TY - GEN
A1 - Schwartz, Bernhard
A1 - Klossek, Andre
A1 - Kittler, Martin
A1 - Oehme, Michael
A1 - Kasper, Erich
A1 - Schulze, Jörg
T1 - Electroluminescence of Germanium-LEDs on Silicon
T2 - Physica Status Solidi C
Y1 - 2014
U6 - https://doi.org/10.1002/pssc.201400056
VL - 11
IS - 11-12
SP - 1686
EP - 1691
ER -
TY - CHAP
A1 - Arguirov, Tzanimir V.
A1 - Kittler, Martin
A1 - Oehme, Michael
A1 - Abrosimov, Nikolay V.
A1 - Vyvenko, Oleg F.
A1 - Kasper, Erich
A1 - Schulze, Jörg
T1 - Luminescence from Germanium and Germanium on Silicon
T2 - Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK
Y1 - 2014
U6 - https://doi.org/10.4028/www.scientific.net/SSP.205-206.383
SN - 1662-9779
SP - 383
EP - 393
PB - Trans Tech Publ.
CY - Durnten-Zurich [u.a.]
ER -
TY - GEN
A1 - Oehme, Michael
A1 - Kostecki, Konrad
A1 - Arguirov, Tzanimir V.
A1 - Mussler, Gregor
A1 - Ye, Kaiheng
A1 - Gollhofer, Martin
A1 - Schmid, Marc
A1 - Kaschel, Mathias
A1 - Körner, Roman
A1 - Kittler, Martin
A1 - Buca, Dan
A1 - Kasper, Erich
A1 - Schulze, Jörg
T1 - GeSn Heterojunction LEDs on Si Substrates
T2 - IEEE Photonics Technology Letters
Y1 - 2014
U6 - https://doi.org/10.1109/LPT.2013.2291571
SN - 1041-1135
VL - 26
IS - 2
SP - 187
EP - 189
ER -
TY - GEN
A1 - Oehme, Michael
A1 - Widmann, Daniel
A1 - Kostecki, Konrad
A1 - Zaumseil, Peter
A1 - Schwartz, Bernhard
A1 - Gollhofer, Martin
A1 - Körner, Roman
A1 - Bechler, Stefan
A1 - Kittler, Martin
A1 - Kasper, Erich
A1 - Schulze, Jörg
T1 - GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates
T2 - Optics Letters
Y1 - 2014
U6 - https://doi.org/10.1364/OL.39.004711
SN - 1539-4794
VL - 39
IS - 16
SP - 4711
EP - 4714
ER -
TY - GEN
A1 - Schwartz, Bernhard
A1 - Arguirov, Tzanimir V.
A1 - Kittler, Martin
A1 - Oehme, Michael
A1 - Kostecki, Konrad
A1 - Kasper, Erich
A1 - Schulze, Jörg
T1 - Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers
T2 - Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States
Y1 - 2015
U6 - https://doi.org/10.1117/12.2080816
PB - International Society for Optics and Photonics
ER -
TY - GEN
A1 - Schwartz, Bernhard
A1 - Oehme, Michael
A1 - Kostecki, Konrad
A1 - Widmann, Daniel
A1 - Gollhofer, Martin
A1 - Körner, Roman
A1 - Bechler, Stefan
A1 - Fischer, Inga Anita
A1 - Wendav, Torsten
A1 - Kasper, Erich
A1 - Schulze, Jörg
A1 - Kittler, Martin
T1 - Electroluminescence of GeSn/Ge MQW LEDs on Si substrate
T2 - Optics Letters
Y1 - 2015
U6 - https://doi.org/10.1364/OL40.003209
VL - 40
IS - 13
SP - 3209
EP - 3212
ER -
TY - GEN
A1 - Oehme, Michael
A1 - Gollhofer, Martin
A1 - Kostecki, Konrad
A1 - Körner, Roman
A1 - Bechler, Stefan
A1 - Widmann, Daniel
A1 - Aguirov, Tzanimir
A1 - Kittler, Martin
A1 - Schulze, Jörg
T1 - Ge and GeSn Light Emitters on Si
T2 - Solid State Phenomena
Y1 - 2016
U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.353
SN - 1012-0394
VL - 242
SP - 353
EP - 360
ER -
TY - GEN
A1 - Körner, Roman
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Augel, Lion
A1 - Bechler, Stefan
A1 - Hänel, Linda A.
