TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Dörner, Ralf A1 - Hirche, Klaus A1 - Wurfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Analysis of the Survivability of GaN Low-Noise Amplifiers Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Hirche, Klaus A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier Y1 - 2006 ER - TY - GEN A1 - Rudolph, Matthias A1 - Dewitz, Mike A1 - Liero, Armin A1 - Khalil, I. A1 - Chaturvedi, Nidhi A1 - Wipf, Christian A1 - Bertenburg, R. M. A1 - Miller, J. A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Robust X-Band LNA with Extremely Short Recovery Time Y1 - 2009 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Kurpas, Paul A1 - Brunner, F. A1 - Doser, W. A1 - Maaßdorf, Andre A1 - Dörner, Ralf A1 - Blanck, H. A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation Y1 - 2001 ER - TY - CHAP A1 - Lenk, Friedrich A1 - Klockenhoff, Harald A1 - Maaßdorf, Andre A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - A 3.2 W coplanar single-device X-band amplifier with GaAs HBT T2 - Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005 N2 - High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47% PAE is achieved. Y1 - 2005 UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1637147 SN - 88-902012-0-7 SP - 49 EP - 52 PB - Horizon House Publ. CY - London ER - TY - CHAP A1 - Hilsenbeck, Jochen A1 - Lenk, Friedrich A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology T2 - Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003 N2 - We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far. Y1 - 2003 SN - 0-7803-7833-4 U6 - https://doi.org/10.1109/GAAS.2003.1252399 SP - 223 EP - 226 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Kuhnert, Holger A1 - Lenk, Friedrich A1 - Hilsenbeck, Jochen A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz T2 - 2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3 N2 - Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies. Y1 - 2001 SN - 0-7803-6538-0 U6 - https://doi.org/10.1109/MWSYM.2001.967198 SP - 1551 EP - 1554 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Schott, Matthias A1 - Kuhnert, Holger A1 - Lenk, Friedrich A1 - Hilsenbeck, Jochen A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - 38 GHz push-push GaAs-HBT MMIC oscillator T2 - 2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention & Trade Center, Seattle, Washington, vol. 2 N2 - Two differential coplanar MMIC HBT oscillators are presented, a fixed frequency and a VCO version. They provide single-ended output at the second harmonic at 38 GHz as well as differential output at 19 GHz. The oscillators show excellent phase noise performance, the fixed-frequency type reaches -95 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic, at 100 kHz offset. Y1 - 2002 SN - 0-7803-7239-5 U6 - https://doi.org/10.1109/MWSYM.2002.1011761 SP - 839 EP - 842 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Hilsenbeck, Jochen A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz T2 - 2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2 N2 - Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth. Y1 - 2003 SN - 0-7803-7695-1 U6 - https://doi.org/10.1109/MWSYM.2003.1212515 SP - 903 EP - 906 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - GEN A1 - Yazdani, Hossein A1 - Beleniotis, Petros A1 - Brunner, Frank A1 - Ostermay, Ina A1 - Würfl, Joachim A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang A1 - Hilt, Oliver T1 - K/Ka-Band-GaN-High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance T2 - Physica Status Solidi Y1 - 2024 U6 - https://doi.org/10.1002/pssa.202400592 ER -