TY - GEN A1 - Skibitzki, Oliver A1 - Hatami, Fariba A1 - Yamamoto, Yuji A1 - Zaumseil, Peter A1 - Trampert, A. A1 - Schubert, Markus Andreas A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - GaP collector development for SiGe HBT performance increase: A heterostructure growth study T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3701583 SN - 0021-8979 VL - 111 IS - 7 SP - 073515 EP - 073515-9 ER - TY - GEN A1 - Zaumseil, Peter A1 - Yamamoto, Yuji A1 - Schubert, M. A1 - Capellini, Giovanni A1 - Skibitzki, Oliver A1 - Zöllner, Marvin Hartwig A1 - Schroeder, Thomas T1 - Tailoring the strain in Si nano-structures for defect-free epitaxial Ge overgrowth T2 - Nanotechnology Y1 - 2015 U6 - https://doi.org/10.1088/0957-4484/26/35/355707 SN - 1361-6528 VL - 26 IS - 35 SP - 355707 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Lupina, Grzegorz A1 - Niermann, Tore A1 - Salvalaglio, Marco A1 - Marzegalli, Anna A1 - Schubert, Markus Andreas A1 - Zaumseil, Peter A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Montalenti, Francesco A1 - Xie, Ya-Hong A1 - Schröder, Thomas T1 - Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns T2 - ACS Applied Materials and Interfaces Y1 - 2016 SN - 1944-8252 VL - 8 IS - 3 SP - 2017 EP - 2026 ER - TY - GEN A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Skibitzki, Oliver A1 - Capellini, Giovanni A1 - Schröder, Thomas T1 - Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon T2 - Solid State Phenomena Y1 - 2016 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.402 SN - 1662-9779 SN - 0377-6883 VL - 242 SP - 402 EP - 407 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Schubert, Markus Andreas A1 - Niermann, Tore A1 - Zaumseil, Peter A1 - Katzer, Jens A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Xie, Ya-Hong A1 - Känel, Hans von A1 - Schröder, Thomas T1 - Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers T2 - Scientific Reports Y1 - 2016 U6 - https://doi.org/10.1038/srep22709 SN - 2045-2322 VL - 6 SP - 22709 ER - TY - GEN A1 - Engelhard, M. A1 - Klemp, C. A1 - Behringer, M. A1 - Rudolph, A. A1 - Skibitzki, Oliver A1 - Zaumseil, Peter A1 - Schröder, Thomas T1 - Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth T2 - Journal of Applied Physics Y1 - 2016 U6 - https://doi.org/10.1063/1.4955333 SN - 1089-7550 SN - 0021-8979 VL - 120 IS - 4 SP - 045301 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Hatami, Fariba A1 - Bartolomeo, Antonio di A1 - Niermann, Tore A1 - Hameed, Hussein Emad A1 - Schubert, Markus Andreas A1 - Krause, Hans-Michael A1 - Zaumseil, Peter A1 - Skibitzki, Oliver A1 - Masselink, William T. A1 - Lehmann, Michael A1 - Xie, Ya-Hong A1 - Schröder, Thomas T1 - Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b09592 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 40 SP - 26948 EP - 26955 ER - TY - GEN A1 - Skibitzki, Oliver A1 - Capellini, Giovanni A1 - Yamamoto, Yuji A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Schröder, Thomas A1 - Ballabio, Andrea A1 - Bergamaschini, Roberto A1 - Salvalaglio, Marco A1 - Miglio, Leo A1 - Montalenti, Francesco T1 - RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b07694 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 39 SP - 26374 EP - 26380 ER - TY - GEN A1 - Schlykow, Viktoria A1 - Klesse, Wolfgang Matthias A1 - Niu, Gang A1 - Taoka, Noriyuki A1 - Yamamoto, Yuji A1 - Skibitzki, Oliver A1 - Barget, M. R. A1 - Zaumseil, Peter A1 - Känel, Hans von A1 - Schubert, Markus Andreas A1 - Capellini, Giovanni A1 - Schroeder, Thomas T1 - Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001) T2 - Applied Physics Letters Y1 - 2016 U6 - https://doi.org/10.1063/1.4967500 SN - 1077-3118 VL - 109 IS - 20 SP - 202102 ER - TY - GEN A1 - Lange, Felix A1 - Ernst, Owen C. A1 - Teubner, Thomas A1 - Richter, Carsten A1 - Schmidbauer, Martin A1 - Skibitzki, Oliver A1 - Schroeder, Thomas A1 - Schmidt, Peer A1 - Boeck, Torsten T1 - In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates T2 - Nano Futures N2 - Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 μm−2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si–Au droplets with SixGe1−x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements. KW - Crystal growth KW - Silicon KW - Germanium KW - Phase diagram Y1 - 2020 UR - https://iopscience.iop.org/article/10.1088/2399-1984/ab82a0 U6 - https://doi.org/10.1088/2399-1984/ab82a0 SN - 2399-1984 VL - 4 IS - 3 SP - 1 EP - 8 ER - TY - GEN A1 - Tetzner, Henriette A1 - Fischer, Inga Anita A1 - Skibitzki, Oliver A1 - Mirza, M. M. A1 - Manganelli, Constanza Lucia A1 - Luongo, G. A1 - Spirito, Davide A1 - Douglas, J. P. A1 - De Seta, Monica A1 - Capellini, Giovanni T1 - Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001) T2 - Applied Physics Letters Y1 - 2021 U6 - https://doi.org/10.1063/5.0064477 SN - 1077-3118 SN - 0003-6951 VL - 119 IS - 15 ER - TY - GEN A1 - Tetzner, Henriette A1 - Seifert, W. A1 - Skibitzki, Oliver A1 - Yamamoto, Yuji A1 - Lisker, Marco A1 - Mirza, M. M. A1 - Fischer, Inga Anita A1 - Paul, Douglas J. A1 - De Seta, Monica A1 - Capellini, Giovanni T1 - Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001) T2 - Applied Physics Letter Y1 - 2023 U6 - https://doi.org/10.1063/5.0152962 SN - 1077-3118 VL - 122 IS - 24 ER - TY - GEN A1 - Schlipf, Jon A1 - Cutolo, Maria Alessandra A1 - Manganelli, Costanza Lucia A1 - Reiter, Sebastian A1 - Seibold, Götz A1 - Skibitzki, Oliver A1 - Wenger, Christian A1 - Fischer, Inga Anita T1 - Fabrication and optical characterization of CMOS-compatible honeycomb-like large-scale lattices of near-field coupled plasmonic TiN nanotriangles T2 - Advanced optical materials N2 - Honeycomb-like plasmonic titanium nitride nanotriangle arrays defined by photolithography and fabricated in a modified silicon-germanium electronic–photonic integrated circuit process in a state-of-the-art pilot line. The nanotriangle arrays are characterized in experiments and simulations. The momentum-dependent reflectance spectra exhibit not only features that are consistent with surface lattice resonances in the honeycomb lattice but also minima governed by near-field coupling of the individual nanotriangles. The optical characterization results in combination with simulation-based predictions indicate that such nanotriangle arrays are capable of supporting collective plasmonic resonances that can be described as massless Dirac particles. The fabrication approach opens up the possibility of integrating the structures into device fabrication processes, and avenues toward near-infrared sensing and communication applications are predicted. KW - Plasmonic Nanostructures KW - Optics of Nanostructures Y1 - 2025 UR - https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adom.202403408 U6 - https://doi.org/10.1002/adom.202403408 SN - 2195-1071 VL - 2025 SP - 1 EP - 8 PB - Wiley-VCH CY - Weinheim ER -