A1 - Kern, Michael
A1 - Oehme, Michael
A1 - Rolseth, Erlend Granbo
A1 - Schwartz, Bernhard
A1 - Weißhaupt, David
A1 - Zhang, Wogong
A1 - Schulze, Jörg
T1 - The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Drect Zener Tunneling Monolithically Integrated on Si
T2 - 2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016
Y1 - 2016
SN - 978-1-5090-3901-2
SN - 978-1-5090-3902-9
SP - 22.5.1
EP - 22.5.4
PB - IEEE
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Schwartz, Bernhard
A1 - Oehme, Michael
A1 - Körner, Roman
A1 - Bechler, Stefan
A1 - Schulze, Jörg
A1 - Kittler, Martin
T1 - Luminescence of strained Ge on GeSn virtual substrate grown on Si (001)
T2 - Silicon Photonics XII, 30 January-1 February 2017, San Francisco, California, United States
Y1 - 2017
SN - 978-1-5106-0657-9
U6 - https://doi.org/10.1117/12.2249564
PB - SPIE
CY - Bellingham, Washington
ER -
TY - GEN
A1 - Boch, Steffen
A1 - Allan, Eric
A1 - Birkhofer, Klaus
A1 - Bossdorf, Oliver
A1 - Blüthgen, Nico
A1 - Christ-Breulmann, Sabina
A1 - Diekötter, Tim
A1 - Dormann, Carsten F.
A1 - Gossner, Martin M.
A1 - Hallmann, Christine
A1 - Hemp, Andreas
A1 - Hölzel, Norbert
A1 - Jung, Kirsten
A1 - Klaus, Valentin H.
A1 - Klein, Alexandra M.
A1 - Kleinebecker, Till
A1 - Lange, Markus
A1 - Müller, Jörg
A1 - Nacke, Heiko
A1 - Prati, Daniel
A1 - Renner, Swen C.
A1 - Rothenwöhrer, Christoph
A1 - Schall, Peter
A1 - Schulze, Ernst-Detlef
A1 - Socher, Stephanie A.
A1 - Tscharntke, Teja
A1 - Türke, Manfred
A1 - Weiner, Christiane N.
A1 - Weisser, Wolfgang W.
A1 - Westphal, Catrin
A1 - Wolters, Volkmar
A1 - Wubet, Tesfaye
A1 - Fischer, Markus
T1 - Extensive und jährlich wechselnde Nutzungsintensität fördert den Artenreichtum im Grünland
T2 - ANLIEGEN NATUR
Y1 - 2016
UR - https://www.biom.uni-freiburg.de/mitarbeiter/dormann/boch2016anliegennatur.pdf
SN - 1864-0729
VL - 38
IS - 1
SP - 86
EP - 95
ER -
TY - GEN
A1 - Schlipf, Jon
A1 - Martin, Elena
A1 - Stchakovsky, Michel
A1 - Benedetti, Alessandro
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
A1 - Chiussi, Stefano
T1 - Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy
T2 - Journal of Vacuum Science & Technology B
Y1 - 2019
U6 - https://doi.org/10.1116/1.5122777
SN - 2166-2754
VL - 37
IS - 6
ER -
TY - GEN
A1 - Funk, Hannes S.
A1 - Kern, Michael
A1 - Weisshaupt, David
A1 - Sürgers, Christoph
A1 - Fischer, Inga Anita
A1 - Oehme, Michael
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content
T2 - ECS Transactions
Y1 - 2019
U6 - https://doi.org/10.1149/09301.0101ecst
SN - 1938-5862
SN - 1938-6737
VL - 93
IS - 1
SP - 101
EP - 104
ER -
TY - GEN
A1 - Fischer, Inga Anita
A1 - Augel, Lion
A1 - Berkmann, Fritz
A1 - Kawaguchi, Yuma
A1 - Schlipf, Jon
A1 - Schulze, Jörg
T1 - Plasmonics-Integrated Ge PIN-Photodetectors
T2 - ECS Transactions
Y1 - 2019
U6 - https://doi.org/10.1149/09301.0041ecst
SN - 1938-5862
SN - 1938-6737
VL - 93
IS - 1
SP - 41
EP - 44
ER -
TY - GEN
A1 - Fischer, Inga Anita
A1 - Clausen, Caterina J.
A1 - Schwarz, Daniel
A1 - Zaumseil, Peter
A1 - Capellini, Giovanni
A1 - Virgilio, Michele
A1 - Da Silva Figueira, Maria Cecilia
A1 - Birner, Stefan
A1 - Koelling, Sebastian
A1 - Koenraad, Paul M.
A1 - Huang, Michael R. S.
A1 - Koch, Christoph T.
A1 - Wendav, Torsten
A1 - Busch, Kurt
A1 - Schulze, Jörg
T1 - Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells
T2 - Physical Review Materials
Y1 - 2020
U6 - https://doi.org/10.1103/PhysRevMaterials.4.024601
SN - 2475-9953
VL - 4
IS - 2
ER -
TY - GEN
A1 - Schlykow, Viktoria
A1 - Manganelli, Constanza Lucia
A1 - Römer, Friedhard
A1 - Clausen, Caterina J.
