TY - GEN A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Paloumpa, Ioanna A1 - Müller, Klaus A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Grenzflächenoptimierung für funktionale Dünnschichtsysteme: Oxide und Polymere T2 - Forum der Forschung Y1 - 2005 SN - 0947-6989 VL - 9 IS - 18 SP - 49 EP - 56 ER - TY - GEN A1 - Henkel, Karsten A1 - Torche, Mohamed A1 - Sohal, Rakesh A1 - Karavaev, Konstantin A1 - Burkov, Yevgen A1 - Schwiertz, Carola A1 - Schmeißer, Dieter T1 - Pr-O-Al-N dielectrics for metal insulator semiconductor stacks KW - semiconductor KW - dielectric Y1 - 2011 ER - TY - JOUR A1 - Sohal, Rakesh A1 - Lupina, Grzegorz A1 - Lippert, Gunther A1 - Wenger, Christian A1 - Seifarth, Olaf A1 - Schröder, Thomas A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Interface chemistry of high-k PrxAl2-xO3 (x=2-0) dielectrics on TiN for dynamic random access memory applications KW - high-k KW - dielectric KW - random Y1 - 2008 ER - TY - CHAP A1 - Henkel, Karsten A1 - Burkov, Yevgen A1 - Bergholz, Matthias A1 - Karavaev, Konstantin A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Schmeißer, Dieter T1 - Al-Oxynitride as a buffer layer for high-k dielectrics T2 - Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin) KW - buffer layer KW - high-k KW - dielectric Y1 - 2008 SP - 161 EP - 162 ER - TY - CHAP A1 - Sohal, Rakesh A1 - Henkel, Karsten A1 - Müller, Klaus A1 - Schmeißer, Dieter T1 - Growth and Characterization of 3C-SiC thin films on Si substrates T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - This work reports on the growth and characterization of cubic silicon carbide thin films. A cold wall low pressure chemical vapour deposition (LPCVD) system has been used to grow the cubic silicon carbide. The two step method, carbonization and subsequent growth, has been used to grow good quality 3C-SiC thin films. The composition and structure of deposited thin films have been analysed by Fourier Transform Infrared Spectroscopy (FTIR), XPS and X-Ray Diffractometry (XRD). The structural quality of the films has been optimized as a function of substrate temperature during carbonization and growth. X-rays diffraction measurements shows that the grown layers are highly oriented crystalline cubic silicon carbide. KW - low pressure chemical vapor deposition (LPCVD) KW - 3C-SiC KW - X-ray photoelectron spectroscopy (XPS) KW - Fourier Transform Infrared Spectroscopy (FTIR) KW - X-Ray diffraction Y1 - 2005 UR - http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/hl/session/58/contribution/50?lan=en PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - JOUR A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Schmeißer, Dieter A1 - Schwiertz, Carola A1 - Burkov, Yevgen A1 - Torche, Mohamed T1 - Al-oxynitride buffer layer facilities for PrOx/SiC interfaces Y1 - 2007 ER - TY - CHAP A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Schwiertz, Carola A1 - Burkov, Yevgen A1 - Schmeißer, Dieter T1 - PrOx/AlON stacks as a high-k candidate on SiC T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 42 N2 - We study the chemical stability and electrical properties of Pr-oxides-SiC MIS stacks. In MISFET devices for high power applications the electric field scaling at the interface between semiconductor and insulator is determined by the ratio of their permittivity values. A high-k material can be used to optimize the performance of such devices. In previous studies we had to understand that the chemical reactivity of the PrOx/SiC interface causes a destructive interaction yielding silicate and graphite formation as well as poor electrical performance after direct deposition of PrOx onto SiC. Therefore we introduced an additional chemically inert layer and in this contribution we focus on PrOx/AlON as a suitable insulator stack. In our spectroscopic investigations we recognized a stable AlON/3C-SiC interface even for annealing steps up to 900∘C. First electrical characterizations are performed on Si substrates and we find a strong improvement in the leakage current by several orders of magnitude down to values of 10−7 A/cm2 at an EOT of 4nm and interface state densities of mean values of 5*1011/eVcm2. We also report on our ongoing electrical characterization of such stacks on SiC substrates. This work is supported by Deutsche Forschungsgemeinschaft within priority program 1157 (DSCH 745/9-2). Y1 - 2007 UR - http://www.dpg-verhandlungen.de/year/2007/conference/regensburg/part/df/session/10/contribution/8 SN - 0420-0195 SP - S. 215 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Tallarida, Massimo A1 - Sohal, Rakesh A1 - Schmeißer, Dieter T1 - Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO2/Si and SiO2/SiC interfaces Y1 - 2006 ER - TY - CHAP A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Schmeißer, Dieter T1 - Al-Oxynitrides as a Buffer Layer for Pr2O3/SiC Interfaces Y1 - 2006 ER - TY - THES A1 - Sohal, Rakesh T1 - CVD growth of (001) and (111) 3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers KW - Siliciumcarbid KW - Kristallfläche KW - Dielektrische Schicht KW - CVD-Verfahren Y1 - 2006 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-121 UR - http://opus4.kobv.de/opus4-btu/frontdoor/index/index/docId/13 ER - TY - CHAP A1 - Henkel, Karsten A1 - Torche, Mohamed A1 - Sohal, Rakesh A1 - Schwiertz, Carola A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter ED - Dudley, Michael T1 - Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces T2 - Silicon carbide 2006 - materials, processing and devices, symposium held April 18 - 20, 2006, San Francisco, California, U.S.A. Y1 - 2006 SN - 978-1-55899-867-4 SP - 353 EP - 358 PB - Materials Research Society CY - Warrendale, Pa. ER - TY - JOUR A1 - Tallarida, Massimo A1 - Sohal, Rakesh A1 - Schmeißer, Dieter T1 - Resonant photoemission at the Oxygen K edge as a tool to study the eletronic properties of defects at SiO2/Si and SiO2/SiC interfaces Y1 - 2006 ER - TY - CHAP A1 - Tallarida, Massimo A1 - Sohal, Rakesh A1 - Schmeißer, Dieter T1 - Electronic properties of the 2x1 3C-SiC surface reconstruction studied with resonant photoemission T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41 N2 - We have studied the 2x1 reconstructed surface of the 3C-SiC polytype by means of photoemission spectroscopy. The reconstruction was characterized through Si2p and C1s core level and angle-integrated valence band spectroscopy, and confirmed by the observation of a two-domain 2x1 LEED pattern. The electronic properties of this surface were investigated by collecting valence band spectra at photon energies near the Si2p and C1s absorption edges. The results show a strong dependence of the photoemission intensity on the excitation energy with characteristic resonances for certain valence band features. With a detailed study of the resonances we are able to assign the electronic origin of the resonating states and the nature of the electronic transition near the absorption edges. Y1 - 2006 UR - http://www.dpg-verhandlungen.de/year/2006/conference/dresden/part/hl/session/5/contribution/2 SN - 0420-0195 SP - S. 239 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Henkel, Karsten A1 - Torche, Mohamed A1 - Schwiertz, Carola A1 - Paloumpa, Ioanna A1 - Sohal, Rakesh A1 - Müller, Klaus A1 - Schmeißer, Dieter T1 - Inorganic and organic layers for high-k and organic memory applications T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41 N2 - We report about organic and inorganic MIS stacks for new possibilities for high frequency and high power applications as well as for non volatile memory cell. The organic stack contains a ferroelectric polymer as the functional layer. Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is spin coated from a solution onto oxidised silicon substrates. We report on the polarisation induced flatband voltage shifts. For the inorganic stack our attempt is to combine higk-k dielectrics with high band gap semiconductors (SiC). Praseodymium oxide layers are prepared by electron beam evaporation from Pr6O11 powder and in situ controlling of interface and volume composition (XPS). Praseodymium silicate layers were prepared either by metal evaporation onto a thin ox- ide on top of the semiconductor and following annealing steps or by a wet chemical process out of aqueous Pr(NO3)3 solutions. Using spectro-scopic characterisation we investigate the stability of the various inter-faces within the stacks as well as the reactivity of the metal electrodes on thin Pr2O3. We report the results of electrical characterisation consisting of permittivity values, leakage current and density of interface states. Y1 - 2006 UR - http://www.dpg-verhandlungen.de/year/2006/conference/dresden/part/df/session/1/contribution/4 SN - 0420-0195 SP - S. 127 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Bergholz, Matthias A1 - Sohal, Rakesh A1 - Schmeißer, Dieter T1 - ELS to determine the band gap of thin dielectric layers T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41 N2 - In ultra thin layers of high-K materials the value of the band gap can be derived not explicitly although it is a key quantity in the electric behavior. We use ELS with a monochromatized (50 meV - 150 meV) electron gun and primary energies between 20 eV and 30 eV. Starting with the native SiO2/Si(001) layers we find that loss function of the substrate dominates for using primary energies beyond 50 eV. In contrast at energies below 50 eV the loss intensity can be used to derived the band gap with an accuracy of ±200 meV. We compare thin (<3 nm) films of HfOx, Pr2O3,Al2O3 and Si-Oxynitrides and discuss the band gap values as well as the scattered intensity observed within the gap. Y1 - 2006 UR - http://www.dpg-verhandlungen.de/year/2006/conference/dresden/part/ds/session/8/contribution/2 SN - 0420-0195 SP - S. 156 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - JOUR A1 - Sohal, Rakesh T1 - Pr-Silicate formation on SiO2 covered SiC surfaces Y1 - 2005 ER -