TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Dabrowski, Jarek Marek A1 - Zaumseil, Peter A1 - Giussani, A. A1 - Schubert, Markus Andreas A1 - Lupina, Grzegorz A1 - Wilkens, Henrik A1 - Wollschläger, Joachim A1 - Bäumer, Marcus A1 - Reichling, M. A1 - Schröder, Thomas T1 - On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems T2 - Physical Review Y1 - 2012 UR - http://link.aps.org/doi/10.1103/PhysRevB.85.035302 U6 - https://doi.org/10.1103/PhysRevB.85.035302 SN - 1098-0121 VL - 85 IS - 3 SP - 035302 EP - 035311 ER - TY - GEN A1 - Pieper, H. H. A1 - Derks, C. A1 - Zöllner, Marvin Hartwig A1 - Olbrich, R. A1 - Troeger, L. A1 - Schroeder, Thomas A1 - Neumann, M. A1 - Reichling, M. T1 - Morphology and nanostructure of CeO2(111) surfaces of single crystals and of Si(111) supported ceria films, T2 - Physical Chemistry Chemical Physics Y1 - 2012 U6 - https://doi.org/10.1039/C2CP42733H SN - 1463-9084 VL - 14 IS - 44 SP - 15361 EP - 15368 ER - TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Zaumseil, Peter A1 - Wilkens, Henrik A1 - Gevers, Sebastian A1 - Wollschläger, Joachim A1 - Bäumer, Marcus A1 - Xie, Ya-Hong A1 - Niu, Gang A1 - Schroeder, Thomas T1 - Stoichiometry-structure correlation of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111) T2 - Journal of Crystal Growth Y1 - 2012 SN - 0022-0248 VL - 355 IS - 1 SP - 159 EP - 165 ER - TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Niu, Gang A1 - Jhang, Jin-Hao A1 - Schäfer, Andreas A1 - Zaumseil, Peter A1 - Bäumer, Marcus A1 - Schröder, Thomas T1 - Temperature dependent reduction of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111): A combined TPD, XRD, XPS and Raman study T2 - Journal of Physical Chemistry : C Y1 - 2013 U6 - https://doi.org/10.1021/jp4082867 SN - 1932-7455 VL - 117 IS - 47 SP - 24851 EP - 24857 ER - TY - GEN A1 - Wilkens, Henrik A1 - Rodewald, Jari A1 - Gevers, Sebastian A1 - Zöllner, Marvin Hartwig A1 - Schroeder, Thomas A1 - Wollschläger, Joachim T1 - Surface morphology of ultra-thin hex-Pr2O3 films on Si(111) T2 - Journal of Physics : D, Applied Physics Y1 - 2013 SN - 0022-3727 VL - 46 IS - 28 SP - 285306 EP - 285313 ER - TY - GEN A1 - Niu, Gang A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Zöllner, Marvin Hartwig A1 - Dabrowski, Jarek Marek A1 - Schroeder, Thomas T1 - Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring T2 - Applied Physics Letters Y1 - 2013 VL - 102 SP - 011906-1 EP - 011906-5 ER - TY - GEN A1 - Niu, Gang A1 - Zöllner, Marvin Hartwig A1 - Zaumseil, Peter A1 - Pouliopoulos, A. A1 - d'Acapito, F. A1 - Schröder, Thomas A1 - Boscherini, F. T1 - X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2-xO3 (x=0-2) films on Si (111) T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 113 IS - 4 SP - 043504 EP - 043506 ER - TY - GEN A1 - Wilkens, Henrik A1 - Schuckmann, O. A1 - Oelke, R. A1 - Gevers, Sebastian A1 - Schaefer, A. A1 - Bäumer, Marcus A1 - Zöllner, Marvin Hartwig A1 - Schroeder, Thomas A1 - Wollschläger, Joachim T1 - Stabilization of the ceria Jota-phase Ce7O12 surface on Si(111) T2 - Applied Physics Letters Y1 - 2013 SN - 0003-6951 VL - 102 IS - 11 SP - 111602-1 EP - 111602-3 ER - TY - GEN A1 - Wilkens, Henrik A1 - Schuckmann, O. A1 - Oelke, R. A1 - Gevers, Sebastian A1 - Reichling, M. A1 - Schaefer, A. A1 - Bäumer, Marcus A1 - Zöllner, Marvin