TY - GEN A1 - Schwartz, Bernhard A1 - Klossek, Andre A1 - Kittler, Martin A1 - Oehme, Michael A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Electroluminescence of Germanium-LEDs on Silicon T2 - Physica Status Solidi C Y1 - 2014 U6 - https://doi.org/10.1002/pssc.201400056 VL - 11 IS - 11-12 SP - 1686 EP - 1691 ER - TY - GEN A1 - Oehme, Michael A1 - Widmann, Daniel A1 - Kostecki, Konrad A1 - Zaumseil, Peter A1 - Schwartz, Bernhard A1 - Gollhofer, Martin A1 - Körner, Roman A1 - Bechler, Stefan A1 - Kittler, Martin A1 - Kasper, Erich A1 - Schulze, Jörg T1 - GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates T2 - Optics Letters Y1 - 2014 U6 - https://doi.org/10.1364/OL.39.004711 SN - 1539-4794 VL - 39 IS - 16 SP - 4711 EP - 4714 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Saring, Philipp A1 - Arguirov, Tzanimir V. A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, J. A1 - Kittler, Martin T1 - Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.361 SN - 1012-0394 VL - 242 SP - 361 EP - 367 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Influence of strain, donor concentration, carrier confinement, and dislocation density on the efficiency of luminiscence of Ge-based structures on Si substrate T2 - Physica Status Solidi : C, Current Topics in Solid State Physics Y1 - 2017 UR - http://onlinelibrary.wiley.com/doi/10.1002/pssc.201700018/full SN - 1610-1642 VL - 14 IS - 7 SP - 1700018-1 EP - 1700018-5 ER - TY - GEN A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Schwartz, Bernhard A1 - Uebensee, Hartmut A1 - Kosina, Hans A1 - Stanojevic, Zlatan A1 - Baumgartner, Oskar A1 - Ortlepp, Thomas T1 - Transport of Charge Carriers along Dislocations in Si and Ge T2 - Physica status solidi. A, Applications and materials science N2 - Experimental observations and quantum mechanical device simulations point to different electronic properties of dislocations in silicon and germanium. The experimental data suggest a supermetallic behavior of the dislocations in Si and thus the high strain in the dislocation core is thought to cause the confinement of the charge carriers, which leads to the formation of a 1D electron gas along a dislocation (quantum wire). The resulting significant increase in the electron concentration corresponds to a marked increase in the drain current of metal–oxide–semiconductor field‐effect transistor (MOSFET). The specific resistance of an individual dislocation in Ge is about nine orders of magnitude higher than for a dislocation in Si. The experimental measurements of the strain in dislocation cores in Ge are still missing. Based on the band structure data, the generation of a strain equivalent to that of the dislocation cores in Si appears to be very challenging because of the transition from an indirect into a direct semiconductor with about tenfold lower strain levels. The lower strain in the dislocation core in germanium may not support the carrier confinement as proposed for the dislocation core of silicon, and consequently 1D electron gases are not expected to form along the dislocations in Ge. Y1 - 2019 U6 - https://doi.org/10.10002/pssa.201900287 SN - 1862-6319 VL - Volume 216 IS - 17 ER - TY - CHAP A1 - Schwartz, Bernhard A1 - Oehme, Michael A1 - Körner, Roman A1 - Bechler, Stefan A1 - Schulze, Jörg A1 - Kittler, Martin T1 - Luminescence of strained Ge on GeSn virtual substrate grown on Si (001) T2 - Silicon Photonics XII, 30 January-1 February 2017, San Francisco, California, United States Y1 - 2017 SN - 978-1-5106-0657-9 U6 - https://doi.org/10.1117/12.2249564 PB - SPIE CY - Bellingham, Washington ER - TY - THES A1 - Schwartz, Bernhard T1 - Germanium-Laser für die Silizium-Photonik Y1 - 2019 UR - https://opus4.kobv.de/opus4-btu/frontdoor/index/index/docId/4864 U6 - https://doi.org/10.26127/BTUOpen-4864 ER - TY - GEN A1 - Wendav, Torsten A1 - Fischer, Inga Anita A1 - Virgilio, Michele A1 - Capellini, Giovanni A1 - Oliveira, F. A1 - Cerqueira, M. F. A1 - Benedetti, A. A1 - Chiussi, Stefano A1 - Zaumseil, Peter A1 - Schwartz, Bernhard A1 - Busch, Kurt A1 - Schulze, J. T1 - Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling T2 - Physical Review B 94 Y1 - 2016 U6 - https://doi.org/10.1103/PhysRevB.94.245304 VL - 94 IS - 24 SP - 245304 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Temperature dependence of luminescence from dislocated Ge on Si substrate T2 - Materials Today: Proceedings N2 - For mono-crystalline Ge the indirect luminescence intensity declines upon growing temperature from 80 to 300 K, whereas for dislocated Ge structures the opposite behavior occurs. These findings are comparable to earlier observations on Si. The drop of the luminescence in dislocated material upon lowering temperature was attributed to the increase of the competing non-radiative recombination due to shallow dislocation states. In opposition to the indirect luminescence, the character of the direct Ge luminescence, i.e. incline of intensity upon growing temperature, is not converted by dislocations. The measured behavior of the direct peak position of Ge, in the temperature range between 80 and 300 K, is in accordance with calculated dependence and reflects the direct bandgap energy. The observed red shifts in dislocated Ge structures are shown to be produced by tensile strain, bandgap narrowing and by the Sn-content of GeSn quantum wells, respectively. A direct influence of dislocations could not be observed. Satisfying understanding of the existing temperature behavior of the indirect Ge peak position is on embryonic stage Y1 - 2018 U6 - https://doi.org/10.1016/j.matpr.2018.03.061 SN - 2214-7853 VL - 5 IS - 3,1 SP - 14712 EP - 14721 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers T2 - Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States Y1 - 2015 U6 - https://doi.org/10.1117/12.2080816 PB - International Society for Optics and Photonics ER - TY - GEN A1 - Schwartz, Bernhard A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Widmann, Daniel A1 - Gollhofer, Martin A1 - Körner, Roman A1 - Bechler, Stefan A1 - Fischer, Inga Anita A1 - Wendav, Torsten A1 - Kasper, Erich A1 - Schulze, Jörg A1 - Kittler, Martin T1 - Electroluminescence of GeSn/Ge MQW LEDs on Si substrate T2 - Optics Letters Y1 - 2015 U6 - https://doi.org/10.1364/OL40.003209 VL - 40 IS - 13 SP - 3209 EP - 3212 ER - TY - GEN A1 - Körner, Roman A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Augel, Lion A1 - Bechler, Stefan A1 - Hänel, Linda A. A1 - Kern, Michael A1 - Oehme, Michael A1 - Rolseth, Erlend Granbo A1 - Schwartz, Bernhard A1 - Weißhaupt, David A1 - Zhang, Wogong A1 - Schulze, Jörg T1 - The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Drect Zener Tunneling Monolithically Integrated on Si T2 - 2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016 Y1 - 2016 SN - 978-1-5090-3901-2 SN - 978-1-5090-3902-9 SP - 22.5.1 EP - 22.5.4 PB - IEEE CY - Piscataway, NJ ER -