TY - GEN A1 - Grossi, Alessandro A1 - Walczyk, Damian A1 - Zambelli, Cristian A1 - Miranda, Enrique A1 - Olivo, Piero A1 - Stikanov, V. A1 - Feriani, A. A1 - Sune, J. A1 - Schoof, Gunther A1 - Kraemer, Rolf A1 - Tillack, Bernd A1 - Fox, A. A1 - Schroeder, Thomas A1 - Walczyk, Christian T1 - Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays T2 - IEEE Transaction on Electronic Devices Y1 - 2015 U6 - https://doi.org/10.1109/TED.2015.2442412 SN - 0018-9383 VL - 62 IS - 8 SP - 2502 EP - 2509 ER - TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Richard, Marie-Ingrid A1 - Chahine, Gilbert A. A1 - Zaumseil, Peter A1 - Reich, Christian A1 - Capellini, Giovanni A1 - Montalenti, Francesco A1 - Marzegalli, Anna A1 - Xie, Ya-Hong A1 - Schülli, Tobias U. A1 - Häberlen, Maik A1 - Storck, Peter A1 - Schroeder, Thomas T1 - Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/am508968b SN - 1944-8252 VL - 7 IS - 17 SP - 9031 EP - 9037 ER - TY - GEN A1 - Zaumseil, Peter A1 - Yamamoto, Yuji A1 - Schubert, M. A1 - Capellini, Giovanni A1 - Skibitzki, Oliver A1 - Zöllner, Marvin Hartwig A1 - Schroeder, Thomas T1 - Tailoring the strain in Si nano-structures for defect-free epitaxial Ge overgrowth T2 - Nanotechnology Y1 - 2015 U6 - https://doi.org/10.1088/0957-4484/26/35/355707 SN - 1361-6528 VL - 26 IS - 35 SP - 355707 ER - TY - GEN A1 - Schäfer, Anna A1 - Rahmanizadeh, K. A1 - Bihlmayer, G. A1 - Luysberg, Martina A1 - Wendt, Fabian A1 - Besmehn, Astrid A1 - Fox, A. A1 - Schnee, M. A1 - Niu, Gang A1 - Schroeder, Thomas A1 - Mantl, Siegfried A1 - Hartdegen, Hilde A1 - Mikulics, Martin A1 - Schubert, Jürgen T1 - Polymorphous GdScO3 as high permittivity dielectric T2 - Journal of Alloy and Compunds Y1 - 2015 U6 - https://doi.org/10.1016/j.jallcom.2015.08.135 SN - 0925-8388 VL - 651 SP - 514 EP - 520 ER - TY - GEN A1 - Salvalaglio, Marco A1 - Bergamaschini, Roberto A1 - Isa, Fabio A1 - Scaccabarozi, Andrea A1 - Isella, Giovanni A1 - Backofen, Rainer A1 - Voigt, Axel A1 - Montalenti, Francesco A1 - Capellini, Giovanni A1 - Marzegalli, Anna A1 - Schroeder, Thomas A1 - Känel, Hans von A1 - Miglio, Leo T1 - Engineering coalescence by annealing of 3D Ge microstructures into high-qualtiy suspended layers on Si T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/acsami.5b05054 SN - 1944-8244 VL - 7 IS - 34 SP - 19219 EP - 19225 ER - TY - CHAP A1 - Lupina, Grzegorz A1 - Schroeder, Thomas A1 - Dabrowski, Jarek Marek A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim T1 - Ti-doping of Pr silicate layers for high-k dielectrics applications T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Near-term downscaling of the metal-oxide-semiconductor field-effect transistors (MOSFETs) requires the replacement of the SiO2 gate oxide with a material having a higher dielectric constant. Recent studies indicate that silicate materials are the most promising candidates; among them are Pr silicates. Applying a combination of x-ray photoelectron spectroscopy (XPS), electrical measurements (C-V), and ab initio calculations, we investigated the effect of thin Ti doping on the structural and electrical properties of the gate stacks composed of a Pr silicate film and a SiO2-based