TY - CHAP A1 - Rudolph, Matthias A1 - Mostardinha, H. A1 - Cabral, P. M. A1 - Carvalho, N. B. A1 - Kurpas, Paul A1 - Würfl, Joachim A1 - Pinto, J. C. A1 - Barnes, J. A1 - Garat, F. T1 - GaN RF Oscillator Used in Space Applications Y1 - 2010 U6 - https://doi.org/http://dx.doi.org/10.1109/INMMIC.2010.5480142 ER - TY - GEN A1 - Rudolph, Matthias A1 - Achouche, M. A1 - Kraus, S. A1 - Spitzbart, Th. A1 - Kurpas, Paul A1 - Rentner, D. A1 - Brunner, F. A1 - Richter, E. A1 - Bergunde, T. A1 - Heymann, Peter A1 - Wolter, P. A1 - Wittrich, H. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InGaP/GaAs Power HBTs for L-Band Applications Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Dörner, Ralf A1 - Hirche, Klaus A1 - Wurfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Analysis of the Survivability of GaN Low-Noise Amplifiers Y1 - 2007 ER - TY - GEN A1 - Rudolph, Matthias A1 - Kraemer, Tomas A1 - Schmückle, Franz-Josef A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz Y1 - 2009 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Hirche, Klaus A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier Y1 - 2006 ER - TY - GEN A1 - Rudolph, Matthias A1 - Dewitz, Mike A1 - Liero, Armin A1 - Khalil, I. A1 - Chaturvedi, Nidhi A1 - Wipf, Christian A1 - Bertenburg, R. M. A1 - Miller, J. A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Robust X-Band LNA with Extremely Short Recovery Time Y1 - 2009 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Kurpas, Paul A1 - Brunner, F. A1 - Doser, W. A1 - Maaßdorf, Andre A1 - Dörner, Ralf A1 - Blanck, H. A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation Y1 - 2001 ER - TY - GEN A1 - Rudolph, Matthias A1 - Würfl, Joachim A1 - Kurpas, Paul A1 - Brunner, F. A1 - Mai, M. T1 - Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing Y1 - 2001 ER - TY - GEN A1 - Yazdani, Hossein A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Brusaterra, Enrico A1 - Hilt, Oliver A1 - Rudolph, Matthias A1 - Würfl, Joachim T1 - Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag T2 - Physica Status Solidi (a) N2 - Drain lag is a well‐known phenomenon that leads to radio frequency performance degradation in AlGaN/GaN high‐electron‐mobility transistors. Herein, it is demonstrated that a reduction of the gate‐to‐drain distance (Lgd) from 2.0 to 0.5 μm results in 7% reduction in the current collapse. This improvement is attributed to a decrease in surface trapping, which, in this case, is found to have a greater impact on current collapse than relatively slow traps in the buffer layer. To support this argument, TCAD simulations are conducted. Load‐pull analysis confirms that scaling the devices to Lgd = 0.5 μm provides 15% better output power density at 10 GHz than Lgd = 2.0 μm. Additionally, a new passivation layer for reduced surface traps exhibits a 20 to 30% higher output power density and at least a 10% improvement in power‐added efficiency at 20 GHz on a nominally identical GaN‐on‐semi‐insulating SiC epi‐wafer. Y1 - 2024 U6 - https://doi.org/10.1002/pssa.202300885 SN - 1862-6300 SP - 1 EP - 8 PB - Wiley ER - TY - GEN A1 - Yazdani, Hossein A1 - Beleniotis, Petros A1 - Brunner, Frank A1 - Ostermay, Ina A1 - Würfl, Joachim A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang A1 - Hilt, Oliver T1 - K/Ka-Band-GaN-High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance T2 - Physica Status Solidi Y1 - 2024 U6 - https://doi.org/10.1002/pssa.202400592 ER -