TY - GEN A1 - Wen, Hanying A1 - Augel, Lion A1 - Wang, Wenjuan A1 - Knobbe, Jens T1 - Characterization of AlSiCu/TiN/p-Si Schottky Contacts with Nanophotonic Structures for Near-infrared Photodetectors T2 - 2023 46th International Spring Seminar on Electronics Technology (ISSE) : 10-14 May 2023 : conference location: Timișoara, Romania N2 - Schottky photodetectors based on internal photoemission have the potential of an adjustable detection range in the near-infrared range and Si compatible technology integration. The external quantum efficiency of Schottky photodetectors can be improved using nanophotonic structures, which enhance the absorption of the device. However, the electrical properties of Schottky photodetectors deviate under an altered metal-semiconductor interface topography. We characterize a common layer system for metal contacts consisting of a TiN interstitial layer between the p-Si wafer and the AlSiCu metallization. By varying the thickness of the TiN we discuss how homogeneity of the sputtered layers influence device properties with different interface topographies. Through electrical wafer-level characterization, the characteristics of the Schottky contact are evaluated and compared to the ideal physical modelling. Y1 - 2023 UR - https://ieeexplore.ieee.org/document/10168510 SN - 979-8-3503-3485-2 SN - 979-8-3503-3484-5 U6 - https://doi.org/10.1109/ISSE57496.2023.10168510 SP - 1 EP - 5 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Augel, Lion A1 - Wen, Hanying A1 - Knobbe, Jens T1 - TiN-Si Schottky Diodes for SWIR Detection T2 - Tagungsband MikroSystemTechnik Kongress 2023, Dresden, 23. - 25. Oktober 2023 Y1 - 2023 SN - 978-3-8007-6204-0 SN - 978-3-8007-6203-3 SP - 30 EP - 34 PB - VDE Verlag CY - Berlin ER -