TY - CHAP A1 - Tallarida, Massimo A1 - Schmeißer, Dieter A1 - Zheng, Fan T1 - X-ray Absorption and Photoemission Spectroscopy of 3C- and 4H-SiC Y1 - 2006 ER - TY - CHAP A1 - Tallarida, Massimo A1 - Sohal, Rakesh A1 - Schmeißer, Dieter T1 - Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO2/Si and SiO2/SiC interfaces Y1 - 2006 ER - TY - GEN A1 - Schroeder, Thomas A1 - Lupina, Grzegorz A1 - Seifarth, Olaf A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2-xO3 (x=0-2) dielectrics on TiN for dynamic random access memory applications T2 - Journal of Applied Physics Y1 - 2007 SN - 0021-8979 VL - 102 IS - 1 SP - 014103 ER - TY - GEN A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Study of Bulk and Interface Defects in Silicon Oxide with X-ray Absorption Spectroscopy T2 - Materials Science and Engineering : B Y1 - 2007 SN - 0921-5107 VL - 144 IS - 1-3 SP - 23 EP - 26 ER - TY - GEN A1 - Sioncke, Sonja A1 - Lin, Hang-Chu A1 - Brammertz, Guy A1 - Delabie, Annelies A1 - Conard, Thierry A1 - Franquet, Alexis A1 - Caymax, Matty A1 - Meuris, Marc A1 - Schmeißer, Dieter A1 - Tallarida, Massimo T1 - ALD on high mobility channels: engineering the proper gate stack passivation T2 - ECS Transactions KW - ALD KW - engineering KW - gate stack KW - passivation Y1 - 2010 SN - 1938-5862 VL - 33 IS - 2 SP - 9 EP - 23 ER - TY - GEN A1 - Tamm, Aile A1 - Kemell, Marianna A1 - Kozlova, Jekaterina A1 - Sajavaara, Timo A1 - Tallarida, Massimo A1 - Kukli, Kaupo A1 - Sammelselg, V. A1 - Ritala, Mikko A1 - Leskelä, Markku T1 - Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxid Thin Films T2 - Journal of The Electrochemical Society KW - atomic Layer deposition KW - Erbium KW - Zirconium KW - Oxid-Doped Y1 - 2010 VL - 157 IS - 10 SP - G193 EP - G201 ER - TY - GEN A1 - Kukli, Kaupo A1 - Aarik, Jaan A1 - Aidla, Aleks A1 - Uustare, Teet A1 - Jõgi, Indrek A1 - Lu, Jun A1 - Tallarida, Massimo A1 - Kemell, Marianna A1 - Kiisler, Alma- Asta A1 - Ritala, Mikko A1 - Leskelä, Markku T1 - Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1´-methyl-ruthenocene T2 - Journal of Crystal Growth KW - morphology KW - atomic layer deposition Y1 - 2010 U6 - https://doi.org/10.1016/j.jcrysgro.2010.03.033 SN - 0022-0248 VL - 312 IS - 12-13 SP - 2025 EP - 2032 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra high vacuum atomic force microscope KW - in situ KW - atomic layer deposition KW - dielectric KW - microscope Y1 - 2010 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Henkel, Karsten A1 - Bergholz, Matthias A1 - Tallarida, Massimo T1 - The band gab and band offset in ultrathin oxide-semiconductor heterostructures KW - band gab KW - offset KW - ultrathin KW - heterostructures Y1 - 2010 ER - TY - CHAP A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - In situ measurements of the atomic layer deposition of high-k dielectrics by atomic force microscope for advanced microsystems T2 - International Students and Young Scientists Workshop "Photonics and Microsystems", 2009, 25 - 27 June 2009, Harz University, Wernigerode, Germany KW - atomic layer deposition KW - microsystems KW - high-k dielectrics Y1 - 2009 SN - 978-1-4244-4303-1 SP - 47 EP - 51 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Kolanek, Krzysztof A1 - Schmeißer, Dieter T1 - Nobel "in-situ2" Approach to Modified ALD Processes for Nano-functional Metals Oxide Films KW - in-situ2 KW - ALD KW - nano-functional Y1 - 2009 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Henkel, Karsten A1 - Müller, Klaus A1 - Tallarida, Massimo T1 - Interface Reactions in Ultrathin Functional Dielectric Films KW - ultrathin KW - dielectric Y1 - 2009 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Tallarida, Massimo A1 - Henkel, Karsten A1 - Müller, Klaus A1 - Mandal, Dipankar A1 - Chumakov, Dmytro A1 - Zschech, Ehrenfried T1 - Characterization of oxidic and organic materials with synchrotron radiation based XPS and XAS KW - oxidic KW - organic KW - materials KW - synchrotron radiation KW - XPS KW - XAS Y1 - 2009 ER - TY - GEN A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - HfO2/Si interface formation in atomic layer deposition films: an in situ investigation KW - atomic layer deposition Y1 - 2009 ER - TY - JOUR A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Study of silicon/oxides interfaces by means of Si2p resonant photoemission KW - photoemission KW - Si2p Y1 - 2008 ER - TY - JOUR A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - The initial atomic layer deposition of HfO2/Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy KW - synchrotron KW - photoelectron KW - HfO2 Y1 - 2008 ER - TY - JOUR A1 - Sohal, Rakesh A1 - Lupina, Grzegorz A1 - Lippert, Gunther A1 - Wenger, Christian A1 - Seifarth, Olaf A1 - Schröder, Thomas A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Interface chemistry of high-k PrxAl2-xO3 (x=2-0) dielectrics on TiN for dynamic random access memory applications KW - high-k KW - dielectric KW - random Y1 - 2008 ER - TY - CHAP A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter A1 - Zschech, Ehrenfried T1 - HfO2 ALD-growth studied by in situ photoemission T2 - Proceedings of 15th Workshop on Dielectrics in Micoelectronics, Bad Saarow, 23 - 25 June 2008 KW - ald KW - photoemission Y1 - 2008 SP - 289 EP - 290 ER - TY - GEN A1 - Tallarida, Massimo A1 - Adelmann, Christoph A1 - Delabie, Annelies A1 - Elshocht, Sven van A1 - Caymax, Matty A1 - Schmeißer, Dieter T1 - Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum T2 - Applied physics letters Y1 - 2011 U6 - https://doi.org/10.1063/1.3615784 SN - 1077-3118 VL - 99 IS - 4 SP - 042906-1 EP - 042906-3 ER - TY - GEN A1 - Tallarida, Massimo A1 - Weisheit, Martin A1 - Kolanek, Krzysztof A1 - Michling, Marcel A1 - Engelmann, Hans-Jürgen A1 - Schmeißer, Dieter T1 - Atomic layer deposition of nanolaminate oxide films on Si T2 - Journal of Nanoparticle Research Y1 - 2011 U6 - https://doi.org/10.1007/s11051-011-0319-x VL - 13 IS - 11 SP - 5975 EP - 5983 ER - TY - CHAP A1 - Wyrodek, Jakub A1 - Tallarida, Massimo A1 - Weisheit, Martin A1 - Schmeißer, Dieter T1 - Determination of interfacial layers in high-k nanomaterials by ADXPS measurements Y1 - 2010 ER - TY - CHAP A1 - Starzyk, Łukasz A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Band alignment of high-k/SiO2/Si stacks incorporating Zr and Al oxides prepared by atomic layer deposition Y1 - 2010 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Atomic layer deposition of HfO2 investigated in situ by means of a noncontact atomic force microscopy Y1 - 2010 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Michling, Marcel A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - Atomic layer deposition reactor for fabrication of metal oxides Y1 - 2011 ER - TY - GEN A1 - Tallarida, Massimo A1 - Kukli, Kaupo A1 - Michling, Marcel A1 - Ritala, Mikko A1 - Leskelä, Markku A1 - Schmeißer, Dieter T1 - Substrate Reactivity Effects in the Atomic Layer Deposition of Aluminum Oxide from Trimethylaluminum on Ruthenium T2 - Chemistry of Materials Y1 - 2011 SN - 0897-4756 VL - 23 IS - 13 SP - 3159 EP - 3168 ER - TY - GEN A1 - Tallarida, Massimo A1 - Friedrich, Daniel A1 - Städter, Matthias A1 - Michling, Marcel A1 - Schmeißer, Dieter T1 - Growth of TiO2 with Thermal and Plasma Enhanced Atomic Layer Deposition T2 - Journal of Nanoscience and Nanotechnology Y1 - 2011 SN - 1533-4880 VL - 11 IS - 9 SP - 8049 EP - 8053 ER - TY - GEN A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - Novel "In-situ2" Approach to Modified ALD Processes for Nano-functional Metal Oxide Films Y1 - 2009 ER - TY - GEN A1 - Karavaev, Konstantin A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - In-Situ Studies of ALD Growth of Hafnium Oxide Films Y1 - 2009 ER - TY - JOUR A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Study