Hartwig A1 - Niu, Gang A1 - Schroeder, Thomas A1 - Wollschläger, Joachim T1 - Structural transitions of epitaxial ceria films on Si(111) T2 - Physical Chemistry Chemical Physics Y1 - 2013 SN - 1463-9084 VL - 15 IS - 42 SP - 18589 EP - 18599 ER - TY - GEN A1 - Olbrich, R. A1 - Wilkens, Henrik A1 - Oelke, R. A1 - Wollschläger, Joachim A1 - Zöllner, Marvin Hartwig A1 - Schroeder, Thomas A1 - Reichling, M. T1 - A well-structured metastable ceria surface T2 - Applied Physics Letters Y1 - 2014 U6 - https://doi.org/10.1063/1.4866667 VL - 104 IS - 8 SP - 081910-1 EP - 081910-4 ER - TY - GEN A1 - Chahine, Gilbert A. A1 - Zöllner, Marvin Hartwig A1 - Richard, Marie-Ingrid A1 - Subhajit, G. A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Schroeder, Thomas A1 - Schülli, Tobias U. T1 - Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitters Microstructures by Quick X-ray Nano-diffraction Microscopy T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4909529 SN - 1077-3118 VL - 106 SP - 071902-1 EP - 071902-4 ER - TY - GEN A1 - Wilkens, Henrik A1 - Spieß, Wanja A1 - Zöllner, Marvin Hartwig A1 - Niu, Gang A1 - Schroeder, Thomas A1 - Wollschläger, Joachim T1 - Post deposition annealing of epitaxial Ce1−xPrxO2−δ films grown on Si(111) T2 - Physical Chemistry Chemical Physics Y1 - 2015 U6 - https://doi.org/10.1039/C6CP01553K SN - 1463-9084 SN - 1463-9076 VL - 17 SP - 9991 EP - 9996 ER - TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Richard, Marie-Ingrid A1 - Chahine, Gilbert A. A1 - Zaumseil, Peter A1 - Reich, Christian A1 - Capellini, Giovanni A1 - Montalenti, Francesco A1 - Marzegalli, Anna A1 - Xie, Ya-Hong A1 - Schülli, Tobias U. A1 - Häberlen, Maik A1 - Storck, Peter A1 - Schroeder, Thomas T1 - Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/am508968b SN - 1944-8252 VL - 7 IS - 17 SP - 9031 EP - 9037 ER - TY - GEN A1 - Zaumseil, Peter A1 - Yamamoto, Yuji A1 - Schubert, M. A1 - Capellini, Giovanni A1 - Skibitzki, Oliver A1 - Zöllner, Marvin Hartwig A1 - Schroeder, Thomas T1 - Tailoring the strain in Si nano-structures for defect-free epitaxial Ge overgrowth T2 - Nanotechnology Y1 - 2015 U6 - https://doi.org/10.1088/0957-4484/26/35/355707 SN - 1361-6528 VL - 26 IS - 35 SP - 355707 ER - TY - GEN A1 - Tarnawska, Lidia Lupina A1 - Zöllner, Marvin Hartwig A1 - Niermann, T. A1 - Dietrich, Burkhart A1 - Capellini, Giovanni A1 - Thapa, Sarad A1 - Häberlen, Maik A1 - Lehmann, M. A1 - Storck, Peter A1 - Schröder, Thomas T1 - Zero Lattice Mismatch and Truly Single Crystalline ScN Buffer Layers for GaN Growth on Silicon T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4935856 SN - 1077-3118 SN - 0003-6951 VL - 107 IS - 20 SP - 201907 ER - TY - GEN A1 - Richard, Marie-Ingrid A1 - Zöllner, Marvin Hartwig A1 - Chahine, Gilbert A. A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Häberlen, Maik A1 - Storck, Peter A1 - Schülli, Tobias U. A1 - Schröder, Thomas T1 - Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nano-Diffraction T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/acsami.5b08645 SN - 1944-8244 SN - 1944-8252 VL - 7 IS - 48 SP - 26696 EP - 26700 ER - TY - GEN A1 - Sana, Prabha A1 - Tetzner, Henriette A1 - Dabrowski, Jarek Marek A1 - Tarnawska, Lidia Lupina A1 - Costina, Ioan A1 - Thapa, Sarad A1 - Storck, Peter A1 - Schröder, Thomas A1 - Zöllner, Marvin