TY - GEN A1 - Kaletta, Udo Christian A1 - Wipf, Christian A1 - Fraschke, Mirko A1 - Wolansky, Dirk A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas A1 - Wenger, Christian T1 - AlN/SiO2/Si3N4/Si(100) based CMOS compatible surface acoustic wave filter with -12.8 dB minimum insertion loss T2 - IEEE Transactions on Electron Devices Y1 - 2015 U6 - https://doi.org/10.1109/TED.2015.2395443 SN - 0018-9383 VL - 62 IS - 3 SP - 764 EP - 768 ER - TY - GEN A1 - Rudolph, Matthias A1 - Dewitz, Mike A1 - Liero, Armin A1 - Khalil, I. A1 - Chaturvedi, Nidhi A1 - Wipf, Christian A1 - Bertenburg, R. M. A1 - Miller, J. A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Robust X-Band LNA with Extremely Short Recovery Time Y1 - 2009 ER - TY - CHAP A1 - Wipf, Christian A1 - Sorge, Roland A1 - Weger, Peter T1 - Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications T2 - Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011 N2 - A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time. Y1 - 2011 SN - 978-1-4244-8060-9 U6 - https://doi.org/10.1109/SIRF.2011.5719310 SP - 121 EP - 124 PB - IEEE CY - Piscataway ER -