of bulk and interface defects in silicon oxide with X-ray absorption spectroscopy Y1 - 2007 ER - TY - CHAP A1 - Karavaev, Konstantin A1 - Tallarida, Massimo A1 - Schmeißer, Dieter ED - Vierhaus, Heinrich Theodor T1 - In-situ Atomic Layer Deposition growth of Hafnium oxide T2 - DEDIS-Nano-Days, October 11th and October 12th, 2007 Y1 - 2007 SP - 13 EP - 19 PB - BTU CY - Cottbus ER - TY - JOUR A1 - Tallarida, Massimo A1 - Sohal, Rakesh A1 - Schmeißer, Dieter T1 - Resonant photoemission at the Oxygen K edge as a tool to study the eletronic properties of defects at SiO2/Si and SiO2/SiC interfaces Y1 - 2006 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Michling, Marcel A1 - Schmeißer, Dieter T1 - In situ study of the atomic layer deposition of HfO2 on Si T2 - Journal of Vacuum Science and Technology Y1 - 2012 SN - 0734-2101 IS - A 30 SP - 01A143-1 EP - 01A143-15 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Height distribution of atomic force microscopy images as a tool for atomic layer deposition characterization T2 - Journal of Vacuum Science and Technology : A N2 - The authors propose the analysis of surface height histograms as a tool for the atomic layer deposition (ALD) growth characterization in the initial stage of the process. ALD of HfO2 on a Si(100)/SiO2 substrate was investigated in situ by ultra high vacuum atomic force microscope working in noncontact mode. The ALD cycles, made by using tetrakis-di-methyl-amido-Hf and H2O as precursors, were performed at 230 C. After each ALD cycle, the relation between the film growth and the root mean square surface roughness was studied. Parameters equivalent to HfO2 layer thickness, coverage, and surface roughness of the substrate and deposited material can be calculated in the proposed routine. KW - Atomic layer deposition (ALD) KW - Atomic force microscopy KW - HfO2 KW - height distribution Y1 - 2013 U6 - https://doi.org/10.1116/1.4754557 VL - 31 IS - 1 SP - 01A104-1 EP - 01A104-9 ER - TY - GEN A1 - Kukli, Kaupo A1 - Dimri, Mukesh Chandra A1 - Tamm, Aile A1 - Kemell, Marianna A1 - Käämbre, Tanel A1 - Vehkamäki, Marko A1 - Puttaswamy, Manjunath A1 - Stern, Raivo A1 - Kuusik, Ivar A1 - Kikas, Arvo A1 - Tallarida, Massimo A1 - Schmeißer, Dieter A1 - Ritala, Mikko A1 - Leskelä, Markku T1 - Structural and Magnetic Studies on Iron Oxide and Iron-Magnesium Oxide Thin Films Deposited Using Ferrocene and (Dimethylaminomethyl)ferrocene Precursors T2 - ECS Journal of Solid State Science and Technology N2 - Iron oxide and magnesium-doped iron oxide films were grown by atomic layer deposition in the temperature range of 350–500 ◦C from ferrocene, (dimethylaminomethyl)ferrocene, magnesiumβ-diketonate, and ozone. Phase composition of the films depended on the deposition temperature, as magnetite and/or maghemite tended to form instead of hematite upon lowering the temperature. Iron oxide layers were also mixed with magnesium oxide by alternate deposition of MgO and Fe2O3 which also favored the formation of magnetite or maghemite structure prior to hematite. Scanning electron microscopy implied the smoothening of the films after doping with magnesium oxide. Magnetometry was used to study the effects of temperature and doping levels on the magnetic properties of the films. KW - iron oxide KW - iron magnesium oxide KW - GIXRD KW - Raman spectroscopy KW - X-Ray absorption spectroscopy (XAS) KW - scanning electron microscopy (SEM) KW - magnetization Y1 - 2013 U6 - https://doi.org/10.1149/2.004303jss SN - 2162-8769 VL - 2 IS - 3 SP - N45 EP - N54 ER - TY - GEN A1 - Popovici, Mihaela A1 - Delabie, Annelies A1 - Adelmann, Christoph A1 - Meersschaut, Johan A1 - Franquet, Alexis A1 - Tallarida, Massimo A1 - Berg, Jaap van den A1 - Richard, Olivier A1 - Swerts, Johan A1 - Tomida, Kazuyuki A1 - Kim, Min-Soo A1 - Tielens, Hilde A1 - Bender, Hugo A1 - Conard, Thierry A1 - Jurczak, Malgorzata