TY - GEN A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Walczyk, Christian A1 - Kubotsch, S. A1 - Wenger, Christian A1 - Schröder, Thomas A1 - Vallée, Christophe A1 - Gonon, P. A1 - Mannequin, C. A1 - Jousseaume, V. A1 - Grampeix, Helen T1 - Resistive Switching of HfO2-based MIM diodes: Impact of the Top Electrode Materials T2 - Thin Solid Films Y1 - 2012 SN - 0040-6090 VL - 520 IS - 14 SP - 4551 EP - 4555 ER - TY - GEN A1 - Bertaud, Thomas A1 - Sowinska, Małgorzata A1 - Walczyk, Damian A1 - Thiess, Sebastian A1 - Walczyk, Christian A1 - Gloskovski, A. A1 - Drube, W. A1 - Schroeder, Thomas T1 - In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy T2 - Applied Physics Letters Y1 - 2012 VL - 112 IS - 4 SP - 043506 EP - 043511 ER - TY - GEN A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Sowinska, Małgorzata A1 - Wolansky, Dirk A1 - Tillack, Bernd A1 - Schoof, Gunther A1 - Korolevych, R. A1 - Wenger, Christian A1 - Thiess, Sebastian A1 - Schroeder, Thomas A1 - Walczyk, Christian T1 - HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays T2 - ECS transactions Y1 - 2012 SN - 1938-6737 VL - 50 IS - 4 SP - 21 EP - 26 ER - TY - GEN A1 - Sowinska, Małgorzata A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Thiess, Sebastian A1 - Schubert, Markus Andreas A1 - Lukosius, Mindaugas A1 - Drube, W. A1 - Walczyk, Christian A1 - Schröder, Thomas T1 - Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures T2 - Applied Physics Letters Y1 - 2012 SN - 0003-6951 VL - 100 IS - 23 SP - 233509 EP - 233514 ER - TY - GEN A1 - Grossi, Alessandro A1 - Walczyk, Damian A1 - Zambelli, Cristian A1 - Miranda, Enrique A1 - Olivo, Piero A1 - Stikanov, V. A1 - Feriani, A. A1 - Sune, J. A1 - Schoof, Gunther A1 - Kraemer, Rolf A1 - Tillack, Bernd A1 - Fox, A. A1 - Schroeder, Thomas A1 - Walczyk, Christian T1 - Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays T2 - IEEE Transaction on Electronic Devices Y1 - 2015 U6 - https://doi.org/10.1109/TED.2015.2442412 SN - 0018-9383 VL - 62 IS - 8 SP - 2502 EP - 2509 ER -