TY - CHAP A1 - Ilkov, N. A1 - Dernovsek, O. A1 - Bakalski, Winfried A1 - Weger, Peter A1 - Matz, R. A1 - Simbürger, Werner T1 - A 5 to 6.5 GHz LTCC Power Amplifier Module T2 - Proceedings of the 36th International Symposium on Microelectronics (IMAPS), Boston, USA, 16 - 20 Nov. 2003, IEEE Y1 - 2003 SN - 0-930815-71-8 PB - IMAPS CY - Washington, DC ER - TY - CHAP A1 - Vasylyev, Andriy A1 - Weger, Peter T1 - A Monolithic 2.4 GHz, 0.13 um CMOS Power Amplifier with 28 dBm Output Power and PAE at 1.2 V Supply Y1 - 2004 ER - TY - GEN A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - A Fully Integrated 3.3-3.8-GHz Power Amplifier With Autotransformer Balun Y1 - 2009 ER - TY - CHAP A1 - Meshcheriakov, Ievgenii A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - Fully monolithically integrated X-band power amplifier without external matching T2 - Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) 2010, Berlin, Institute of Technology Y1 - 2010 SN - 978-1-424-47905-4 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Gerlich, Stefan A1 - Weger, Peter T1 - A Narrow-band 8.7 GHz SiGe HBT LNA with a Passive Frequency Selective Feedback T2 - Frequenz N2 - This paper presents a low noise amplifier (LNA) with differential output using a passive frequency selective feedback. The introduced feedback stabilizes the amplifier at lower frequencies and improves the gain in the desired frequency band. The LNA consists of two stages. Additionally, a buffer at the output is added for measurements. The amplifier was implemented in a 0.35 μm SiGe technology. For measurements the LNA was bonded to a substrate. A peak gain of 28.1 dB and a minimum noise figure of 2.2 dB at a supply voltage of 3 V were achieved. KW - LNA KW - Radiofrequency Integrated Circuits Y1 - 2012 U6 - https://doi.org/10.1515/freq-2012-0037 SN - 0016-1136 SN - 2191-6349 VL - 66 IS - 7-8 SP - 183 EP - 188 ER - TY - GEN A1 - Gerlich, Stefan A1 - Weger, Peter T1 - Highly Efficient Packaged 11-13 GHz Power Amplifier in SiGe-Technology With 37.3% of PAE T2 - IEEE Microwave and Wireless Components Letters N2 - A power amplifier for a frequency range of 11-13 GHz that is incorporated in 0.35 μm SiGe-technology is presented in this letter. The two-stage push-pull amplifier uses monolithically integrated transformers for input and interstage matching and a monolithically integrated modified LC-balun as an output-matching network. For stabilization purposes and gain improvement in the operating frequency range a passive frequency selective feedback in parallel to the base-collector was introduced. The power amplifier is mounted on a 7 × 7 mm VQFN package. From a single 1.8 V voltage supply, the amplifier has a power-added efficiency of greater than 30% from 11.2 to 13 GHz with a maximum of 37.3% at 12.5 GHz. The maximum output power is 23.4 dBm (saturation), as measured in the continuous mode. KW - Power amplifier Y1 - 2013 U6 - https://doi.org/10.1109/LMWC.2013.2278285 SN - 1531-1309 VL - 23 IS - 10 SP - 539 EP - 541 ER - TY - JOUR A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Bakalski, Winfried A1 - Simbürger, Werner T1 - Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer Y1 - 2005 ER - TY - CHAP A1 - Wipf, Christian A1 - Sorge, Roland A1 - Weger, Peter T1 - Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications T2 - Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE 11th Topical Meeting on, Phoenix, AZ, 2011 N2 - A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time. Y1 - 2011 SN - 978-1-4244-8060-9 U6 - https://doi.org/10.1109/SIRF.2011.5719310 SP - 121 EP - 124 PB - IEEE CY - Piscataway ER - TY - CHAP A1 - Debski, Wojciech Andrzej A1 - Langmann, U. A1 - Weger, Peter A1 - Mayr, P. A1 - Matz, R. T1 - Keramische System-in-Package-Technologie für 5GHz-Transceivermodul T2 - Deutsche IMAPS-Konferenz 2005, 10. - 11.10.05, München Y1 - 2005 N1 - CD-ROM PB - IMAPS Deutschland CY - München ER - TY - CHAP A1 - Bakalski, Winfried A1 - Scholtz, A. L. A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Simbürger, Werner A1 - Thüringer, R. A1 - Wohlmuth, H.-D. T1 - A Fully Integrated 7-18 GHz Power Amplifier with On-Chip Output Balun in 75 GHz-fT SiGe-Bipolar T2 - Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Toulouse, France, 29 - 20 Sept. 2003, IEEE Y1 - 2003 SN - 0-7803-7800-8 SP - 61 EP - 66 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - JOUR A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - Monolithically integrated ?? frequency synthesiser with distributed reference spurs Y1 - 2008 ER - TY - JOUR A1 - Debski, Wojciech Andrzej A1 - Weger, Peter T1 - A Monolithically Integrated 23-24 GHz Tuned Down-Converter in 0.13 µm CMOS Y1 - 2007 ER - TY - JOUR A1 - Debski, Wojciech Andrzej A1 - Weger, Peter T1 - 5-6 GHz Low-Power, High Linearity Differential CMOS LNA with Robust ESD Protection Y1 - 2007 ER - TY - JOUR A1 - Solomko, Valentyn A. A1 - Weger, Peter T1 - 11 GHz CMOS frequency synthesiser Y1 - 2006 ER - TY - JOUR A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Bakalski, Winfried T1 - 17 GHz 50-60 mW Power Amplifiers in 0.13 um standard CMOS Y1 - 2006 ER - TY - JOUR A1 - Vasylyev, Andriy A1 - Weger, Peter A1 - Simbürger, Werner T1 - Ultra broadband 20.5-31 GHz monolithically integrated CMOS power amplifier Y1 - 2005 ER - TY - JOUR A1 - Bakalski, Winfried A1 - Weger, Peter A1 - Ilkov, N. A1 - Scholtz, A. L. A1 - Dernovsek, N. A1 - Matz, R. A1 - Simbürger, Werner T1 - A 5-6.5GHz LTCC Power Amplifier Module with 0.3W at 2.4V in Si-bipolar Y1 - 2003 ER -