A1 - Elshocht, Sven van A1 - Schmeißer, Dieter T1 - Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium T2 - ECS Journal of Solid State Science and Technology N2 - The atomic layer deposition of titanium oxide TiO2 on ruthenium and oxidized ruthenium with titanium methoxide as metal precursor and H2O and O3 as oxidant was investigated by Rutherford backscattering (RBS) and time of flight secondary ion mass spectrometry (TOFSIMS). An ultra-thin layer of TiO2 deposited a priori with H2O plays the role of protection of Ru(Ox) substrates against etching by O3. Information about thin films (∼3 nm) interfacial reactions, thickness and structure was brought by Medium Energy Ion Scattering Spectroscopy (MEIS) and X-ray absorption spectroscopy (XAS) measurements. The growth enhancements observed in the first stages of the deposition depends on the pre-treatment (pre-oxidation, H2O based interlayer thickness) of the Ru substrate. Thick films (∼14 nm) were analyzed by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The as deposited TiO2 films are crystalline with rutile structure, as resulted from structural analyzes. However, the presence of small amounts of anatase was detected by soft X-ray absorption spectroscopy (XAS) and is strongly influenced by the surface pre-treatment of the Ru substrate. The electrical properties (equivalent oxide thickness and leakage current density) correlate with a different rutile/anatase ratio present in the films. KW - TiO2 KW - atomic layer deposition KW - rutile KW - RuOx KW - Rutherford backscattering (RBS) KW - time of flight secondary ion mass spectrometry (TOFSIMS) KW - Medium Energy Ion Scattering Spectroscopy (MEIS) KW - X-Ray absorption spectroscopy KW - transmission electron microscopy (TEM) KW - X-ray diffraction (XRD) Y1 - 2013 U6 - https://doi.org/10.1149/2.035301jss SN - 2162-8769 VL - 2 IS - 1 SP - N23 EP - N27 ER - TY - GEN A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - In situALD experiments with synchrotron radiation photoelectron spectroscopy T2 - Semiconductor Science and Technology N2 - In this contribution, we describe some features of atomic layer deposition (ALD) investigated by means of synchrotron radiation photoelemission spectroscopy (SR-PES). In particular, we show how the surface sensitivity of SR-PES combined with the in situ nature of our investigations can point out interactions between the substrate and ALD precursors. We observed changes on all substrates investigated, included Si, GaAs, Ru and their surface oxides. These interactions are extremely important during the first ALD cycles and induce modifications in the substrate, which might lead to its functionality enhancement. KW - Atomic layer deposition (ALD) KW - in situ KW - photoelectron spectroscopy Y1 - 2012 U6 - https://doi.org/10.1088/0268-1242/27/7/074010 SN - 1361-6641 VL - 27 IS - 7 SP - 074010 ER - TY - GEN A1 - Tallarida, Massimo A1 - Adelmann, Christoph A1 - Delabie, Annelies A1 - van Elshocht, Sven A1 - Caymax, Matty A1 - Schmeißer, Dieter T1 - GaAs clean up studied with synchrotron radiation photoemission T2 - IOP Conference Series : Materials Science and Engineering N2 - In this contribution we describe the chemical changes at the surface of GaAs upon adsorption of tri-methyl-aluminum (TMA). TMA is used to grow Al2O3 with atomic layer deposition (ALD) usually using H2O as oxygen source. Recently, it was pointed out that the adsorption of TMA on various III-V surfaces reduces the native oxide, allowing the growth of an abrupt III-V/High-K interface with reduced density of defects. Synchrotron radiation photoemission spectroscopy (SR-PES) is a powerful method to characterize surfaces and interfaces of many materials, as it is capable todetermine their chemical composition as well as the electronic properties. We performed in-situ SR-PES measurements after exposing a GaAs surface to TMA pulses at