TY - GEN A1 - Augel, Lion A1 - Fischer, Inga Anita A1 - Gollhofer, Martin A1 - Oehme, Michael A1 - Schulze, Jörg T1 - Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas T2 - Journal of Applied Physics Y1 - 2020 U6 - https://doi.org/10.1063/5.0012279 SN - 1089-7550 VL - 128 IS - 1 SP - 013105-1 EP - 013105-8 ER - TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Kern, Michal A1 - Dettling, Marco M. A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Sürgers, Christoph A1 - Slageren, Joris van A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8% Sn T2 - Journal of Physics: Condensed Matter Y1 - 2021 U6 - https://doi.org/10.1088/1361-648X/abcb68 SN - 1361-648X VL - 33 IS - 8 ER - TY - GEN A1 - Bergmann, Fritz A1 - Ayasse, Markus A1 - Schlipf, Jon A1 - Mörz, Florian A1 - Weißhaupt, David A1 - Oehme, Michael A1 - Prucnal, Slawomir A1 - Kawaguchi, Yuma A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Plasmonic gratings from highly doped Ge1−ySny films on Si T2 - Journal of Physics D: Applied Physics Y1 - 2021 SN - 1361-6463 VL - 54 IS - 44 ER - TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Sürgers, Christoph A1 - Fischer, Gerda A1 - Oehme, Michael A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Slageren, Joris van A1 - Schulze, Jörg T1 - Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021 Y1 - 2021 SN - 978-1-6654-4761-4 U6 - https://doi.org/10.23919/MIPRO52101.2021.9596924. SN - 978-953-233-101-1 SP - 45 EP - 49 PB - Piscataway CY - IEEE ER - TY - GEN A1 - Funk, Hannes S. A1 - Kern, Michael A1 - Weißhaupt, David A1 - Sürgers, Christoph A1 - Fischer, Inga Anita A1 - Oehme, Michael A1 - Slageren, Joris van A1 - Schulze, Jörg T1 - Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers T2 - Journal of Magnetism and Magnetic Materials Y1 - 2022 U6 - https://doi.org/10.1016/j.jmmm.2021.168731. SN - 0304-8853 VL - 546 ER - TY - GEN A1 - Weißhaupt, David A1 - Sürgers, Christoph A1 - Bloos, Dominik A1 - Funk, Hannes Simon A1 - Oehme, Michael A1 - Fischer, Gerda A1 - Schubert, Markus Andreas A1 - Wenger, Christian A1 - van Slageren, Joris A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas T2 - Semiconductor Science and Technology N2 - Abstract Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG. KW - two-dimensional hole gas Y1 - 2024 U6 - https://doi.org/10.1088/1361-6641/ad8d06 SN - 0268-1242 VL - 39 IS - 12 SP - 1 EP - 10 PB - IOP Publishing ER - TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Oehme, Michael A1 - Bloos, Dominik A1 - Berkmann, Fritz A1 - Seidel, Lukas A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - High mobility Ge 2DHG based MODFETs for low-temperature applications T2 - Semiconductor Science and Technology Y1 - 2023 U6 - https://doi.org/10.1088/1361-6641/acb22f SN - 1361-6641 VL - 38 IS - 3 ER -