A1 - Augel, Lion
A1 - Schulze, Jörg
A1 - Katzer, Jens
A1 - Schubert, Michael Andreas
A1 - Witzigmann, Bernd
A1 - Schroeder, Thomas
A1 - Capellini, Giovanni
A1 - Fischer, Inga Anita
T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas
T2 - Nanotechnology
Y1 - 2020
U6 - https://doi.org/10.1088/1361-6528/ab91ef
SN - 1361-6528
VL - 31
IS - 34
ER -
TY - GEN
A1 - Augel, Lion
A1 - Fischer, Inga Anita
A1 - Gollhofer, Martin
A1 - Oehme, Michael
A1 - Schulze, Jörg
T1 - Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas
T2 - Journal of Applied Physics
Y1 - 2020
U6 - https://doi.org/10.1063/5.0012279
SN - 1089-7550
VL - 128
IS - 1
SP - 013105-1
EP - 013105-8
ER -
TY - RPRT
A1 - Mensing, Klaus
A1 - Anders, Ulrike
A1 - Fanelli-Falcke, Jörg
A1 - Hauschild, Arndt
A1 - Löwer, Markus
A1 - Mansfeld, Ulrike
A1 - Nußbaum, Jens
A1 - Ribbeck-Lampel, Juliane
A1 - Rohr, Götz von
A1 - Schulze, Juana
A1 - Sondermann, Martin
A1 - Wiellowics, Kathrin
T1 - Zukunft der (Stadt-)Zentren ohne Handel? Neue Impulse und Nutzungen für Zentren mit Zukunft
N2 - Wenn die Leitfunktion des Handels in den Zentren von Klein- und Mittelstädten sowie Stadtteilzentren größerer Städte abnimmt, steht die räumliche Planung in Bezug auf die (Weiter-)Entwicklung urbaner Zentren vor neuen Herausforderungen. Ausgehend von aktuellen Trends der Zentrenentwicklung werden Konsequenzen für alte und neue Nutzungen aufgezeigt und Handlungsempfehlungen entwickelt: Es bedarf Transformationsstrategien, die im Kern eine neue multifunktionale Nutzungsmischung durch Ansiedlung ergänzender, frequenzbringender Nutzungen neben dem Handel beinhalten, um lebendige und attraktive (Stadt-)Zentren zu erhalten. Die öffentlichen Räume als „gute Stube“ sind um nicht kommerzielle Aufenthaltsqualitäten aufzuwerten, um die Identifikation der Einwohnerinnen und Einwohner mit „ihrem“ Zentrum zu fördern. Die Zentrenentwicklung wird als eine Gemeinschaftsaufgabe gesehen, an der unter Federführung von Stadtpolitik und -verwaltung die verschiedenen Akteursgruppen aktiv mitwirken. Zudem werden Instrumente der Zentrentransformation vorgestellt, mit denen schnell, flexibel und situationsangepasst zukünftige Entwicklungen gestaltet werden können.
KW - Innenstadt
KW - Stadtteilzentren
KW - Handel
KW - Zentrenentwicklung
KW - Zentrentransformation
KW - Nutzungen
KW - Instrumente
Y1 - 2020
UR - https://www.econstor.eu/bitstream/10419/221915/1/1702653838.pdf
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Kern, Michal
A1 - Dettling, Marco M.
A1 - Schwarz, Daniel
A1 - Oehme, Michael
A1 - Sürgers, Christoph
A1 - Slageren, Joris van
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8% Sn
T2 - Journal of Physics: Condensed Matter
Y1 - 2021
U6 - https://doi.org/10.1088/1361-648X/abcb68
SN - 1361-648X
VL - 33
IS - 8
ER -
TY - GEN
A1 - Schlipf, Jon
A1 - Tetzner, Henriette
A1 - Spirito, Davide
A1 - Manganelli, Constanza Lucia
A1 - Capellini, Giovanni
A1 - Huang, Michael R. S.
A1 - Koch, Christoph T.
A1 - Clausen, Caterina J.
A1 - Elsayed, Ahmed
A1 - Schulze, Jörg
A1 - Fischer, Inga Anita
T1 - Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content
T2 - Journal of Raman Spectroscopy
Y1 - 2021
U6 - https://doi.org/10.1002/jrs.6098
SN - 1097-4555
ER -
TY - GEN
A1 - Augel, Lion
A1 - Schlipf, Jon
A1 - Bullert, Sergej
A1 - Bürzele, Sebastian
A1 - Schulze, Jörg
A1 - Fischer, Inga Anita
T1 - Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes
T2 - Scientific Reports
N2 - Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.