about 250°C. Upon using the possibility of tuning the incident photon energy we compared the Ga3d spectra at 41 eV, 71 eV, 91 eV and 121 eV, as well as the As3d at 71 eV and 91 eV. Finally, we show that using SR-PES allows a further understanding of the surface composition, which is usually not accessible with other techniques. KW - photoemission spectroscopy KW - atomic layer deposition KW - GaAs Y1 - 2012 U6 - https://doi.org/10.1088/1757-899X/41/1/012003 SN - 1757-899X IS - 41 SP - 012003 ER - TY - CHAP A1 - Schmeißer, Dieter A1 - Richter, Matthias A1 - Tallarida, Massimo ED - Heber, Jörg ED - Schlom, Darrell ED - Tokura, Yoshinori ED - Waser, Rainer ED - Wuttig, Matthias T1 - Intrinsic defects in TiO2 to explain resistive switching devices T2 - Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany KW - resonant photoelectron spectroscopy KW - Auger processes KW - XPS KW - X-ray absorption spectroscopy Y1 - 2012 SN - 978-3-527-41191-7 U6 - https://doi.org/10.1002/9783527667703.ch45 SP - 255 EP - 256 PB - Wiley-VCH CY - Weinheim ER - TY - GEN A1 - Kukli, Kaupo A1 - Kemell, Marianna A1 - Puukilainen, Esa A1 - Aarik, Jaan A1 - Aidla, Aleks A1 - Sajavaara, Timo A1 - Laitinen, Mikko A1 - Tallarida, Massimo A1 - Sundqvist, Jonas A1 - Ritala, Mikko A1 - Leskelä, Markku T1 - Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen T2 - Journal of the Electrochemical Society N2 - Ru films were grown by atomic layer deposition in the temperature range of 275-350 degrees C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO(2), ZrO(2), and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20: 1 aspect ratio. ZrO(2) promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO(2) with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8-10 nm on any surface was necessary. Resistivities in the ranges of 30-60 and 14-16 mu Omega . cm were achieved for 4-6 and 10-15 nm thick films, respectively. Delamination became an issue in the Ru films grown to thicknesses about 10 nm and higher. KW - Atomic layer deposition (ALD) KW - Ruthenium Y1 - 2011 U6 - https://doi.org/10.1149/1.3533387 SN - 0013-4651 VL - 158 IS - 3 SP - D158 EP - D165 ER - TY - CHAP A1 - Tallarida, Massimo T1 - III-V/oxide interfaces investigated with synchrotron radiation photoemission spectroscopy T2 - Meeting Abstracts-Electrochemical Society, Pacific Rim Meeting on Electrochemical and Solid-State Science, Honolulu, 2012 KW - interfaces KW - III/V KW - Synchrotron Photoemission Spectroscopy Y1 - 2012 UR - http://ma.ecsdl.org/content/MA2012-02/31/2587.full.pdf+html N1 - MA2012-02(31) SP - 2587 EP - 2587 PB - The Electrochemical Society ER - TY - GEN A1 - Tallarida, Massimo A1 - Adelmann, Christoph A1 - Delabie, Annelies A1 - Elshocht, Sven van A1 - Caymax, Matty A1 - Schmeißer, Dieter T1 - III-V/Oxide Interfaces Investigated with Synchrotron Radiation Photoemission Spectroscopy T2 - ECS Transactions N2 - We used synchrotron radiation photoemission spectroscopy (SR-PES) to investigate the surface of GaAs and other III-V semiconductors after tri-methyl-aluminum (TMA) pulses performed at 250{degree sign}C. We observed the removal of native oxide and the growth of Al-oxide upon measuring the As3d, Ga3d, Al2p and VB spectra. After seven TMA pulses we performed one water pulse. As3d and Ga3d peaks showed almost no lineshape change, but a decrease of intensity due to the water adsorption. The valence band shows a change in the secondary electron cut-off and the decrease of work function. We conclude that water mostly adsorbs molecularly and induces the work function decrease. The molecular absorption of water indicates that the seven TMA pulses produce a passivated surface only partially terminated with OH groups. KW - Interfaces KW - III/V KW - Synchrotron Photoemission Spectroscopy Y1 - 2013 U6 - https://doi.org/10.1149/05004.0123ecst SN - 1938-6737 VL - 50 IS - 4 SP - 123 EP - 128 ER - TY - GEN A1 - Barreca, Davide A1 - Carraro, Giorgio A1 - Gasparotto, Alberto A1 - Maccato, Chiara A1 - Rossi, Francesca A1 - Salviati, Giancarlo A1 - Tallarida, Massimo A1 - Das, Chittaranjan A1 - Fresno, Fernando A1 - Korte, Dorota A1 - Štangar, Urška Lavrenčič A1 - Franko, Mladen A1 - Schmeißer, Dieter T1 - Surface Functionalization of Nanostructured Fe2O3 Polymorphs: From Design to Light-Activated Applications T2 - ACS Applied Materials & Interfaces N2 - Nanostructured iron(III) oxide deposits are grown by chemical vapor deposition (CVD) at 400−500 °C on Si(100) substrates from Fe(hfa)2TMEDA (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; TMEDA = N,N,N′N′-tetramethylethylenediamine), yielding the selective formation of α-Fe2O3or the scarcely studiedε-Fe2O3 polymorphs under suitably optimized preparative conditions. By using Ti(OPr i)4(OPri= iso-propoxy) and water asatomic layer deposition (ALD) precursors, we subsequently functionalized the obtained materials at moderate temperatures (<300°C) by an ultrathin titanomagnetite (Fe3−xTixO4) overlayer. An extensive multitechnique character-ization, aimed at elucidating the system structure, morphology, composition and optical properties, evidenced that the photoactivated hydrophilic and photocatalytic behavior of the synthesized materials is dependent both on iron oxide phase composition and ALD surface modification. The proposed CVD/ALD hybrid synthetic approach candidates itself as a powerful tool for a variety of applications where semiconductor-based nanoarchitectures can benefit from the coupling with an ad hoc surface layer. KW - chemical vapor deposition KW - atomic layer deposition KW - iron oxide KW - titanomagnetite KW - photoactivated properties Y1 - 2013 U6 - https://doi.org/10.1021/am401475g SN - 1944-8252 VL - 5 IS - 15 SP - 7130 EP - 7138 ER - TY - GEN A1 - Adelmann, Christoph A1 - Cuypers, Daniel A1 - Tallarida, Massimo A1 - Rodriguez, Leonard A1 - De Clercq, Astrid A1 - Friedrich, Daniel A1 - Conard, Thierry A1 - Delabie, Annelies A1 - Seo, Jin Won A1 - Locquet, Jean-Pierre A1 - De Gendt, Stefan A1 - Schmeißer, Dieter A1 - Elshocht, Sven van A1 - Caymax, Matty T1 - Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide T2 - Chemistry of Materials N2 - The surface chemistry and the interface formation during the initial stages of the atomic layer deposition (ALD) of Al2O3 from trimethylaluminum (TMA) and H2O on InP(100)were studied by synchrotron radiation photoemission spectroscopy and scanning tunneling microscopy. The effect of the ex situ surface cleaning by either H2SO4 or (NH4)2S was examined. It is shown that the native oxide on the InP surface consisted mainly of indium hydrogen phosphates with a P enrichment at the interface with InP. After a (NH4)2S treatment, S was present on the surface as a sulfide in both surface and subsurface sites. Exposure to TMA led to the formation of a thin AlPO4 layer, irrespective of the surface cleaning. The surface Fermi level of p-type InP was found to be pinned close to midgap after H2SO4 cleaning and moved only slightly further toward the conduction band edge upon TMA exposure, indicating that the AlPO4/InP interface was rather defective. (NH4)2S passivation led to a Fermi level position of p-type InP close to the conduction band edge. Hence, the InP surface was weakly inverted, which can be attributed to surface doping by S donors. TMA exposure was found to remove surface S, which was accompanied by a shift of the Fermi level to midgap, consistent with the removal of (part of) the S donors in combination with a defective AlPO4/InP interface. Further TMA/H2O ALD did not lead to any detectable changes of the AlPO4/InP interface and suggested simple overgrowth with Al2O3. Y1 - 2013 U6 - https://doi.org/10.1021/cm304070h SN - 1520-5002 VL - 25 IS - 7 SP - 1078 EP - 1091 ER - TY - GEN A1 - Rossi, Francesca A1 - Fabbri, Filippo