TY - THES A1 - Trushin, Maxim T1 - Electronic properties of interfaces produced by silicon wafer hydrophilic bonding Y1 - 2011 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-22841 ER - TY - GEN A1 - Trushin, Maxim A1 - Varlamov, A. A1 - Loshachenko, A. A1 - Vyvenko, Oleg F. A1 - Kittler, Martin T1 - Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon T2 - Journal of Physics: Conference Series N2 - Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si. Y1 - 2019 U6 - https://doi.org/10.1088/1742-6596/1190/1/012005 SN - 1742-6596 SN - 1742-6588 VL - 1190 IS - 1 ER -