.1063/1.4955333 SN - 1089-7550 SN - 0021-8979 VL - 120 IS - 4 SP - 045301 ER -