TY - GEN A1 - Hansen, Felix A1 - Fucke, Rico A1 - Charvin, Titouan A1 - Froeschke, Samuel A1 - Wolf, Daniel A1 - Giraud, Romain A1 - Dufouleur, Joseph A1 - Gräßler, Nico A1 - Büchner, Bernd A1 - Schmidt, Peer A1 - Hampel, Silke T1 - Direct Deposition of (BixSb1–x)2Te3 Nanosheets on Si/SiO2 Substrates by Chemical Vapor Transport T2 - Crystal growth & design N2 - The tellurides of bismuth and antimony (Bi2Te3 and Sb2Te3) are prominent members of the V2VI3 material family that exhibit promising topological properties. We provide a method for the rational synthesis of mixed crystals of these materials ((BixSb1–x)2Te3 with x = 0.1, ..., 0.9) by means of a bottom-up chemical vapor transport (CVT) approach. Thermodynamic calculations showed the synthesis to be possible in the temperature range of 390–560 °C without significant enrichment of either component and without adding a transport agent. The starting materials were synthesized and verified by X-ray diffraction (XRD). Optimization experiments showed the ideal conditions for nanosheet synthesis to be T2 = 560 °C, T1 = 390 °C with a reaction time of t = 36 h. Crystals with heights of down to 12 nm (12 quintuple layers) were synthesized and analyzed by means of scanning electron microscopy, energy-dispersive X-ray spectrometry, and atomic force microscopy. High-resolution transmission electron microscopy confirmed the R3̅m crystal structure, high crystallinity, and overall quality of the synthesized (BixSb1–x)2Te3 nanosheets. Magnetotransport measurements revealed that such ternary compounds can have a significantly reduced carrier density compared to the binary parent compounds. KW - Crystal growth KW - Chemical vapor transport KW - Thermodynamic modeling KW - Chalcogenides Y1 - 2022 UR - https://pubs.acs.org/doi/abs/10.1021/acs.cgd.1c01446 U6 - https://doi.org/10.1021/acs.cgd.1c01446 SN - 1528-7505 SN - 1528-7483 VL - 22 IS - 4 SP - 2354 EP - 2363 ER -