A1 - Tallarida, Massimo A1 - Schmeißer, Dieter A1 - Modreanu, Mircea A1 - Attolini, Giovanni A1 - Salviati, Giancarlo T1 - Structural and luminescence properties of HfO2 nanocrystals grown by atomic layer deposition on SiC/SiO2 core/shell nanowires T2 - Scripta Materialia N2 - In this work we report the morphological, structural and luminescence properties of HfO2 nanocrystals grown on the surface of SiC/SiO2 core/shell nanowires by atomic layer deposition. All the studies are carried out in comparison with HfO2 nanocrystal aggregates grown on planar oxidized silicon substrates. The structural analyses reveal that HfO2has monoclinic structure with dif-ferent orientations. The cathodoluminescence emission shows the main components at 2.7 and 2.3 eV, deeply influenced by the arrangement and aggregation of the nanocrystals. KW - Silicon carbide KW - Silicon dioxide KW - Nanowires KW - Hafnium oxide KW - Nanocrystals Y1 - 2013 U6 - https://doi.org/10.1016/j.scriptamat.2013.08.017 SN - 1359-6462 VL - 69 IS - 10 SP - 744 EP - 747 ER - TY - GEN A1 - Haeberle, Jörg A1 - Henkel, Karsten A1 - Gargouri, Hassan A1 - Naumann, Franziska A1 - Gruska, Bernd A1 - Arens, Michael A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films T2 - Beilstein Journal of Nanotechnology N2 - We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlatethem to X-ray photoelectron spectroscopy (XPS) results. The 200°C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films. KW - Al2O3 KW - ALD KW - ellipsometry KW - PE-ALD KW - XPS Y1 - 2013 U6 - https://doi.org/10.3762/bjnano.4.83 SN - 2190-4286 VL - 2013 IS - 4 SP - 732 EP - 742 ER - TY - CHAP A1 - Cuypers, Daniel A1 - Dorp, Dennis H. von A1 - Tallarida, Massimo A1 - Brizzi, Simone A1 - Rodriguez, Leonard A1 - Conard, Thierry A1 - Arnauts, Sophia A1 - Schmeißer, Dieter A1 - Adelmann, Christoph A1 - De Gendt, Stefan T1 - Study of InP Surfaces After Wet Chemical Treatments T2 - Meeting Abstracts-Electrochemical Society, San Francisco, 2013 KW - Synchrotron Radiation Photoelectron Spectroscopy KW - InP KW - Wet chemical treatment Y1 - 2013 UR - http://ma.ecsdl.org/content/MA2013-02/30/2132.full.pdf+html N1 - MA2013-02(30) SP - S. 2132 PB - The Electrochemical Society ER - TY - GEN A1 - Cuypers, Daniel A1 - Dorp, Dennis H. von A1 - Tallarida, Massimo A1 - Brizzi, Simone A1 - Rodriguez, Leonard A1 - Conard, Thierry A1 - Arnauts, Sophia A1 - Schmeißer, Dieter A1 - Adelmann, Christoph A1 - De Gendt, Stefan T1 - Study of InP Surfaces after Wet Chemical Treatments T2 - ECS Transactions N2 - In this work synchrotron radiation photoemission spectroscopy (SRPES) is used to study InP surfaces after different wet chemical treatments. All results are compared to a typical fingerprint of surface components present on an as received InP sample. It is shown that acidified (HCl and H₂SO₄) treatments efficiently remove the native phosphate, although components like Pᴼ, Inᴼ and P(2±∆)+ remain present. In alkaline solution (NH₄OH) oxide remains present at the surface. As an alternative treatment, the immersion into (NH₄)₂S was studied. This passivation treatment results in fewer surface components which suggests that a higher quality surface is obtained. KW - Synchrotron Radiation Photoelectron Spectroscopy KW - InP KW - Wet chemical treatment Y1 - 2013 U6 - https://doi.org/10.1149/05806.0297ecst SN - 1938-6737 SN - 1938-5862 VL - 58 IS - 6 SP - 297 EP - 303 ER - TY - GEN A1 - Cuypers, Daniel A1 - Dorp, Dennis H. von A1 - Tallarida, Massimo A1 - Brizzi, Simone A1 - Conard, Thierry A1 - Rodriguez, Leonard A1 - Mees, M. A1 - Arnauts, Sophia A1 - Schmeißer, Dieter A1 - Adelmann, Christoph A1 - De Gendt, Stefan T1 - Study of InP Surfaces after Wet Chemical Treatments T2 - ECS Journal of Solid State Science and Technology N2 - The influence of different wet chemical treatments (HCl, H₂SO₄, NH₄OH) on the composition of InP surfaces is