Hartwig T1 - Growth of ScN(111) on Sc₂O₃ (111) for GaN integration on Si(111): Experiment and ab initio calculations T2 - Journal of Applied Physics Y1 - 2016 U6 - https://doi.org/10.1063/1.4963826 SN - 1089-7550 SN - 0021-8979 VL - 120 SP - 135103 ER - TY - GEN A1 - Kuschel, Olga A1 - Dieck, Florian A1 - Wilkens, Henrik A1 - Gevers, Sebastian A1 - Rodewald, Jari A1 - Otte, Christian A1 - Zöllner, Marvin Hartwig A1 - Niu, Gang A1 - Schröder, Thomas A1 - Wollschläger, Joachim T1 - Plasma Enhanced Complete Oxidtation of Ultrathin Epitaxial Praseodymia Films on Si(111) T2 - Materials Y1 - 2015 U6 - https://doi.org/10.3390/ma8095312 SN - 1996-1944 VL - 8 IS - 9 SP - 6379 EP - 6390 ER - TY - GEN A1 - Niu, Gang A1 - Zöllner, Marvin Hartwig A1 - Schröder, Thomas A1 - Schäfer, Andreas A1 - Jhang, Jin-Hao A1 - Zielasek, Volkmar A1 - Bäumer, Marcus A1 - Wilkens, Henrik A1 - Wollschläger, Joachim A1 - Olbrich, Reinhard A1 - Lammers, Christian A1 - Reichling, Michael T1 - Controlling the physics and chemistry of binary and ternary praseodymium and cerium oxide systems T2 - Physical Chemistry Chemical Physics Y1 - 2015 U6 - https://doi.org/10.1039/C5CP02283E SN - 1463-9084 SN - 1463-9076 VL - 17 IS - 38 SP - 24513 EP - 24540 ER - TY - GEN A1 - Mahmoodinezhad, Ali A1 - Morales, Carlos A1 - Naumann, Franziska A1 - Plate, Paul A1 - Meyer, Robert A1 - Janowitz, Christoph A1 - Henkel, Karsten A1 - Kot, Małgorzata A1 - Zöllner, Marvin Hartwig A1 - Wenger, Christian A1 - Flege, Jan Ingo T1 - Low-temperature atomic layer deposition of indium oxide thin films using trimethylindium and oxygen plasma T2 - Journal of Vacuum Science and Technology A N2 - Indium oxide (InxOy) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) using trimethylindium and oxygen plasma in a low-temperature range of 80–200 °C. The optical properties, chemical composition, crystallographic structure, and electrical characteristics of these layers were investigated by spectroscopic ellipsometry (SE), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), as well as current-voltage and capacitance-voltage measurements. The SE results yielded a nearly constant growth rate of 0.56 Å per cycle and a thickness inhomogeneity of ≤1.2% across 4-in. substrates in the temperature range of 100–150 °C. The refractive index (at 632.8 nm) was found to be 2.07 for the films deposited at 150 °C. The PEALD-InxOy layers exhibit a direct (3.3 ± 0.2 eV) and an indirect (2.8 ± 0.1 eV) bandgap with an uptrend for both with increasing substrate temperature. Based on XPS characterization, all InxOy samples are free of carbon impurities and show a temperature-dependent off-stoichiometry indicating oxygen vacancies. XRD diffraction patterns demonstrate an onset of crystallization at 150 °C. Consistent with the optical, XPS, and XRD data, the films deposited at ≥150 °C possess higher electrical conductivity. Our findings prove that a low-temperature PEALD process of InxOy is feasible and promising for a high-quality thin-film deposition without chemical impurities on thermally fragile substrates. KW - Indium oxide KW - Plasma-enhanced atomic layer deposition KW - X-ray photoelectron spectroscopy KW - Ellipsometry KW - X-ray diffraction KW - Electrical properties Y1 - 2021 U6 - https://doi.org/10.1116/6.0001375 SN - 0734-2101 SN - 1520-8559 VL - 39 IS - 6 ER -