Y1 - 2021
U6 - https://doi.org/10.1038/s41598-021-85012-z
SN - 2045-2322
IS - 11
ER -
TY - GEN
A1 - Bergmann, Fritz
A1 - Ayasse, Markus
A1 - Schlipf, Jon
A1 - Mörz, Florian
A1 - Weißhaupt, David
A1 - Oehme, Michael
A1 - Prucnal, Slawomir
A1 - Kawaguchi, Yuma
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Plasmonic gratings from highly doped Ge1−ySny films on Si
T2 - Journal of Physics D: Applied Physics
Y1 - 2021
SN - 1361-6463
VL - 54
IS - 44
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Sürgers, Christoph
A1 - Fischer, Gerda
A1 - Oehme, Michael
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics
T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021
Y1 - 2021
SN - 978-1-6654-4761-4
U6 - https://doi.org/10.23919/MIPRO52101.2021.9596924.
SN - 978-953-233-101-1
SP - 45
EP - 49
PB - Piscataway
CY - IEEE
ER -
TY - GEN
A1 - Berkmann, Fritz
A1 - Ayasse, Markus
A1 - Mörz, Florian
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Titanium and Nickel as alternative materials for mid Infrared Plasmonic
T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021
Y1 - 2021
SN - 978-953-233-101-1
SN - 978-1-6654-4761-4
U6 - https://doi.org/10.23919/MIPRO52101.2021.9597155
SP - 36
EP - 39
PB - Piscataway
CY - IEEE
ER -
TY - GEN
A1 - Funk, Hannes S.
A1 - Kern, Michael
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Fischer, Inga Anita
A1 - Oehme, Michael
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers
T2 - Journal of Magnetism and Magnetic Materials
Y1 - 2022
U6 - https://doi.org/10.1016/j.jmmm.2021.168731.
SN - 0304-8853
VL - 546
ER -
TY - GEN
A1 - Elogail, Yasmine
A1 - Berkmann, Fritz
A1 - Clausen, Caterina J.
A1 - Fischer, Inga Anita
A1 - Hänel, Linda A.
A1 - Schwarz, Daniel
A1 - Schulze, Jörg
T1 - Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated
on Si
T2 - Microelectronics Journal
Y1 - 2022
U6 - https://doi.org/10.1016/j.mejo.2022.105404
SN - 1879-2391
VL - 123
ER -
TY - GEN
A1 - Xie, Yufang
A1 - Birowska, Magdalena
A1 - Funk, Hannes S.
A1 - Fischer, Inga Anita
A1 - Schwarz, Daniel
A1 - Schulze, Jörg
A1 - Zeng, Yu-Jia
A1 - Helm, Manfred
A1 - Zhou, Shengqiang
A1 - Prucnal, Slawomir
T1 - Tuning of Curie temperature in Mn5Ge3 films
T2 - Journal of Applied Physics
Y1 - 2022
U6 - https://doi.org/10.1063/5.0066717
SN - 1089-7550
VL - 131
SP - 105102-1
EP - 105102-8
ER -
TY - GEN
A1 - Berkmann, Fritz
A1 - Augel, Lion
A1 - Hack, Michael
A1 - Kawaguchi, Yuma
A1 - Weißhaupt, David
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Optimization of fully integrated Al nanohole array-based refractive index sensors for use with a LED light source Fritz Berkmann
T2 - IEEE Photonics Journal
KW - Sensors
KW - Refractive index
KW - Optical variables control
KW - Optical refraction
KW - Optical device fabrication
KW - Germanium
KW - Solid modeling
Y1 - 2022
UR - https://ieeexplore.ieee.org/document/9781306
U6 - https://doi.org/10.1109/JPHOT.2022.3177354
SN - 1943-0655
VL - 14
IS - 3
SP - 1
EP - 8
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Bloos, Dominik
A1 - Funk, Hannes Simon
A1 - Oehme, Michael
A1 - Fischer, Gerda
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - van Slageren, Joris
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
T2 - Semiconductor Science and Technology
N2 - Abstract
Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.
KW - two-dimensional hole gas
Y1 - 2024
U6 - https://doi.org/10.1088/1361-6641/ad8d06
SN - 0268-1242
VL - 39
IS - 12
SP - 1
EP - 10
PB - IOP Publishing
ER -
TY - GEN
A1 - Berkmann, Fritz
A1 - Steuer, Oliver
A1 - Ganss, Fabian
A1 - Prucnal, Slawomir
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx
T2 - Optical Materials Express
Y1 - 2023
U6 - https://doi.org/10.1364/OME.479637
SN - 2159-3930
VL - 13
IS - 3
SP - 752
EP - 763
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Oehme, Michael
A1 - Bloos, Dominik
A1 - Berkmann, Fritz
A1 - Seidel, Lukas
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - High mobility Ge 2DHG based MODFETs for low-temperature applications
T2 - Semiconductor Science and Technology
Y1 - 2023
U6 - https://doi.org/10.1088/1361-6641/acb22f
SN - 1361-6641
VL - 38
IS - 3
ER -