studied by using synchrotron radiation photoemission spectroscopy (SRPES). It is shown that a significant amount of oxide remains present after immersion in a NH₄OH solution which is ascribed to the insolubility of In³⁺ at higher pH values. Acidic treatments efficiently remove the native oxide, although components like Pᴼ, Inᴼ and P(2±Δ)+ suboxides are observed. Alternatively, the influence of a passivation step in (NH₄)₂S solution on the surface composition was investigated. The InP surface after immersion into (NH₄)₂S results in fewer surface components, without detection of Pᴼ and P(2±Δ)+ suboxides. Finally, slight etching of InP surfaces in HCl/H₂O₂ solution followed by a native oxide removal step, showed no significant effect on the surface composition. KW - Synchrotron Radiation Photoelectron Spectroscopy KW - Scanning Tunneling Microscopy KW - InP KW - Wet chemical treatment Y1 - 2014 U6 - https://doi.org/10.1149/2.005401jss SN - 2162-8777 SN - 2162-8769 VL - 3 IS - 1 SP - N3016 EP - N3022 ER - TY - GEN A1 - Das, Chittaranjan A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Linear dichroism in ALD layers of TiO₂ T2 - Environmental Earth Sciences N2 - We prepare TiO₂film by ALD and study their electronic properties by soft X-ray absorption spectroscopy (XAS) and photoelectron spectroscopy. We focus on XAS and X-ray linear dichroism to indentify band onset and learn about local distortion of the Ti–O octahedral atomic and about defects which cause Ti-based electronic states within the band gap. KW - Anatase KW - Dichroism KW - Amorphous Y1 - 2013 U6 - https://doi.org/10.1007/s12665-013-2836-7 SN - 1866-6280 VL - 70 IS - 8 SP - 3785 EP - 3795 ER - TY - GEN A1 - Henkel, Karsten A1 - Gargouri, Hassan A1 - Gruska, Bernd A1 - Arens, Michael A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by PE-ALD at 25°C ≤ T ≤ 200°C T2 - Journal of Vacuum Science and Technology A N2 - In this work, plasma enhanced atomic layer deposited (PE-ALD) samples were prepared at substrate temperatures in the range between room temperature (RT) and 200 °C and investigated by capacitance–voltage and conductance–voltage recordings. The measurements are compared to standard thermal atomic layer deposition (T-ALD) at 200 °C. Very low interface state density (D it) ~1011 eV−1 cm−2 could be achieved for the PE-ALD process at 200 °C substrate temperature after postdeposition anneal (PDA) in forming gas at 450 °C. The PDA works very effectively for both the PE-ALD and T-ALD at 200 °C substrate temperature delivering also similar values of negative fixed charge density (N fix) around −2.5 × 1012 cm−2. At the substrate temperature of 150 °C, highest N fix (−2.9 × 1012 cm−2) and moderate D it (2.7 × 1011 eV−1 cm−2) values were observed. The as deposited PE-ALD layer at RT shows both low D it in the range of (1 to 3) × 1011 eV−1 cm−2 and low N fix (−4.4 × 1011 cm−2) at the same time. The dependencies of N fix, D it, and relative permittivity on the substrate temperatures and its adjustability are discussed. KW - Atomic layer deposition (ALD) KW - Al2O3 KW - dielectric properties KW - interface state density KW - fixed oxide charge KW - permittivity Y1 - 2014 UR - http://link.aip.org/link/?JVA/32/01A107&aemail=author U6 - https://doi.org/10.1116/1.4831897 VL - 1 IS - 32 SP - 01A107-1 EP - 01A107-10 ER - TY - GEN A1 - Tallarida, Massimo A1 - Das, Chittaranjan A1 - Schmeißer, Dieter T1 - Quantum size effects in TiO2 thin films grown by atomic layer deposition T2 - Beilstein Journal of Nanotechnology N2 - We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems. KW - atomic layer deposition (ALD) KW - charge transfer multiplet KW - covalency KW - energy conversion KW - quantum size effects KW - titanium dioxide (TiO2) KW - water splitting KW - X-ray absorption spectroscopy (XAS) Y1 - 2014 U6 - https://doi.org/10.3762/bjnano.5.7 SN - 2190-4286 IS - 5 SP - 77 EP - 82 ER -