TY - CHAP A1 - Goryachko, Andriy A1 - Beuckert, Guido A1 - Zaumseil, Peter A1 - Wagner, Guenter A1 - Schmeißer, Dieter T1 - Investigations of Pr2O3 growth modes on 4H-SiC(0001) Surfaces T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - The SiC is suited especially well for high power and high voltage semiconductor devices. In order to increase the reliability against electrical breakdown of metal-insulator-semiconductor (MIS) structures, one needs to use the insulator with possibly higher dielectric constant. Pr2O3 is shown to posses a much higher dielectric constant (equals 30) than traditionally used SiO2. Therefore, Pr2O3/SiC is an excellent material combination for high voltage MIS devices. The 4H-SiC(0001) substrates are characterised with scanning tunneling microscopy, while the Pr2O3 surface - with atomic force microscopy technique. We show distinct growth modes of Pr2O3 film, such as 3D and layer by layer growth. The crystalline structure and film thickness are determined by X-ray diffraction and its chemical composition by X-ray photoelectron spectroscopy. The Pr2O3 film characteristics are optimised for high-quality MIS structures in terms of lateral uniformity, low interface states density and leakage current, as well as physical integrity. KW - SiC KW - Pr2O3 KW - X-ray photoelectron spectroscopy (XPS) KW - X-Ray diffraction Y1 - 2004 UR - http://www.dpg-verhandlungen.de/year/2004/conference/regensburg/part/ds/session/9/contribution/4?lang=de SN - ISSN 0420-0195 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER -