TY - GEN A1 - Schwartz, Bernhard A1 - Saring, Philipp A1 - Arguirov, Tzanimir V. A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, J. A1 - Kittler, Martin T1 - Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.361 SN - 1012-0394 VL - 242 SP - 361 EP - 367 ER - TY - GEN A1 - Martienssen, Marion A1 - Simon, J. A1 - Schulze, R. T1 - Untersuchungen zum Einsatz von aufbereiteter Kfz-Kühlerflüssigkeit als organische C-Quelle bei der biologischen Sickerwasserbehandlung T2 - Korrespondenz Abwasser Y1 - 1997 SN - 0341-1540 VL - 44 IS - 9 SP - 1622 EP - 1627 ER - TY - GEN A1 - Martienssen, Marion A1 - Schulze, R. A1 - Simon, J. T1 - Capacities and limits of three different technologies for the biological treatment of leachate from solid waste landfill sites Y1 - 1995 ER - TY - CHAP A1 - Martienssen, Marion A1 - Schulze, R. A1 - Heinke, M. A1 - Pohl, W. A1 - Simon, J. T1 - Leistungen und Leistungsgrenzen unterschiedlicher biotechnologischer Verfahren für die Behandlung von Deponiesickerwasser T2 - 11. Jahrestagung der Biotechnologen, Nürnberg, 24. bis 26. Mai 1993, Kurzfassungen Y1 - 1993 SP - 43 EP - 44 PB - DECHEMA CY - Frankfurt am Main ER - TY - GEN A1 - Steuer, Oliver A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Schulze, J. A1 - Maczko, H. A1 - Kudrawiec, Robert A1 - Fischer, Inga Anita A1 - Heller, R. A1 - Hübner, R. A1 - Khan, M. M. A1 - Georgiev, Yordan M. A1 - Zhou, Shengqiang A1 - Helm, M. A1 - Prucnal, Slawomir T1 - Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting T2 - Journal of Physics: Condensed Matter Y1 - 2022 U6 - https://doi.org/10.1088/1361-648X/aca3ea SN - 1361-648X VL - 35 IS - 5 ER - TY - GEN A1 - Wendav, Torsten A1 - Fischer, Inga Anita A1 - Virgilio, Michele A1 - Capellini, Giovanni A1 - Oliveira, F. A1 - Cerqueira, M. F. A1 - Benedetti, A. A1 - Chiussi, Stefano A1 - Zaumseil, Peter A1 - Schwartz, Bernhard A1 - Busch, Kurt A1 - Schulze, J. T1 - Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling T2 - Physical Review B 94 Y1 - 2016 U6 - https://doi.org/10.1103/PhysRevB.94.245304 VL - 94 IS - 24 SP - 245304 ER - TY - GEN A1 - Elogail, Yasmine A1 - Berkmann, Fritz A1 - Clausen, Caterina J. A1 - Fischer, Inga Anita A1 - Hänel, Linda A. A1 - Schwarz, Daniel A1 - Schulze, Jörg T1 - Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si T2 - Microelectronics Journal Y1 - 2022 U6 - https://doi.org/10.1016/j.mejo.2022.105404 SN - 1879-2391 VL - 123 ER - TY - GEN A1 - Schlykow, Viktoria A1 - Manganelli, Constanza Lucia A1 - Römer, Friedhard A1 - Clausen, Caterina J. A1 - Augel, Lion A1 - Schulze, Jörg A1 - Katzer, Jens A1 - Schubert, Michael Andreas A1 - Witzigmann, Bernd A1 - Schroeder, Thomas A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas T2 - Nanotechnology Y1 - 2020 U6 - https://doi.org/10.1088/1361-6528/ab91ef SN - 1361-6528 VL - 31 IS - 34 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Clausen, Caterina J. A1 - Schwarz, Daniel A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Virgilio, Michele A1 - da Silva Figueira, Maria Cecilia A1 - Birner, Stefan A1 - Koelling, Sebastian A1 - Koenraad, Paul M. A1 - Huang, Michael R. S. A1 - Koch, Christoph T. A1 - Wendav, Torsten A1 - Busch, Kurt A1 - Schulze, Jörg T1 - Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells T2 - Physical Review Materials Y1 - 2020 U6 - https://doi.org/10.1103/PhysRevMaterials.4.024601 SN - 2475-9953 VL - 4 IS - 2 ER - TY - GEN A1 - Schlipf, Jon A1 - Tetzner, Henriette A1 - Spirito, Davide A1 - Manganelli, Constanza Lucia A1 - Capellini, Giovanni A1 - Huang, Michael R. S. A1 - Koch, Christoph T. A1 - Clausen, Caterina J. A1 - Elsayed, Ahmed A1 - Schulze, Jörg A1 - Fischer, Inga Anita T1 - Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content T2 - Journal of Raman Spectroscopy Y1 - 2021 U6 - https://doi.org/10.1002/jrs.6098 SN - 1097-4555 ER - TY - GEN A1 - Steuer, O. A1 - Liedke, Maciej O. A1 - Butterling, M. A1 - Schwarz, D. A1 - Schulze, J. A1 - Li, Z. A1 - Wagner, A. A1 - Fischer, Inga Anita A1 - Hübner, R. A1 - Zhou, S. T1 - Evolution of point defects in pulsed-laser-melted Ge1-xSnx probed by positron annihilation lifetime spectroscopy T2 - Journal of Physics: Condensed Matter N2 - Direct-band-gap Germanium-Tin alloys (Ge1-xSnx) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge1-xSnx films treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening – variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge1-xSnx films exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters. KW - GeSn KW - laser annealing KW - positron annihilation KW - PLM KW - point defects Y1 - 2023 UR - https://iopscience.iop.org/article/10.1088/1361-648X/ad0a10/meta U6 - https://doi.org/10.1088/1361-648X/ad0a10 SN - 0953-8984 VL - 36 IS - 8 SP - 1 EP - 11 ER -