interfacial buffer layer. Metallic Ti was deposited at room temperature after the formation of the Pr silicate dielectric. The resulting layered structures were annealed under ultra-high vacuum (UHV) at various temperatures between 70∘C and 880∘C. XPS indicates that the evaporated layer preserves its metallic character over the whole range of UHV annealing temperatures. Synchrotron radiation XPS at BESSY II shows that large amounts of Ti atoms incorporated into the Pr silicate remain metallic even after air exposure at room temperature. Annealing in nitrogen ambient at 300∘C leads to the oxidation of these atoms so that a mixed Pr:Ti silicate is formed. We show that the so formed dielectrics exhibit an improved equivalent oxide thickness and a reduced density of interface states. KW - high-k KW - X-ray photoelectron spectroscopy KW - ab inito calculations KW - Capacitance-voltage measurements KW - Pr silicate Y1 - 2005 UR - http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/df/session/6/contribution/5?lan=en PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Yang, Sang Mo A1 - Mazet, Lucie A1 - Okatan, M. Baris A1 - Jesse, Stephen A1 - Niu, Gang A1 - Schroeder, Thomas A1 - Schamm-Chardon, Sylvie A1 - Dubourdieu, Catherine A1 - Baddorf, Arthur P. A1 - Kalinin, Sergei V. T1 - Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopy T2 - Applied Physics Letters Y1 - 2016 U6 - https://doi.org/10.1063/1.4954276 SN - 1077-3118 VL - 108 IS - 25 SP - 252902 ER - TY - GEN A1 - Schlykow, Viktoria A1 - Klesse, Wolfgang Matthias A1 - Niu, Gang A1 - Taoka, Noriyuki A1 - Yamamoto, Yuji A1 - Skibitzki, Oliver A1 - Barget, M. R. A1 - Zaumseil, Peter A1 - Känel, Hans von A1 - Schubert, Markus Andreas A1 - Capellini, Giovanni A1 - Schroeder, Thomas T1 - Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001) T2 - Applied Physics Letters Y1 - 2016 U6 - https://doi.org/10.1063/1.4967500 SN - 1077-3118 VL - 109 IS - 20 SP - 202102 ER - TY - GEN A1 - Solan, Enver A1 - Dirkmann, Sven A1 - Hansen, Mirko A1 - Schroeder, Dietmar A1 - Kohlstedt, Hermann A1 - Ziegler, Martin A1 - Mussenbrock, Thomas A1 - Ochs, Karlheinz T1 - An Enhanced Lumped Element Electrical Model of the Double Barrier Memristive Device T2 - Journal of physics : D, Applied physics Y1 - 2017 U6 - https://doi.org/10.1088/1361-6463/aa69ae VL - 50 IS - 19 ER - TY - GEN A1 - Schlykow, Viktoria A1 - Manganelli, Constanza Lucia A1 - Römer, Friedhard A1 - Clausen, Caterina J. A1 - Augel, Lion A1 - Schulze, Jörg A1 - Katzer, Jens A1 - Schubert, Michael Andreas A1 - Witzigmann, Bernd A1 - Schroeder, Thomas A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas T2 - Nanotechnology Y1 - 2020 U6 - https://doi.org/10.1088/1361-6528/ab91ef SN - 1361-6528 VL - 31 IS - 34 ER - TY - GEN A1 - Becker, L. A1 - Storck, Peter A1 - Liu, Y. A1 - Schwalb, G. A1 - Schroeder, Thomas A1 - Fischer, Inga Anita A1 - Albrecht, M. T1 - Optimizing misfit dislocation glide kinetics for enhanced threading dislocation density reduction in Si1− xGex/Si (001) layers through dynamic growth rate control T2 - Journal of Applied Physics Y1 - 2024 U6 - https://doi.org/10.1063/5.0204318 SN - 0021-8979 SN - 1089-7550 VL - 135 IS - 20 SP - 10 ER -