TY - GEN A1 - Rudolph, Matthias A1 - Achouche, M. A1 - Kraus, S. A1 - Spitzbart, Th. A1 - Kurpas, Paul A1 - Rentner, D. A1 - Brunner, F. A1 - Richter, E. A1 - Bergunde, T. A1 - Heymann, Peter A1 - Wolter, P. A1 - Wittrich, H. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InGaP/GaAs Power HBTs for L-Band Applications Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Dörner, Ralf A1 - Hirche, Klaus A1 - Wurfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Analysis of the Survivability of GaN Low-Noise Amplifiers Y1 - 2007 ER - TY - GEN A1 - Rudolph, Matthias A1 - Kraemer, Tomas A1 - Schmückle, Franz-Josef A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz Y1 - 2009 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Hirche, Klaus A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier Y1 - 2006 ER - TY - GEN A1 - Rudolph, Matthias A1 - Dewitz, Mike A1 - Liero, Armin A1 - Khalil, I. A1 - Chaturvedi, Nidhi A1 - Wipf, Christian A1 - Bertenburg, R. M. A1 - Miller, J. A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Robust X-Band LNA with Extremely Short Recovery Time Y1 - 2009 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Kurpas, Paul A1 - Brunner, F. A1 - Doser, W. A1 - Maaßdorf, Andre A1 - Dörner, Ralf A1 - Blanck, H. A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation Y1 - 2001 ER - TY - GEN A1 - Rudolph, Matthias A1 - Würfl, Joachim A1 - Kurpas, Paul A1 - Brunner, F. A1 - Mai, M. T1 - Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing Y1 - 2001 ER - TY - GEN A1 - Kraemer, Thorsten A1 - Meliani, Chafik A1 - Lenk, Friedrich A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - Transferred substrate DHBT of ft = 410 GHz and fmax = 480 GHz for traveling wave amplifiers T2 - Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008 N2 - We report a MMIC process in transferred substrate technology. The transistors of 0.8 times 5 mum2 emitter size feature ft = 410 GHz and fmax = 480 GHz at BVceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to fc = 70 GHz were realized. Y1 - 2008 SN - 978-1-4244-2258-6 SN - 978-1-4244-2259-3 U6 - https://doi.org/10.1109/ICIPRM.2008.4702999 SP - 1 EP - 3 ER - TY - GEN A1 - Kraemer, Thorsten A1 - Lenk, Friedrich A1 - Maaßdorf, Andre A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - High Yield Transferred Substrate InP DHBT T2 - Indium Phosphide & Related Materials, 2007, IPRM '07, IEEE 19th International Conference, Matsue, Japan, 14 - 18 May 2007 N2 - A transferred substrate InP DHBT of 0.8 mum emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of ft = 300 GHz plusmn 3%SD, fmax = 250 GHz plusmn 5%SD at a breakdown voltage of BVceo = 6 V. Y1 - 2007 SN - 1-4244-0875-X U6 - https://doi.org/10.1109/ICIPRM.2007.381210 SP - 407 EP - 408 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Klockenhoff, Harald A1 - Maaßdorf, Andre A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - A 3.2 W coplanar single-device X-band amplifier with GaAs HBT T2 - Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005 N2 - High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47% PAE is achieved. Y1 - 2005 UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1637147 SN - 88-902012-0-7 SP - 49 EP - 52 PB - Horizon House Publ. CY - London ER - TY - CHAP A1 - Hilsenbeck, Jochen A1 - Lenk, Friedrich A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology T2 - Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003 N2 - We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far. Y1 - 2003 SN - 0-7803-7833-4 U6 - https://doi.org/10.1109/GAAS.2003.1252399 SP - 223 EP - 226 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Hilsenbeck, Jochen A1 - Lenk, Friedrich A1 - Lossy, Richard A1 - Würfl, Joachim A1 - Kohler, K. A1 - Obloh, H. T1 - DC and microwave properties of 0.5 um AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line T2 - IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000 N2 - DC and RF characteristics of AlGaN/GaN HEMTs processed by 2-inch stepper lithography are presented. The devices, grown by MOVPE on 2" sapphire wafers consist of: GaN buffer, Al0.25Ga0.75 N spacer, doped Al0.25Ga0.75N supply layer, Al0.25Ga0.75N barrier, GaN cap. Refractory source and gate contacts along with mesa isolation and air bridge technology are applied. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 m/A/mm, 203 mS/mm, -3.5 V with very good homogeneity across 2". The cut off frequencies fT and fmax are 24 and 54 GHz respectively. A standard small signal equivalent circuit model exactly describes DC- and microwave properties Y1 - 2000 SN - 0-7803-6258-6 U6 - https://doi.org/10.1109/ISCS.2000.947181 SP - 351 EP - 356 PB - IEEE Service Center CY - Piscataway, NJ ER -