TY - GEN A1 - Zhang, Wei A1 - Sun, Ke A1 - Li, Biyun A1 - Lee, Jae Young A1 - Xie, Ya-Hong A1 - Katzer, Jens A1 - Schroeder, Thomas A1 - Wei, Xinyu A1 - Russell, Thomas P. T1 - Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si T2 - IEEE Transactions on Nanotechnology Y1 - 2012 U6 - https://doi.org/10.1109/TNANO.2012.2208472 SN - 1536-125X VL - 11 IS - 5 SP - 999 EP - 1003 ER - TY - GEN A1 - Bertaud, Thomas A1 - Sowinska, Małgorzata A1 - Walczyk, Damian A1 - Thiess, Sebastian A1 - Walczyk, Christian A1 - Gloskovski, A. A1 - Drube, W. A1 - Schroeder, Thomas T1 - In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy T2 - Applied Physics Letters Y1 - 2012 VL - 112 IS - 4 SP - 043506 EP - 043511 ER - TY - GEN A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Sowinska, Małgorzata A1 - Wolansky, Dirk A1 - Tillack, Bernd A1 - Schoof, Gunther A1 - Korolevych, R. A1 - Wenger, Christian A1 - Thiess, Sebastian A1 - Schroeder, Thomas A1 - Walczyk, Christian T1 - HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays T2 - ECS transactions Y1 - 2012 SN - 1938-6737 VL - 50 IS - 4 SP - 21 EP - 26 ER - TY - GEN A1 - Froehlich, K. A1 - Jančovič, P. A1 - Hudek, B. A1 - Dérer, J. A1 - Paskaleva, A. A1 - Bertaud, Thomas A1 - Schroeder, Thomas T1 - Atomic layer deposition of thin oxide films for resistive switching T2 - Electrochemical Society (ECS) Transactions Y1 - 2013 U6 - https://doi.org/10.1149/05810.0163ecst SN - 1938-6737 VL - 58 IS - 10 SP - 163 EP - 170 ER - TY - GEN A1 - Lange, Felix A1 - Ernst, Owen C. A1 - Teubner, Thomas A1 - Richter, Carsten A1 - Schmidbauer, Martin A1 - Skibitzki, Oliver A1 - Schroeder, Thomas A1 - Schmidt, Peer A1 - Boeck, Torsten T1 - In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates T2 - Nano Futures N2 - Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 μm−2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si–Au droplets with SixGe1−x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements. KW - Crystal growth KW - Silicon KW - Germanium KW - Phase diagram Y1 - 2020 UR - https://iopscience.iop.org/article/10.1088/2399-1984/ab82a0 U6 - https://doi.org/10.1088/2399-1984/ab82a0 SN - 2399-1984 VL - 4 IS - 3 SP - 1 EP - 8 ER - TY - GEN A1 - Lupina, Grzegorz A1 - Schroeder, Thomas A1 - Dabrowski, Jarek Marek A1 - Schmeißer, Dieter A1 - Hoffmann, Patrick T1 - Praseodymium silicate layers with atomically abrupt interface on Si(100) T2 - Applied Physics Letters Y1 - 2005 SN - 0003-6951 VL - 87 IS - 5 ER - TY - JOUR A1 - Lupina, Grzegorz A1 - Schroeder, Thomas A1 - Schmeißer, Dieter A1 - Dabrowski, Jarek Marek T1 - Praseodymium Silicate Films on Si(100) for Gate Dielectric Applications: Physical and Electrical Characterization Y1 - 2006 ER - TY - GEN A1 - Schroeder, Thomas A1 - Lupina, Grzegorz A1 - Seifarth, Olaf A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2-xO3 (x=0-2) dielectrics on TiN for dynamic random access memory applications T2 - Journal of Applied Physics Y1 - 2007 SN - 0021-8979 VL - 102 IS - 1 SP - 014103 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Müller, S. A1 - Seifarth, Olaf A1 - Dabrowski, Jarek Marek A1 - Müssig, Hans-Joachim A1 - Schroeder, Thomas T1 - On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111) T2 - Journal of vacuum science & technology / B KW - band gabs KW - electronic structure KW - oxide layers Y1 - 2009 VL - 27 IS - 1 SP - 271 EP - 276 ER - TY - GEN A1 - Seifarth, Olaf A1 - Schubert, Markus Andreas A1 - Giussani, A. A1 - Klenov, D. O. A1 - Schmeißer, Dieter A1 - Schroeder, Thomas T1 - Single crystalline Pr2-xYxO3 (x=0-2)dielectrics on Si with tailored electronic and crystallographic structure KW - crystalline KW - dielectric KW - structure Y1 - 2010 SN - 1089-7550 VL - 108 IS - 10 SP - 103709 ER - TY - CHAP A1 - Seifarth, Olaf A1 - Wilke, A. A1 - Walczyk, Christian A1 - Dabrowski, Jarek Marek A1 - Zaumseil, Peter A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim A1 - Schroeder, Thomas T1 - Band gap and electronic structure determination with XAS and UPS of thin Pr-oxide films on Si(111) T2 - Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin) KW - band gab KW - XAS KW - UPS KW - Si(111) Y1 - 2008 SP - 285 EP - 286 ER -