TY - GEN A1 - Rotta, Randolf A1 - Nolte, Jörg A1 - Nikolov, Vladimir A1 - Schubert, Lutz A1 - Bonfert, Stefan A1 - Wesner, Stefan T1 - MyThOS — Scalable OS Design for Extremely Parallel Applications T2 - 2016 Intl IEEE Conferences on Ubiquitous Intelligence Computing, Advanced and Trusted Computing, Scalable Computing and Communications, Cloud and Big Data Computing, Internet of People, and Smart World Congress, 18-21 July 2016 N2 - Many-core architectures trade single-thread performance for a larger number of cores. Scalable throughput can be attained only by a high degree of parallelism, minimized synchronization. Whilst this is achievable for many applications, the operating system still introduces bottlenecks through non-local sharing, synchronization,, message passing. A particular challenge for highly dynamic applications, for example invasive HPC applications, elastic compute clouds, is the management of short-living application threads, processes. This paper discusses OS architecture choices based on microkernel, multikernel, distributed systems designs, our development experience in the context of the MyThOS project. Initial experiments show a much faster thread creation, activation compared to monolithic systems like Linux while providing a more flexible protection, threading model that is better suited for dynamic scenarios. However, despite significant progress in the overall domain of operating systems, the design space for scalable many-core operating systems is yet to be fully explored. Y1 - 2016 SN - 978-1-5090-2771-2 U6 - https://doi.org/10.1109/UIC-ATC-ScalCom-CBDCom-IoP-SmartWorld.2016.0179 SP - 1165 EP - 1172 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Bär, Marcus A1 - Schubert, Björn-Arvid A1 - Marsen, Björn A1 - Wilks, Regan G. A1 - Pookpanratana, Sujitra A1 - Blum, Monika A1 - Krause, Stefan A1 - Unold, Thomas A1 - Yang, Wan Li A1 - Weinhardt, Lothar A1 - Heske, Clemens A1 - Schock, Hans-Werner T1 - Cliff-like conduction band offset and KCN-induced recombination barrier enhancement at the CdS/Cu2ZnSnS4 thin-film solar cell heterojunction N2 - The electronic structure of the CdS/Cu2ZnSnS4 (CZTS) heterojunction was investigated by direct and inverse photoemission. The effects of a KCN etch of the CZTS absorber prior to CdS deposition on the band alignment at the respective interface were studied. We find a “cliff”-like conduction band offset at the CdS/CZTS interface independent of absorber pretreatment and a significant etch-induced enhancement of the energetic barrier for charge carrier recombination across the CdS/CZTS interface. KW - kesterite KW - thin-film solar cells KW - energy band alignment Y1 - 2011 ER - TY - RPRT A1 - Knippschild, Robert A1 - Egermann, Markus A1 - Steinhäußer, Reimund A1 - Schubert, Stefan T1 - Untersuchungen zur effizienten räumlichen Entwicklung der Gewerbeflächen und einem dazugehörigen Flächennutzungsmanagement unter Einbeziehung von regional governance in der Region Halle/Leipzig.Endbericht. Leipzig und Dresden Y1 - 2011 ER - TY - GEN A1 - Bär, Marcus A1 - Schubert, Björn-Arvid A1 - Marsen, Björn A1 - Krause, Stefan A1 - Pookpanratana, Sujitra A1 - Unold, Thomas A1 - Weinhardt, Lothar A1 - Heske, Clemens A1 - Schock, Hans-Werner T1 - Impact of KCN etching on the chemical and electronic surface structure of Cu2ZnSnS4 thin-film solar cell absorbers N2 - The chemical and electronic surface structure of Cu2ZnSnS4 thin-film solar cell absorbers has been investigated by direct and inverse photoemission. Particular emphasis was placed on the impact of KCN etching, which significantly alters the surface composition and is best explained by a preferred etching of Cu and, to a lesser degree, Sn. As a consequence the surface band gap increased from (1.53 +/- 0.15) eV, which agrees with optically derived bulk band gap values, to (1.91 +/- 0.15) ev. KW - kesterite KW - thin-film solar cells KW - electronic surface structure Y1 - 2011 ER - TY - GEN A1 - Perez-Bosch Quesada, Emilio A1 - Rizzi, Tommaso A1 - Gupta, Aditya A1 - Mahadevaiah, Mamathamba Kalishettyhalli A1 - Schubert, Andreas A1 - Pechmann, Stefan A1 - Jia, Ruolan A1 - Uhlmann, Max A1 - Hagelauer, Amelie A1 - Wenger, Christian A1 - Perez, Eduardo T1 - Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing T2 - 14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023 N2 - This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications. Index Terms—radiation-hard, hardness-by-design, memristive devices, Enclosed Layout Transistor, in-memory computing KW - RRAM Y1 - 2023 SN - 979-8-3503-0240-0 U6 - https://doi.org/10.1109/CDE58627.2023.10339525 PB - Institute of Electrical and Electronics Engineers (IEEE) ER -